• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.179.2-179
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• 2003

• 대한화학회지
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• 제49권6호
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• pp.521-530
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• 2005

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 추계학술대회 논문집
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• pp.352-355
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• 2007

Polycrystalline materials such as steels(BCC) and aluminum alloys(FCC) show the strain hardening and the strain rate hardening during the plastic deformation. The strain hardening is induced by deformation resistance of dislocation glide on some crystallographic systems and increase of the dislocation density on grain boundaries or inner grain. However, the phenomenon of the strain rate hardening is not demonstrated distinctly. In this paper, tensile tests for various strain rates are performed in the rage of $10^{-2}$ to $10^2s^{-1}$ then, specimens are extracted on the same strain position to investigate the microscopic behavior of deformed materials. The extracted specimen is investigated by using the electron backscattered diffraction(EBSD) and transmission electron microscopy(TEM) results which contain grain size, grain shape, aspect ratio and dislocation substructure.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1190-1198
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• 2012

Three hydroquinone dimethyl ether derivatives have been synthesized and characterized by X-ray diffraction. The electron donating properties were evaluated by using UV-vis spectroscopy, cyclic voltammetry and by ESR spectroscopy. The microcrystalline cation-radical salts of the three donor molecules were also isolated by using antimony pentachloride, a single electron Lewis acid oxidant.

• 한국재료학회지
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• 제18권3호
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• pp.123-127
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• 2008

The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

• 한국광물학회지
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• 제4권1호
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• pp.51-55
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• 1991

산청 할로이사이트의 전자 회절분석 및 레플리카와 박편을 이용한 형태 연구결과 관산 할로이사이트는 반경이 서로 다른 몇 개의 관들이 중첩되어 있으며 내부의 작은 관은 원형이나 외부의 큰 관은 다각형으로서 두 관 사이에 삼각형의 공극이 형성되어 있음이 관찰되었다. 할로이사이트의 단면은 대체로 직경이 500${\AA}$보다 작으면 원형을 이루고 그보다 크면 다각형을 이룬다. 다각형의 단면을 갖는 할로이사이트의 전자 회절상은 이들이 이층 단사 구조를 갖고 있음을 지시한다.

• Applied Microscopy
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• 제52권
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• pp.2.1-2.6
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• 2022

With the lightening of the mobile devices, thinning of electrolytic copper foil, which is mainly used as an anode collection of lithium secondary batteries, is needed. As the copper foil becomes ultrathin, mechanical properties such as deterioration of elongation rate and tear phenomenon are occurring, which is closely related to microstructure. However, there is a problem that it is not easy to prepare and observe specimens in the analysis of the microstructure of ultrathin copper foil. In this study, electron backscatter diffraction (EBSD) specimens were fabricated using only mechanical polishing to analyze the microstructure of 8 ㎛ thick electrolytic copper foil in plane view. In addition, EBSD maps and transmission electron microscopy (TEM) images were compared and analyzed to find the optimal cleanup technique for properly correcting errors in EBSD maps.

• 열처리공학회지
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• 제24권3호
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• 열처리공학회지
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• 제36권4호
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• pp.193-197
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• 2023

Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In₂O₂ (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10^-3 Ω^-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10^-2 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.

• 열처리공학회지
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• 제29권3호
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.