• Title/Summary/Keyword: Electron beam inspection

검색결과 14건 처리시간 0.027초

Interval Scan Inspection Technique for Contact Failure of Advanced DRAM Process using Electron Beam-Inspection System

  • Oh, J.H.;Kwon, G.;Mun, D.Y.;Kim, D.J.;Han, I.K.;Yoo, H.W.;Jo, J.C.;Ominami, Y.;Ninomiya, T.;Nozoe, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권1호
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    • pp.34-40
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    • 2012
  • We have developed a highly sensitive inspection technique based on an electron beam inspection for detecting the contact failure of a poly-Si plugged layer. It was difficult to distinguish the contact failure from normal landing plugs with high impedance. Normally, the thermal annealing method has been used to decrease the impedance of poly-Si plugs and this method increases the difference of charged characteristics and voltage contrast. However, the additional process made the loss of time and broke down the device characteristics. Here, the interval scanning method without thermal annealing was effectively applied to enhance the difference of surface voltage between well-contacted poly-Si plugs and incomplete contact plugs. It is extremely useful to detect the contact failures of non-annealed plug contacts with high impedance.

Dose Effect of Phytosanitary Irradiation on the Postharvest Quality of Cut Flowers

  • Kwon, Song;Kwon, Hye Jin;Ryu, Ju Hyun;Kim, Yu Ri
    • 인간식물환경학회지
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    • 제23권2호
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    • pp.171-178
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    • 2020
  • The present study was conducted to determine the effects of electron beam irradiation on the postharvest quality of cut flowers. Cut flowers were irradiated with electron beam at 100, 200, 400, 600, 800, 1,000, and 2,000 Gy with a 10 MeV linear electron beam accelerator to evaluate their irradiation tolerance. Postharvest quality was determined by monitoring fresh weight loss, flower longevity, flower diameter, flowering rate, visual quality of flowers and leaves, and chlorophyll content. Cut flowers showed a radiation-induced damage with increasing the irradiation dose. Flower longevity and fresh weight of cut flowers decreased when the irradiation dose was increased. Flower bud opening was also inhibited in a dose-dependent manner. The effective irradiation doses for 10% reduction of postharvest quality (ED10) values were 144.4, 451.6, and 841.2 Gy in the 'Medusa' lily, 'Montezuma' carnation, and 'Rosina White' eustoma, respectively. Although tolerance of cut flowers to electron beam irradiation vary according to species, cultivars, or maturity stage conditions, it is conceivable that 'Montezuma' carnation and 'Rosina White' eustoma could be tolerated and maintained overall postharvest quality up to 400 Gy, the generic irradiation dose approved by the Animal and Plant Health Inspection Service (APHIS) and the International Plant Protection Convention (IPPC) for postharvest phytosanitary treatments.

Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

  • Chen, Hunglin;Fan, Rongwei;Lou, Hsiaochi;Kuo, Mingsheng;Huang, Yiping
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.402-409
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    • 2013
  • An innovative application of voltage-contrast (VC) inspection allowed inline detection of NMOS leakage in dense SRAM cells is presented. Cell sizes of SRAM are continual to do the shrinkage with bit density promotion as semiconductor technology advanced, but the resulting challenges include not only development of smaller-scale devices, but also intra-devices isolation. The NMOS leakage caused by the underneath n+/P-well shorted to the adjacent PMOS/N-well was inspected by the proposed electron-beam (e-beam) scan in which VC images were compared during the in-line process step of post contact tungsten (W) CMP (Chemical Mechanical Planarization) instead of end-of-line electrical test, which has a long response time. A series of experiments based on the mechanism for improving the intra-well isolation was performed and verified by the inline VC inspection. An optimal process-integration condition involved to the tradeoff between the implant dosage and photo CD was carried out.

TFT-LCD용 TFT기판에서 저에너지 전자빔을 이용한 전기적 결함 검출 메카니즘 분석 (Analysis of the Electrical Defect Detection Mechanism using a Low Energy Electron Beam on the TFT Substrate for TFT-LCDs)

  • 오태식;김호섭;김대욱;안승준;이건희
    • 한국산학기술학회논문지
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    • 제12권4호
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    • pp.1803-1811
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    • 2011
  • TFT-LCD용 TFT기판 상에서 저에너지 마이크로 컬럼을 이용하는 전기적인 결함 검출 메카니즘을 분석하였다. 본 연구에서는 고진공 챔버 내에서 7인치 TFT 기판에 저에너지 전자빔을 주사하여 여러 가지 불량 화소에 대한 SEM 이미지를 획득하였다. 더불어 각각의 불량 화소에서 나타나는 현상과 전기적인 거동과의 연관성을 분석하여 검출 메카니즘을 해석하였다. 그 결과로서 저에너지 초소형 전자 컬럼을 이용하는 저에너지 전자빔에 의한 SEM 이미지는 전자간 반발효과에 크게 영향을 받는 일관성 있는 결과를 확인하였다.

용접결함 검사용 수침식초음파탐상기의 매질개선연구 (A Study on Couplant Medium Improvement for Ultrasonic Inspection System with Water Immersion to Detect Weld Defects)

  • 정달우;최낙삼;박용배
    • 한국자동차공학회논문집
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    • 제16권5호
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    • pp.8-14
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    • 2008
  • For nondestructive inspection of electron beam (EB) welding part in automotive power transmission assembly, a pulse-echo ultrasonic testing apparatus in water immersion has been applied using the ultrasonic waves with a frequency of 10MHz. However various problems have appeared during the ultrasonic inspection, which led to some significant mistakes in automatic quality evaluation of the welding parts. Experimental study showed that the state of water couplant medium containing some amount of contaminants, rusts and anti-corrosion agents had considerable influences on the reduction of ultrasonic amplitudes during wave propagation. The amplitude reduction depending on the coupling medium state could bring about some mis-diagnoses for defects in the welding parts. The results proposed that for a reliable inspection of defects in welds the state of water medium should be kept in about 15 volume fractions (vol.%) of anti-corrosion agents and in minimized contaminants.

마이크로컬럼 어레이에 적용 가능한 웨이퍼단위의 수직 배선 방법 (Wafer level vertical interconnection method for microcolumn array)

  • 한창호;김현철;강문구;전국진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.793-796
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    • 2005
  • In this paper, we propose a method which can improve uniformity of a miniaturized electron beam array for inspection of very small pattern with high speed using vertical interconnection. This method enables the individual control of columns so that it can reduce the deviation of beam current, beam size, scan range and so on. The test device that used vertical interconnection method was fabricated by multiple wafer bonding and metal reflow. Two silicon and one glass wafers were bonded and metal interconnection by melting of electroplated AuSn was performed. The contact resistance was under $10{\Omega}$.

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전산역설계(Reverse Engineering) 기술을 이용한 편향코일(DY)의 설계 검증 연구 (Design Verification of the DY (Deflection Yoke) Using a CAI (Computer-Aided Inspection) Technique)

  • 윤정호;전형환;최광일;김용환;이관행
    • 한국CDE학회논문집
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    • 제3권1호
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    • pp.22-30
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    • 1998
  • The deflection yoke (DY) controls the direction of the electron beam that falls on the screen of the television monitor. Its quality depends on the shape and density of coils wound around the DY coil separator. Winding frames are used to make these coils, and therefore, their shapes are essential in making quality coils. A reverse engineering(RE) is applied to create the 3D model of the winding frame. It considerably shortens the design verification time and shows the level of accuracy that is feasible in the production mode. The paper explains each step of the reverse engineering process in detail.

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MCNP6 코드를 이용한 컨테이너 보안 검색용 전자 선형가속기 표적과 조준기에서 발생한 광중성자 특성에 관한 연구 (A Study on Photoneutron Characteristics Generated from Target and Collimator of Electron Linear Accelerator for Container Security Inspection using MCNP6 Code)

  • 이창호;김장오;이윤지;전찬희;이지은;민병인
    • 한국방사선학회논문지
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    • 제14권4호
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    • pp.455-465
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    • 2020
  • 본 연구 목적은 선형가속기 표적(Target) 및 조준기(Collimator)에서 발생한 광중성자 특성을 평가하는 것이다. 전산모사 설계는 첫째, 표적은 단일물질 표적과 복합물질 표적으로 구성하였다. 둘째, 조준기 종류에 따라 원뿔형(Cone beam) 조준기와 부채꼴(Fan beam) 조준기로 구성하였다. 셋째, 부채꼴 조준기의 물질을 납(Pb)으로만 구성된 단일물질과 텅스텐(W)과 납으로 구성된 복합물질 조준기로 구성하였다. 연구 방법은 표적으로부터 100 cm 거리에서 가상의 구(Sphere) 표면에서 F2 Tally를 이용하여 광중성자 발생률과 에너지 스펙트럼을 계산하였다. 그 결과 광중성자 발생률은 첫째, 표적에 따라서는 20% 차이가 발생하였다. 둘째, 조준기의 종류에 따라서는 10% 차이가 발생하였다. 셋째, 조준기 물질에 따라서는 40% 차이가 발생하였다. 광중성자 스펙트럼에서도 평균 광중성자 플럭스(Flux)가 광중성자 발생량과 유사한 경향으로 나타났다. 이러한 결과로 9 MeV 선형가속기 광중성자 발생은 표적보다는 조준기에 의해 광중성자 발생이 증가하며, 조준기의 종류보다는 물질에 영향을 더 크게 받는 것을 확인할 수 있었다. 광중성자 발생이 적은 표적 및 조준기를 선택하여 운영하는 것이 가장 적극적인 방사선 방호가 될 것이다. 따라서, 본 연구는 컨테이너 보안 검색용 선형가속기 도입 및 운영 그리고 방사선 방호에 유용한 자료가 될 수 있을 것으로 생각된다.

Image Enhancement of Simplified Ultrasonic CT Using Frequency Analysis Method

  • Kim, kyung-Cho;Hiroaki Fukuhara;Hisashi Yamawaki
    • Journal of Mechanical Science and Technology
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    • 제16권12호
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    • pp.1627-1632
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    • 2002
  • In this paper, a simplified ultrasonic CT system, which uses the information in three directions, that is, 90°, +45° and -45°about the inspection plane, is applied to the high strength steel, and the frequency analysis method for enhancing the C scan or CT image is developed. This frequency analysis method is based on the frequency response property of the material. By comparing the magnitudes in the frequency domain, the special frequency which shows a significant difference between the welded joint and base material was found and used to obtain a C scan or CT image. Experimental results for several kinds of specimens, having a welded joint by electron beam welding, a weld joint by arc welding, on a fatigue crack, showed that the obtained C scan or CT image has better resolution than the results of previous experiments using the maximum value of the received waveform.

정밀장비의 진동허용규제치에 미치는 인자에 관한 연구 (A Study on the Effected Factor for Vibration Criteria of Sensitive Equipment)

  • 이홍기;장강석;김두훈;김사수
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 1998년도 춘계학술대회논문집; 용평리조트 타워콘도, 21-22 May 1998
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    • pp.302-307
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    • 1998
  • In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of exactness and accuracy, because this is used as basic data for the design of building structure and structural dynamics of equipment. The study on the evaluation of the factors affecting the permissible vibration criteria is required to design the efficient isolation system of the semiconductor manufacturing of equipment. This paper deals with the properties of the effected factor for vibration criteria of high sensitive equipment.

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