• Smart Structures and Systems
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• 제24권4호
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• pp.435-446
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• 2019

The existing piezoelectric spherical transducers with fixed prescribed dynamic characteristics limit their application in scenarios with multi-frequency or frequency variation requirement. To address this issue, this work proposes an improved design of piezoelectric spherical transducers using the resistance tuning method. Two piezoceramic shells are the functional elements with one for actuation and the other for tuning through the variation of load resistance. The theoretical model of the proposed design is given based on our previous work. The effects of the resistance, the middle surface radius and the thickness of the epoxy adhesive layer on the dynamic characteristics of the transducer are explored by numerical analysis. The numerical results show that the multi-frequency characteristics of the transducer can be obtained by tuning the resistance, and its electromechanical coupling coefficient can be optimized by a matching resistance. The proposed design and derived theoretical solution are validated by comparing with the literature given special examples as well as an experimental study. The present study demonstrates the feasibility of using the proposed design to realize the multi-frequency characteristics, which is helpful to improve the performance of piezoelectric spherical transducers used in underwater acoustic detection, hydrophones, and the spherical smart aggregate (SSA) used in civil structural health monitoring, enhancing their operation at the multiple working frequencies to meet different application requirements.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.455-459
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• 2001

In this paper, the dielectric and pizoelectric properties of 0.05Pb(M $n_{04}$ $W_{0.2}$N $b_{0.4}$) $O_3$-0.95(PbZ $r_{x}$ $Ti_{1-x}$ ) $O_3$+yN $b_2$ $O_{5}$ , are investigated as a function of the mole ratio of Zr and the amount of N $b_2$ $O_{5}$ . Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient( $k_{p}$ ), relative dielectric constant ($\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ ), piezoelectric stain constrain ( $d_{33}$ and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ; $k_{p}$ =56.5%, $d_{33}$ =258pC/N, $\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ =1170, $Q_{m}$ =1150, tan$\delta$=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N $b_2$ $O_{5}$ is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35$0^{\circ}C$.TEX>.>.>.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.728-732
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• 2011

In this study, piezoelectric and dielectric properties of Lead-free $0.97[(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3]+0.03[(Bi_{0.5}K_{0.5})TiO_3]$ (abbreviated as 0.97NKNS-0.03BKT)ceramics synthesized by conventional solid-state reaction process were investigated as a function of $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition. The results indicated that the $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition significantly improved the sinterability, grain growth and piezoelctric properties of 0.97NKNS-0.03BKT ceramics. The optimum values as planar piezoelectric coupling coefficient ($k_p$= 0.355), piezoelectric constant ($d_{33}$= 207 pC/N) and mechanical quality factor ($Q_m$= 128) were obtained when 0.009KCT was added. The electromechanical coupling factor($k_p$) was slightly decreased according to the increasing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.112-112
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• 2009

In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• 한국세라믹학회지
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• 제38권11호
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• pp.980-986
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• 2001

5.2GHz 중심 주파수를 갖는 Bragg reflector형 FBAR를 제작하여 주파수 응답 특성을 측정하고, 공진기 구조에서 각 층의 탄성 손실(acoustic loss)을 고려한 주파수 응답의 수치적 계산을 통해서 그 특성을 분석하였다. W과 $SiO_2$쌍을 선택하여 RF sputtering법으로 총 9층의 Bragg reflector를 제작하였고, 공진기의 압전층으로 pulsed dc 전원에 의한 sputtering법으로 AlN과 Al 전극을 증착하여 제작하였다. 제작된 공진기의 반사손실( $S_{11}$)은 중심주파수 5.38GHz에서 12dB이었고 직렬 공진 주파수( $f_{s}$)는 5.376GHz, 병렬 공진 주파수 ( $f_{p}$)는 5.3865GHz로 관찰되었다. 공진기의 성능지수인 유효 전기기계결합계수( $K_{ef{f^2}}$)값이 약 0.48%, 품질계수 ( $Q_{s}$) 값이 411이었다. 수치적으로 계산된 주파수 응답 특성으로부터 AlN 박막의 acoustic 상수들과 Bragg reflector의 반사계수를 도출한 결과 AlN 박막의 material acoustic impedance와 wave velocity는 AlN 고유의 값보다 감소되었으며, AlN 박막의 전기기계 결합계수( $K^2$)값은 c축 배향성 저하에 의해 매우 작은 값(0.49%)을 가졌다. 주파수 대역에서 Bragg reflector의 반사계수는 약 0.99966으로 계산되었으며 약 2.5 GHz에서 9.5 GHz까지의 넓은 반사대역을 나타내었다.다.었다.

• 비파괴검사학회지
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• 제20권1호
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• pp.33-37
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• 2000

압전 세라믹 PZT와 고분자 매질인 에폭시 수지를 사용하여 PZT 체적비가 75%인 1-3 압전복합변환자를 dicing-filling 방법으로 제작하여 임피던스 분석과 펄스 반사법으로 수신된 초음파신호의 스펙트럼 분석을 통하여 전기 및 음향 특성을 조사하였다. 제작된 1-3 압전복합변환자의 경진동 모드 및 두께진동 모드의 기본진동수는 각각 0.95MHz와 1.63MHz이었고, 측면진동 모드는 관찰되지 않았다. 두께진동 모드에 대한 전기기계 결합계수는 PZT 단일상(0.52)보다 큰 0.54로 수신효율이 향상되었음을 알 수 있었다. 그리고 기계적 품질계수(Q)는 PZT 단일상(80)보다 상당히 작은 1.5이었고, 1-3 압전복합변환자의 축상 분해능이 크게 향상되었음을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.688-692
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• 2017

$Pb(Zr,\;Ti)O_3$ (PZT) is a piezoelectric material applied in a typical actuator and has been actively studied. However, in order to overcome the limitations of PZT, piezoelectric ceramics comprising mixed solid solutions of PZT with various relaxer electric materials have been studied. The $Pb(Zn_{1/3}Nb_{2/3})-Pb(Ni_{1/3}Nb_{2/3})-Pb(Zr,\;Ti)O_3$ (PZN-PNN-PZT) piezoelectric ceramic, known to have high piezoelectric constant and electromechanical coupling coefficient, was studied herein. The piezoelectric characteristics with various Zr contents (Zr/Ti ratios), PZN molar ratios, and sintering temperatures were compared. The piezoelectric properties of $d_{33}=580pC/N$ and $k_P=0.68$ were obtained with the $0.1PZN-0.2PNN-0.7PbZr_{0.46}Ti_{0.54}O_3$ composition sintered at $1,290^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.292-296
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• 2014

We investigated the effect of Ta doping on the dielectric and piezoelectric properties of lead-free $(K_{0.5}Na_{0.5})NbO_3$ ceramics prepared using a conventional ceramic processing. X-ray diffraction analysis revealed that Ta was perfectly substituted into Nb-sites in the range of 0 to 20 at%. As Ta content in the KNN increased, the sinterability of KNN ceramics was significantly degraded while the Ta doping enhanced the piezoelectric constant $d_{33}$, planar mode piezoelectric coupling coefficient ($k_p$), and electromechanical quality factor ($Q_m$). The highest values for $d_{33}$, $k_p$, and $Q_m$ was found to be 156 pC/N, 0.37, and 155, respectively.

• 한국산학기술학회논문지
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• 제12권1호
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• pp.390-395
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• 2011

본 연구에서는 고출력 압전 변압기에 적합한 압전 세라믹을 찾고자 그 조성으로 PZT계에 $Pb(Mn_{1/3}Nb_{2/3})O_3$와 $Pb(Sb_{1/2}Nb_{1/2})O_3$이 첨가된 3성분계 조성인 0.95Pb($Zr_xTi_{1-x}$)$O_3$+yPMN+(0.05-y)PSN으로 하였는데, 기계적 품질계수를 향상시킬 목적으로 PMN을 선정하였고, PSN은 유전율 및 전기기계 결합계수가 PMN으로 인해 저하되는 것을 방지 하고자 선정하였다. 이 3성분계 조성에서 최적의 성능을 가질 수 있는 MPB(Morphotropic Phase Boundary) 영역에서 유전 압전 및 전기적 특성을 정량적 정성적으로 검토하였다.