• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.115-119
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• 2015

This paper proposes a reconfigurable square-patch antenna with polarization diversity. The proposed antenna consists of a square radiating patch and a Y-shaped feed structure with two PIN diodes. The shape of the feed structure can be changed by adjusting the bias states of the two PIN diodes, which helps switch between two orthogonal linear polarizations. The polarization diversity characteristic is validated by the simulated current distribution and the measured radiation pattern.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.6
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• pp.435-443
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• 2017

In this study, we analyzed the effects of the common-gate transistor bias of a switching mode CMOS power amplifier. Although the most earier works occured on the transistor sizes of the cascode structure, we showed that the gate bias of the common-gate transistor also influences the overall efficiency of the power amplifier. To investigate the effect of the gate bias, we analyzed the DC power consumption according to the gate bias and hence the efficiency of the power amplifier. From the analyzed results, the optimized gate bias for the maximum efficiency is lower than the supply voltage of the power amplifier. We also found that an excessively low gate bias may degrade the output power and efficiency owing to the effects of the on-resistance of the cascode structure. To verify the analyzed results, we designed a 1.9 GHz switching mode power amplifier using $0.18{\mu}m$ RF CMOS technology. As predicted in the analysis, the maximum efficiency is obtained at 2.5 V, while the supply voltage of power amplifier is 3.3 V. The measured maximum efficiency is 31.5 % with an output power of 29.1 dBm. From the measureed results, we successfully verified the analysis.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.1089-1092
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• 1995

A planar vibratory gyroscope using electrostatic actuation and electromagnetic detection is proposed. The gyroscope has large sensitivity and can be fabricated by using surface micrimachining, bulk micromachining and conventional machining technology. In this paper, the gyroscope and the electromagnetic detecting system equations are derived to determine the output characteristics for the planar vibratory gyroscope using electrostatic acturation and electromagnetic detection. The maximum output is obtained when the driving frequencyequals to the detecting frequency. The resonant frequencies of the resonator are determined by the beam stiffness, i.e. the material constants and spring dimensions. The dimensions of the beams are determined using the analytic vibration modelling. The expected resonant frequencies are 200Hz both and the sensitivity is 62mV/deg/sec with 4000 electronic circuit amplifying coefficient for an AC drive voltage of 3V bias voltage of 15V and DC field current of 50 mA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.10
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• pp.766-772
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• 2018

A 6~10 GHz wide-band power amplifier was designed using an InGaAs enhancement-mode(E-mode) $0.15{\mu}m$ pseudomorphic high-electron-mobility transistor(pHEMT). The positive gate bias of the E-mode pHEMT device removes the need for complex negative voltage generation circuits, therefore reducing the module size. The wire bond and substrate loss parameters were modeled and extracted using a three-dimensional electromagnetic(3D EM) simulation. For wideband characteristics, lossy matching was adopted and the gate bias was optimized for maximum power and efficiency. The measured gain, in/output return loss, output power, and power-added efficiency were greater than 20 dB, 8 dB, 27 dBm, and 35 %, respectively, in the 6~10 GHz band.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.479-482
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• 2001

We have measured terahertz electromagnetic pulses when DC voltage from V up to 90V is applied to the transmitter chip excited by femto-second laser pulse. The femto-second excitation laser pulse was injected to transmitter chip. Finally, we are observed the amplitude of electromagnetic pulse and variation of spectrum. Consequently, the amplitude of spectrum was increased to high frequency according to increase of voltage. At that time, the signal-to-noise rate(SNR) is increased from 250:1 to 10, 000:1.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.560-566
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• 2004

In this paper, active frequency doubler with broadband characteristics from 6 ㎓ to 12 ㎓ was designed and fabricated using PHEMT. The designed frequency multiplier has a bias point near pinch-off and a proposed series RC circuit between bias line and input matching network far the improvement of stability. With 0 ㏈m input power, second harmonic of 1.7 ㏈m at 12 ㎓ -27.5 ㏈c suppression of 6 ㎓ fundamental, -18 ㏈c suppression of 18 ㎓ 3rd harmonic, and the 3 ㏈ output bandwidth of 1,8 ㎓ have been measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.593-596
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• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.94-99
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• 1997

There are several factors that have influence on the phase noise of an oscillator. But one of the major factors is the flicker noise of a transistor, since the phase noise of an oscillator is generated by mixing the carrier with the low frequency noise near the DC having the characteristic of 1/f. In this paper, we have presented a method on reducing the phase noise of an oscillator by using a low-frequency feedback circuit based on an active bias circuit, and have fabricated a DRO for a DBS receiver. Measurement results show that the phase noise is -92 dBc/Hz at the 10 KHz offset frequency, and from these results we have found out that the reduction method is very effective.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.345-350
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• 2005

An X-band push-push VCO for low cost applications is proposed. The designed push-push oscillator achieves a wide tuning range in the X-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning bandwidth of $900\;\cal{MHz}\;from\;10.9\;\cal{GHz}\;to\;11.8\;\cal{GHz}$ with a drain bias voltage varying from 4 to 9 V, excellent fudamental suppression of $-30\;\cal{dBc}$ and good phase noise of $-115\;\cal{dBc/Hz}\;@\;1\;\cal{MHz}$ offset.