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http://dx.doi.org/10.5515/KJKIEES.2018.29.10.766

Wide-Band 6~10 GHz InGaAs 0.15μm pHEMT 27 dBm Power Amplifier  

Ahn, Hyun-Jun (Department of Electronics Engineering, Kwangwoon University)
Sim, Sang-Hoon (RFcore Inc.)
Park, Myung-Cheol (RFcore Inc.)
Kim, Seung-Min (Department of Electronics Engineering, Kwangwoon University)
Park, Bok-Ju (RFcore Inc.)
Eo, Yun-Seong (Department of Electronics Engineering, Kwangwoon University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.29, no.10, 2018 , pp. 766-772 More about this Journal
Abstract
A 6~10 GHz wide-band power amplifier was designed using an InGaAs enhancement-mode(E-mode) $0.15{\mu}m$ pseudomorphic high-electron-mobility transistor(pHEMT). The positive gate bias of the E-mode pHEMT device removes the need for complex negative voltage generation circuits, therefore reducing the module size. The wire bond and substrate loss parameters were modeled and extracted using a three-dimensional electromagnetic(3D EM) simulation. For wideband characteristics, lossy matching was adopted and the gate bias was optimized for maximum power and efficiency. The measured gain, in/output return loss, output power, and power-added efficiency were greater than 20 dB, 8 dB, 27 dBm, and 35 %, respectively, in the 6~10 GHz band.
Keywords
GaAs E-Mode pHEMT; Wide-Band; Power Amplifer; Lossy Matching; EM-Simulation;
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