• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1122-1125
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• 2006

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.223-227
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• 2003

A new flexible electronic packaging technology and its medical applications are presented. Conventional silicon chips and electronic modules can be considered as "mechanically rigid box." which does not bend due to external forces. This mechanically rigid characteristic prohibits its applications to wearable systems or bio-implantable devices. Using current MEMS (Microelectromechanical Systems) technology. a surface micromachined flexible polysilicon sensor array and flexible electrode array fer neural interface were fabricated. A chemical thinning technique has been developed to realize flexible silicon chip. To combine these techniques will result in a realization of truly flexible sensing modules. which are suitable for many medical applications.

• Journal of the Korean Electrochemical Society
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• v.5 no.4
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• pp.216-220
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• 2002

The effects of electrolytes on electrochemical behavior from an oil thin layer interposed between a graphite electrode and an aqueous solution phase were examined. A hydrophobic electroactive species, tetrachloro-1,4-benzoquinone (TCQ), in a benzonitrile (EN) layer was employed to study ion transfer properties across the BN-water interface. Experimental results showed that hydrophobic cations as well as anions could be successfully used as ionic charge carriers. The addition of various salts into either the oil layers or the aqueous solutions offers deeper insight for the electrochemistry of the liquid thin layer system. When aqueous perchloric acid is interfaced with the BN films, the perchlorate ion of tetrahexylammonium perchlorate (THAP) substantially suppresses the dissociated proton concentration in the layer by the common ion effect while there is only a little change in the total acid concentration. Further approach by theoretical calculation makes it possible to quantitatively understand the effect of the electrolytes to the electrochemical responses of TCQ, which were previously reported (Anal. Chem. 73, 337 (2001)).

• Carbon letters
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• v.16 no.1
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• pp.51-56
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• 2015

Carbonate-type organic electrolytes were prepared using propylene carbonate (PC) and dimethyl carbonate (DMC) as a solvent, quaternary ammonium salts, and by adding different contents of 1-ethyl-3-methyl imidazolium tetrafluoroborate ($EMImBF_4$). Cyclic voltammetry and linear sweep voltammetry were performed to analyze conducting behaviors. The surface characterizations were analyzed by scanning electron microscopy method and X-ray photoelectron spectroscopy. From the experimental results, increasing the $EMImBF_4$ content increased the ionic conductivity and reduced bulk resistance and interfacial resistance. In particular, after adding 15 vol% $EMImBF_4$ in 0.2 M $SBPBF_4$ PC/DMC electrolyte, the organic electrolyte showed superior capacitance and interfacial resistance. However, when $EMImBF_4$ content exceeded 15 vol%, the capacitance was saturated and the voltage range decreased.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1200-1202
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• 1993

There are many methods to investigate the physical properties of monolayers formed at the air-water interface. Among them, the displacement current method is appropriate for the investigation of the dynamic behavior of monolayers. The measuring system of displacement current method was constructed at home-made Kuhn type LB deposition apparatus using aluminium plate electrode. The currents induced by the dynamic motion of molecules were measured when the molecules were pressed by barrier. To verify the measuring system, we used 4-octyl -4'-(5-carboxy-pentamethyleneoxy)-azobenzene molecules which has two remarkable variations of surface pressure of monolayer at the air-water interface. We can detect the two peaks of displacement currents which shows that the orientations of molecules are changed greatly at the state of these two remarkable changes of surface pressure.

• Bulletin of the Korean Chemical Society
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• v.20 no.8
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• pp.869-874
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• 1999

In this paper, electrochemical techniques are used to investigate hydrothermal-electrochemically formation of barium titanate (BT) ceramic films. For comparison, the electrochemical behaviors of anodic titanium oxide films formed in alkaline solution were also investigated both at room temperature and in hydrothermal condition at 150.0 ℃. Film structure and morphology were identified by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Titanium oxide films produced at different potentials exhibit different film morphology. The breakdown of titanium oxide films anodic growth on Ti electrode plays an important roles in the formation of BT films. BT films can grow on anodic oxide/metal substrate interface by short-circuit path, and the dissolution-precipitation processes on the ceramic film/solution interface control the film structure and morphology. Based upon the current experimental results and our previous work, extensively schematic proce-dures are proposed to model the mechanism of ceramic film formation by hydrothermal-electrochemical method.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.869-873
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• 1994

Electrical properties of each interfacial layers on semiconducting ceramics have been analized and evaluated by complex impedance resonance method as functions of ambient temperatures and applied voltages. From the analytical results, it can be observed that the interfacial layers in a semiconducting ceramics vary individually with the ambient temperature and then this influence the total properties. Also, it has been confirmed that the applied voltage on semiconducting ceramics affect mainly the electrode interface, and thus the resistance and capacitance decrease due to the variation of potential barrier layers.

• Ceramist
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• v.9 no.6
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• pp.24-29
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• 2006

Electron beam physical vapor deposition (EB-PVD) process has currently been applied to thermal barrier coatings (TBCs) for aircraft engines. Due to unique columnar structure, EB-PVD TBCs have advantages in resistances to thermal shock and thermal cycle for their applications, compared to films prepared by plasma spray By the EB-PVD equipment, we successfully obtained yttria-stabilized zirconia (YSZ) layer which has columnar and feather like structure including a large amount of nano size pores and gaps. The EB-PVD technique has been developed for coating functional perovskite type oxides such as (La, Sr)MnO3. Electrode properties have been improved by interface and structural control.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.