• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.4
• /
• pp.541-546
• /
• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.10
• /
• pp.938-942
• /
• 2008

Electrical and optical properties of semitransparent Ag and Al layer were studied, which are used for the electrodes in top-emission organic light-emitting diodes. Sheet resistance and transmittance of visible light through a thin layer were measured and analyzed. Several thin metal layers of Ag and Al were deposited onto a glass substrate up to a thickness of 50 nm using a thermal evaporation. Sheet resistance measurements show that a layer thickness is needed more than 15 nm and 20 nm for Ag and Al, respectively, when a proper sheet resistance is assumed to be less than $50{\Omega}/sq$. From the measurements of transmittance of visible light through a thin-metal layer, metallic behavior was observed when the layer thickness is over 25 nm for both films. Thus, from a study of sheet resistance and transmittance of visible light, a minimum proper thickness of semitransparent metal layer is 20 nm and 25 nm for Ag and Al, respectively.

• Proceedings of the IEEK Conference
• /
• 2002.07b
• /
• pp.1125-1128
• /
• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.309-309
• /
• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• Korean Journal of Crystallography
• /
• v.14 no.2
• /
• pp.105-109
• /
• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.273-276
• /
• 1996

Polyphenylenediamine(PPD) film was prepared with dimethylsulfoxide after the synthesis of PPD by chemical polymerization. The molecular structure of conductive polymer synthesized were discussed by using SEM, FT-IR, NMR. The electrical conductivity measurements were carried out at room temperature. The electrical conductivity which was obtained from electrical instrument was 1.98${\times}$10$\^$-2/ S/cm at ambient temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.3-4
• /
• 2005

The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.31-34
• /
• 2012

The addition of nano/micro silica into unsaturated polyester resin (UPR) results in the improvement of the electrical properties of Silica-UPR composites. The surface, volume resistivity, dielectric strength, dissipation factor and dry arc resistivity of nano silica-UPR composites were found to improve significantly. The effects of the nano and micro fillers in UPR have been evaluated. They are presented in this paper. To evaluate the electrical properties of the nano & micro composites, all the measurements were done as per the prescribed methods in ASTM. It was observed that the addition of nano silica improves the electrical properties as compared to micro silica. The better dispersion of silica particles in unsaturated polyester resin enhances the electrical properties of silica-UPR composites.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.6
• /
• pp.231-236
• /
• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.12
• /
• pp.1075-1079
• /
• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.