Analysis of Electrical Properties of Polyoxide Grown on Prosphorous-doped Polysilicon

건식 산화법에 의한 인 도핑 다결정 산화막의 전기적 특성 분석

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.