• Journal of the Korean Electrochemical Society
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• v.22 no.3
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• pp.112-121
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• 2019

In this study, silicon / carbon nanotube / carbon composite particles with high capacity were fabricated by using micro-sized silicon particles and carbon nanotubes as an anode material for lithium ion batteries. The silicon / carbon nanotube / carbon composite particles were prepared by spray drying method to prepare spherical composite particles. The composite particles have the network structure of the carbon nanotubes around the silicon particles, in which the silicon particles and the carbon nanotubes are bonded by amorphous carbon. It appears that the volume expansion of silicon is effectively buffered and the electrical contact is maintained in the network structure of the composite particles during charge-discharge cycles.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.881-887
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• 2014

Micro-sized Peltier coolers are generally employed for uniformly distributing heat generated in the multi-chip packages. These coolers are commonly classified into vertical and planar devices, depending on the heat flow direction and the arrangement of thermoelectric materials on the used substrate. Owing to the strong need for evaluation of performance of thermoelectric modules, at present an establishment of proper theoretical model has been highly required. The design theory for micro-sized thermoelectric cooler should be considered with contact resistance. Cooling performance of these modules was significantly affected by their contact resistance such as electrical and thermal junction. In this paper, we introduce the useful and optimal design model of small dimension thermoelectric module.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.231.1-231.1
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• 2015

Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

• Journal of Ocean Engineering and Technology
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• v.16 no.6
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• pp.60-64
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• 2002

This paper describes the machining characteristics of the MoSi$_2$--based composites through the process of electric discharge drilling with various tubular electrodes. In addition to hardness characteristics, microstructures of Nb/MoSi$_2$laminate composites were evaluated from the variation of fabricating conditions, such as preparation temperature, applied pressure, and pressure holding time. MoSi$_2$-based composites have been developed in new materials for jet engines of supersonic-speed airplanes and gas turbines for high-temperature generators. These high performance engines may require new hard materials with high strength and high temperature-resistance. Also, with the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material. The tool electrode is almost -unloaded, because there is n direct contact between the tool electrode and the work piece. By combining a non-conducting ceramic with more conducting ceramic, it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and MoSi$_2$ powder was an excellent strategy to improve hardness characteristics of monolithic MoSi$_2$. However, interfacial reaction products, like (Nb, Mo)SiO$_2$and Nb$_2$Si$_3$formed at the interface of Nb/MoSi$_2$, and increased with fabricating temperature. MoSi$_2$composites, with which a hole drilling was not possible through the conventional machining process, enhanced the capacity of ED-drilling by adding MbSi$_2$, relative to that of SiC or ZrO$_2$reinforcements.

• Journal of the Korean Society for Railway
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• v.18 no.5
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• pp.410-418
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• 2015

A slider of the pantograph undergoes uneven and abnormal wear due to sliding contact with the catenary. In the case of rain, the loss of lubricant increases the frictional resistance for the reciprocating motion between the catenary and the slider, accelerating local wear. The slider in the winter should have good wear resistance, which can be achieved through alloy design. Uneven and abnormal wear were not observed in the results of a driving test using a wear resistant slider. It was found that the increased density of the slider enhanced the corrosive effects of Fe-Ti, preventing the occurrence of abnormal wear by maintaining the wear and arc resistance in the rainy season. Also, mechanical and electrical wear did not affect the composition of the slider, and this improved the wear resistance. Inaddition, the slider was applied to an entire train and was tested during driving; ananalysis of the correlation of the catenary was performed, including during the rainy season and the winter season.

• Korean Chemical Engineering Research
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• v.56 no.1
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• pp.139-142
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• 2018

Silicon (Si) is a promising anode material for next-generation lithium ion batteries (LIBs) because of its high capacity of 4,200 mAh/g ($Li_{4.4}Si$ phase). However, the large volume expansion of Si during lithiation leads to electrical failure of electrode and rapid capacity decrease. Generally, a binder is homogeneously mixed with active materials to maintain electrical contact, so that Si needs a particular binding system due to its large volume expansion. Polyvinyl alcohol (PVA) is known to form a hydrogen bond with partially hydrolyzed silicon oxide layer on Si nanoparticles. However, the decrease of its cohesiveness followed by the repeated volume change of Si still remains unsolved. To overcome this problem, we have introduced the electrospinning method to weave active materials in a stable nanofibrous PVA structure, where stresses from the large volume change of Si can be contained. We have confirmed that the capacity retention of Si-based LIBs using electrospun PVA matrix is higher compared to the conservative method (only dissolving in the slurry); the $25^{th}$ cycle capacity retention ratio based on the $2^{nd}$ cycle was 37% for the electrode with electrospun PVA matrix, compared to 27% and 8% for the electrodes with PVdF and PVA binders.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.125-128
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• 2017

This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.

• Tribology and Lubricants
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• v.38 no.3
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• pp.93-100
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• 2022

Micro-light emitting diode (micro-LED) displays offer numerous advantages such as high brightness, fast response, and low power consumption. Hence, they are spotlighted as the next-generation display. However, defective LEDs may be created due to non-uniform contact loads or LED alignment errors. Therefore, a repair process involving the replacement of defective LEDs with favorable ones is necessitated. The general repair process involves the removal of defective micro-LEDs, interconnection material transfer, as well as new micro-LED transfer and bonding. However, micro-LEDs are difficult to repair since their size decreases to a few tens of micron in width and less than 10 ㎛ in thickness. The conventional nozzle-type dispenser for fluxes and the conventional vacuum chuck for LEDs are not applicable to the micro-LED repair process. In this study, transfer conditions are determined using a micro stamp for repairing micro-LEDs. Results show that the aging time should be set to within 60 min, based on measuring the aging time of the flux. Additionally, the micro-LEDs are subjected to a compression test, and the result shows that they should be transferred under 18.4 MPa. Finally, the I-V curves of micro-LEDs processed by the laser and hot plate reflows are measured to compare the electrical properties of the micro-LEDs based on the reflow methods. It was confirmed that the micro-LEDs processed by the laser reflow show similar electrical performance with that processed by the hot plate reflow. The results can provide guidance for the repair of micro-LEDs using micro stamps.