• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.56-56
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• 2008

ZnO Oxide TFT with organic dielectric was prepared. ZnO thin film as active channel was prepared by plasma enhanced atomic deposition technique. Organic dielectric was spin coated on the gate metal. The structure of prepared TFT is bottom gate type and top contact structure. The characterization of oxide TFT was performed. We obtained the mobility of $0.7cm^2$/Vs, the threshold voltage of -14V, and the on-off ratio of $10^4$. We also obtained good output characterization with solid saturation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.28-31
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• 1994

We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.14-17
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• 2005

The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1061-1067
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• 2004

In this study, ferroelectric (Ba,Sr)TiO$_3$ and high temperature superconductor YBCO thin films were fabricated by PLD (Pulsed Laser Deposition) method and tuneable bandstop filters were implemented with two different IDC(Interdigital Capacitance) gap patterns, 20${\mu}{\textrm}{m}$ and 30${\mu}{\textrm}{m}$ using these two thin film layers. The resonant frequency was changed by DC bias voltage. By comparing measured results with simulation, the dielectric properties of ferroelectric thin film have been extracted. The permittivity was 820 ～ 900 at 30 K and had an acceptable error range but the loss tangent had a great difference, 0.018 in 30${\mu}{\textrm}{m}$ IDC gap pattern and 0.037 in 20 ${\mu}{\textrm}{m}$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.565-566
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• 2006

In this work, We study electrical characterization of $HfO_2$/Hf/Si films grown by Atomic Layer Deposition(ALD). Through AES(Auger Electron Spectroscopy), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf metal layer in our structure effectively suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.314-318
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• 2003

This paper describes the construction, measurement, and characterization of an instrument for the distribution of luminous flux. This is done by measuring the flux around a light source while a detector and a source is rotating, and integrating it over an entire imaginary surface surrounding the source. We make a gonio radiometer to realize the scales of total luminous flux and geometrically integrate to get total spectral flux from standards of irradiance and illuminance. The uncertainties of a total flux in the gonioradiometry are 1.3%, and 0.4% below the standard lamps of NIST and NIM for each other.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.116-122
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• 2004

A micromachined self-exited piezoelectric cantilever has been fabricated using PZT(52/48) thin film. For the application to biosensor using antigen-antibody interaction, electromechanical properties such as resonant frequency and quality factor of micromachined piezoelectric cantilever were important factors. Electromechanical properties and resonant behaviors of microfabricated cantilever were simulated by FEA (Finite Element Analysis) using Coventorware$^{TM}$2003. And these characterization of microcantilever were measured by using LDV(Laser Doppler Vibrometer) to compare with FEA data. We present the resonant frequency shift of micromachined piezoelectric cantilevers due to combination of mass loading and change of spring constant by gold deposition. Experimental mass sensitivities of microcantilever were characterized by Au deposition on the backside of microcantilever. Mass sensitivities with $100{\times}300$ ${\mu}{\textrm}{m}$ dimension cantilever from simulation and experimental were 5.56 Hz/ng and 16.8 Hz/ng respectively.y.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.437-438
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• 2007

A Iridium complexes has been synthesised from the reaction of [$lr(ppy)_2Cl_2$] with 5-bromo-2.2'-bipyridine, 5-Ethynyl-2.2'-bipyridine Characterization of the complexes were by FT-IR, $^1H(^{13}C)$-NMR and photo-, electro-chemistry properties were showed by UV-vis, Cyclicvoltammetry, Photoluminescence.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.57-57
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.154-154
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• 1997