• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.340-344
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• 2012

Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.146-150
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• 2015

Insulation breakdown voltage and insulation lifetime were investigated in straight lines or twisted pairs with polyesterimide-polyamideimide enameled round wires (EI/AIW ). The enamel thickness was 50 μm and the conducting copper radius was 0.50, 0.75, 1.09, and 1.50 mm, respectively. There were many air gaps in a twisted pair therefore, when voltage was applied to the twisted pair, enamel erosion took place in the air gap area because of partial discharge according to Paschen's law. Insulation breakdown voltage and insulation lifetime were highest in the sample of 0.75 mm conductor radius, which was higher than those values for 0.50 mm or 1.09 and 1.55 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.101-102
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• 2005

SiC lateral power semiconductor device has high breakdown voltage and low on-state voltage drop due to the material characteristics. And, because the high breakdown voltage can be obtained, RESURF technique is mostly used in silicon power semiconductor devices. In this paper, we presents the electrical characteristics of the 4H-SiC RESURF LDMOSFET as a function of the epi-layer length, concentration and thickness. 240~780V of breakdown voltage can be obtained as a function of epi-layer length and thickness with same epi-layer concentration.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.67-73
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• 2003

The algorithm (or calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is Proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data and the base-collector breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.490-495
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• 1995

A bipolar junction transistor which exihibits 1000V breakdown voltage is designed and fabricated using FLR (Field Limiting Rings). Three dimensional effects on the breakdown voltage is investigated in the cylindrical coordinate and the simulation results are compared with the results in the rectangular coordinate. Breakdown voltage of the device with 3 FLR is simulated to be 1420V in the cylindrical coordinate while it is 1580V in rectangular coordinate. Bipolar junction transistor has been fabricated using the epitaxial wafer of which resistivity is 86 .OMEGA.cm and thickness is 105 .mu.m. Si$_{3}$N$_{4}$ and glass are employed for the passivation. Breakdown of the fabricated device is measured to be 1442V which shows better greement with the simulation results in cylindrical coordination.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.301-306
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• 2014

Recently in accordance with the rapid development of the industrial society, the accidents caused by dielectric breakdown have been increasing in power grid. It is important to prevent the dielectric breakdown of a high voltage apparatus to reduce the damage from electrical hazards. To establish an electrically reliable database of insulation design criteria for high voltage apparatus, a study on dielectric characteristics test is indispensable. In this study, dielectric characteristics according to field utilization factors (${\xi}$) which are represented as the ratio of mean electric field to maximum electric field are investigated. the dielectric breakdown experiments by using several kinds of electrode systems made with stainless steel are performed by AC breakdown voltage under air-insulation. Also, the experimental results are analyzed by the Weibull distribution. As a result, it is found that the dielectric characteristics of air-insulation are determined by ${\xi}$ as well as arrangement of electrode systems. It is considered that the results of this study would be applicable to designing the air-insulated high voltage apparatuses.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.605-608
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• 1993

Breakdown characteristics of a small rod-to-rod microairgap has been studied for obtain an optimum breakdown voltage and an airgap spacing to be used as an emission control means by the electrical arc-burning unburnt carbon particulates exhausted from a power station burner. It is found that the breakdown voltage at the rod-to-rod airgap spacing in the rang of $1{\sim}100{\mu}m$ decreased with decrease in the rod-to-rod airgap spacing. And there were no minimum breakdown voltage on a $V_b$-Pd characteristics which is known as the minimum voltage in Paschen's law in air atmosphere. Breakdown voltages of the airgap at the constant airgap spacing were $V_{b-dc}>V_{b-ac}>V_{b-pulse}$, and it was lowest for the pulse voltage applied. As a result, it is found that a pulse power was one of effective power compared with dc or ac to be used as such an unburnt carbon particulate emission control means and the airgap spacing became to several tens ${\mu}m$, then the breakdown voltages were down to several handreds voltages.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.278-282
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• 2007

In the complex insulation system that is used in extra high voltage(EHV) devices, according to the trend for electric power equipment of high capacity and reduction of its size, macro interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. In this paper, the dielectric strength decrease of the macro interfaces between epoxy and ethylene propylene diene terpolymer(EPDM) was estimated by using the applied voltage to breakdown time characteristics. Firstly, the AC short time dielectric strength of specimens was measured at room temperature. Then, the breakdown time was measured under the applied constant voltage which is 70% of short time breakdown voltage. With these processes, the life exponent n was determined by inverse power law, and the long time breakdown voltage can be evaluated. The best condition of the interface was LOS(low viscosity(350 cSt) silicone oil spread specimen). When 30 years last on the specimens, the breakdown voltage was estimated 44% of the short time breakdown voltage.