• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.685-689
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• 2005

In the fabrication and design of MLCCs (Multilayer Ceramic Capacitors) with Ni inner electrode for medium and high voltage, reliability and dielectric breakdown mode have been investigated. For thickness of green sheet, the relationship between the rated voltage versus the thickness of green sheet. Increasing the thickness of green sheet increases the dielectric breakdown voltage. However, a practical limit to this linear relationship occurs at 30 urn and above. As the thickness of green sheet increased, dielectric breakdown voltage and weibull coefficient is increased, but abruptly decrease at 30 urn and 36 urn. When 24 urn of green sheet thickness, weibull coefficient and dielectric breakdown voltage were 13.58 and 70 V/um respectively. The results enabling the MLCCs to demonstrate high levels of reliability at medium and high voltage.

• 공업화학
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• 제21권2호
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• pp.205-210
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• 2010

본 연구에서는 기체방전관의 과전압 보호 성능과 수명에 미치는 절연파괴 특성을 알아보기 위하여 황동전극을 이용하여 기체방전관을 제조하였다. 황동전극을 이용한 기체방전관의 절연파괴 특성은 인가전압의 기울기와 방전관 내부의 질소기체 압력을 통하여 알아보았다. 방전관 인가전압의 기울기가 증가할수록 절연파괴 전압과 방전 시 소비되는 에너지량이 크게 상승되었고, 절연파괴 시간은 감소되었다. 방전관 내부 질소기체의 압력이 감소할수록 절연파괴 전압과 절연파괴 소요시간, 방전 소비에너지량이 크게 감소되었다. 결과적으로, 방전관의 과전압 보호 성능 및 수명을 증진시키기 위해서는 절연파괴 전압과 절연파괴 소요시간, 방전 시 소비되는 에너지량이 감소되어야 함을 알 수 있었다. 한편, 방전관 내부 질소기체 압력이 방전관의 자체 수명 및 과전압 보호 성능에 영향을 미침을 알 수 있었다.

• 한국초전도ㆍ저온공학회논문지
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• 제8권2호
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• pp.37-42
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• 2006

A research on several characteristics such as volume breakdown and surface discharge of insulators for a termination of power transmission class HTS cable was performed. We investigated the surface discharge of glass fiber reinforced plastic (GFRP) under air, cryogenic nitrogen gas and nitrogen gas media. The breakdown characteristics of these media were studied. Experimental results revealed that flashover voltage greatly depends on pressure, temperature, the kinds of insulating media and voltages, but it is slightly affected by shape and material of electrode. The breakdown voltage of liquid nitrogen, cryogenic nitrogen gas and nitrogen gas deeply depends on the shape and dimension of electrode, kinds of voltages and pressure. Moreover, the breakdown voltage of cryogenic nitrogen gas and flashover voltage of GFRP in the cryogenic nitrogen gas is also influenced by temperature and vapour-mist density of the gas.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.607-611
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• 2000

The characteristics on the interface between Epoxy and EPDM which are materials of the underground insulation systems of power delivery have studied. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long breakdown life time can be evaluated. AC breakdown strength and life time is improved by oiling to the interface. When the low viscosity oil is spread interface has the highest life time.

• 전기학회논문지
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• 제57권2호
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• pp.245-251
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• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field was performed. The experiments were carried out under AC voltage and standard lightning impulse(SLI) voltage. Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltages and standard lighting impulse voltage was applied in a needle-plane. The needle-plane electrode whose gap distance was 3 mm were used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field may be influenced by defects like needle-shaped protrusions. In case of slowly rising SLI voltage and AC voltage it is enhanced by corona-stabilization. This phenomena caused by the ion drift during streamer development and the resulting space-charge is investigated. In non-uniform field under negative SLI voltage the breakdown voltage was increase linearly but under positive SLI voltage the breakdown voltage increase non-linearly. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at AC voltage. $SF_6/CF_4$ mixture has good dielectric strength and arc-extinguishing properties than pure SF6. This paper presents experimental results on breakdown characteristics for various mixtures of $SF_6/CF_4$ at practical pressures. We could make an environment friendly gas insulation material with maintaining dielectric strength by combing $SF_6\;and\;CF_4$ which generates a lower lever of the global warming effect.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• 전기학회논문지
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• 제62권9호
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• pp.1255-1259
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• 2013

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1663-1672
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• 2018

In recent times, gas insulated medium voltage (MV) circuit breakers (CB) form a vital component in power system network, considering its advantages such as reduced size and safety margins. Gas insulation characteristics of circuit breakers are generally measured by lightning impulse (LI) test according to IEC standard 60060-1 as a factory routine test. Considering the environmental issues of $SF_6$ gas, many research works are being carried out towards the mixture of $SF_6$ gases for high voltage insulation applications. However, few reports are only available regarding the LI withstand and streamer propagation characteristics (at both positive and negative polarity of waveform) of $SF_6/N_2$ gas mixture insulated medium voltage circuit breakers. In this paper, positive and negative polarity LI tests are carried out on 22 kV medium voltage circuit breaker filled with $SF_6/N_2$ gas mixture at different gas pressures (1-5 bar) and at different gas mixture ratios. Important LI parameters such as breakdown voltage, streamer velocity, time to breakdown and acceleration voltage are evaluated with IEC standard LI ($1.2/50{\mu}s$) waveform. Weibull distribution analysis of LI breakdown voltage data is carried out and 50% probability breakdown voltage, scale parameter and shape parameter are evaluated. Results illustrate that the $25%SF_6+75%N_2$ gas filled insulation considerably enhances the LI withstand and breakdown strength of MV circuit breakers. LI breakdown voltage of circuit breaker under negative polarity shows higher value when compared with positive polarity. Results show that maintaining the gas pressure at 0.3 MPa (3 bar) with 10% $SF_6$ gas mixed with 90% $N_2$ will give optimum lighting impulse withstand performance of 22 kV MV circuit breaker.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1618-1620
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• 1997

A GaAs schottky diode with taper field plate is proposed to increase breakdown voltage. Breakdown voltage is calculated by device simulator MEDICI. The GaAs schottky diode with taper gate which has $5.7^{\circ}$ taper angle have shown 45% increase in the breakdown voltage compared with conventional field plate GaAs schottky diode.