Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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GaAs Schottky Diode with Taper Field Plate

경사진 Field Plate 구조 GaAs 쇼트키 다이오드

  • 김성룡 (아주대학교 전기전자공학부) ;
  • 양희윤 (아주대학교 전기전자공학부) ;
  • 최연익 (아주대학교 전기전자공학부)
  • Published : 1997.07.21
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Abstract

A GaAs schottky diode with taper field plate is proposed to increase breakdown voltage. Breakdown voltage is calculated by device simulator MEDICI. The GaAs schottky diode with taper gate which has $5.7^{\circ}$ taper angle have shown 45% increase in the breakdown voltage compared with conventional field plate GaAs schottky diode.

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