• Title/Summary/Keyword: Electrical bonding

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Investigation on the Spot for Grounding Systems in Buildings

  • Gil, Hyoung-Jun;Kim, Dong-Woo;Kim, Dong-Ook;Kim, Hyang-Kon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.3
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    • pp.39-45
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    • 2010
  • This paper deals with investigation on the spot for grounding systems of buildings based on international standards at construction sites. The investigation was carried out for grounding method, grounding type, shape of grounding electrode, grounding for a lightning protection system, continuity of steelwork in reinforced concrete structures, etc. The investigation on the spot was performed by a researcher and engineer with over fifteen years of industry experience all over the country. As a result of the investigation on the spot in 13 buildings, common grounding and structure grounding methods were dominant. The safety improvement methods include installation of equipotential bonding conductors for the connection to the main earthing terminal, equipotential bonding conductors for supplementary bonding, use of Surge Protective Devices (SPD), and safe connections between earthing conductors and the rebar.

Insulated, Passivated and Adhesively-Promoted Bonding Wire using Al2O3 Nano Coating

  • Soojae Park;Eunmin Cho;Myoungsik Baek;Eulgi Min;Kyujung Choi
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.2
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    • pp.1-8
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    • 2024
  • Bonding wires are composed of conductive metals of Au, Ag & Cu with excellent electrical conductivities for transmitting power and signals to wafer chips. Wire metals do not provide electrical insulation, adhesion promoter and corrosion passivation. Adhesion between metal wires is extremely weak, which is responsible for wire cut failures during thermal cycling. Organic coating for electrical insulation does not satisfy bondability and manufacturability, and it is complex to apply very thin organic coating on metal wires. Automotive packages require enhanced reliability of packages under harsh conditions. LED and power packages are susceptible to wire cut failures. Contrary to conventional OCB behaviors, forming gas was not required for free air ball formation for both Ag and Pd-coated Cu wires with Al2O3 passivation.

A Study on the Characteristics of Silicon Direct Bonding by Hydrogen Plasma Treatment (수소 플라즈마 처리에 의한 실리콘 직접접합 특성에 관한 연구)

  • Choe, U-Beom;Ju, Cheol-Min;Kim, Dong-Nam;Seong, Man-Yeong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.7
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    • pp.424-432
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    • 2000
  • The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.

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Electrical and Mechanical Properties of CNT-filled Solderable Electrically Conductive Adhesive (탄소나노튜브 함유 Solderable 도전성 접착제의 전기적/기계적 접합특성 평가)

  • Yim, Byung-Seung;Jeong, Jin-Sik;Lee, Jeong-Il;Oh, Seung-Hoon;Kim, Jong-Min
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.4
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    • pp.37-42
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    • 2011
  • In this paper, novel carbon nanotube (CNT)-filled Solderable electrically conductive adhesive (ECA) and joining process have been developed. To investigate the bonding characteristics of CNT-filled Solderable ECA, three types of Solderable ECAs with different CNT weight percent (0, 0.1, 1wt%) were formulated. For a joining process, the quad flat package (QFP) chip was used. The QFP chip had a size of $14{\times}14{\times}2.7$ mm and a 1 mm lead pitch. The test board had a Cu daisy-chained pattern with 18 ${\mu}m$ thick. After the bonding process, the bonding characteristics such as morphology of conduction path, electrical resistance and pull strength were measured for each formulated ECAs. As a result, the electrical and mechanical bonding characteristics for a QFP joints using CNT-filled ECA were improved about 10% compared to those of QFP joints using ECA without CNT.

Properties of Dielectric Constant and Bonding Mode of Annealed SiOCH Thin Film (열처리한 SiOCH 박막의 결합모드와 유전상수 특성)

  • Kim, Jong-Wook;Hwang, Chang-Su;Park, Yong-Heon;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.1
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    • pp.47-52
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    • 2009
  • We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

Properties of SiOCH Thin Film Bonding Mode by BTMSM/O2 Flow Rates (BTMSM/O2 유량변화에 따른 SiOCH 박막 결합모드의 2차원 상관관계 특성)

  • Kim, Jong-Wook;Hwang, Chang-Su;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.354-361
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    • 2008
  • The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

Anodic bonding characteristics of MCA to Si-wafer using pyrex #7740 glass intermediatelayer for MEMS applications (파일렉스 #7740 글라스 매개층을 이용한 MEMS용 MCA와 Si기판의 양극접합 특성)

  • Ahn, Jung-Hac;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.374-375
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    • 2006
  • This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

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A study on pre-bonding mechanism of Si wafer at HF pre-treatment (HF 전처리시 실리콘 기판의 초기접합 메카니즘에 관한 연구)

  • Kang, Kyung-Doo;Park, Chin-Sung;Lee, Chae-Bong;Ju, Byung-Kwon;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3313-3315
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    • 1999
  • Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera respectively. A bond characteristic on the interface was analyzed by using IT- IR. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si $OH{\cdots}(HOH{\cdots}HOH{\cdots}HOH){\cdots}OH-Si$. The bond strength depends on the HF pre-treatment condition before pre- bonding (Min:$2.4kgf/crn^2{\sim}Max:14.9kgf/crn^2$)

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EFFECT OF SURFACE ROUGHNESS ON THE ADHESION OF SILICON WAFERS PRIOR TO BONDING

  • Lee, D. H.;B. Derby
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.497-502
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    • 1998
  • To understand the effect of surface roughness on silicon wafer bonding, a continuum mechanical model is presented. This model is based on Obreimoff's experiment and the contact theory of rough surfaces. The surface energy of silicon was calculated to be much reduced than the theoretical value. Problems are discussed concerning surface film effects and the assumption of constant asperity radius and statistical distribution function.

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