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http://dx.doi.org/10.4313/JKEM.2009.22.1.047

Properties of Dielectric Constant and Bonding Mode of Annealed SiOCH Thin Film  

Kim, Jong-Wook (청주대학교 전자공학과)
Hwang, Chang-Su (공군사관학교 물리학과)
Park, Yong-Heon (공군사관학교 물리학과)
Kim, Hong-Bae (청주대학교 전자정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.1, 2009 , pp. 47-52 More about this Journal
Abstract
We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.
Keywords
Low-k; PECVD; BTMSM/$O_2$; SiOCH; FTIR; C-V characteristics;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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