• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.283-288
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• 2000

In this work, small-size, high-performance simple solenoid-type RF chip inductors utilizing an Al2O3 core material were investigated. Copper (Cu) wire with $40\mum$ diameter was used as the coils and the size of the chip inductor fabricated in this work was $2.1mm\times1.5mm\times1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on each end of backsides of a core material. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. The developed inductors have the self-resonant frequency (SRF) of 1.1 to 3.1 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Advances in aircraft and spacecraft science
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• v.4 no.6
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• pp.729-744
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• 2017

This investigation highlights rationale of electrically conductive nano adhesives for its essential application for Electromagnetic Interference (EMI) Shielding in satellites and Lightning Strike Protection in aircrafts. Carbon Nano Fibres (CNF) were functionalized by electroless process using Tollen's reagent and by Plasma Enhanced Chemical Vapour Deposition (PECVD) process by depositing silver on CNF. Different weight percentage of CNF and silver coated CNF were reinforced into the epoxy resin hardener system. Scanning Electron Microscopy (SEM) micrographs clearly show the presence of CNF in the epoxy matrix, thus giving enough evidence to show that dispersion is uniform. Transmission Electron Microscopy (TEM) studies reveal that there is uniform deposition of silver on CNF resulting in significant improvement in interfacial adhesion with epoxy matrix. There is a considerable increase in thermal stability of the conductive nano adhesive demonstrated by Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Four probe conductivity meters clearly shows a substantial increase in the electrical conductivity of silver coated CNF-epoxy composite compared to non-coated CNF-epoxy composite. Tensile test results clearly show that there is a significant increase in the tensile strength of silver coated CNF-composites compared to non-coated CNF-epoxy composites. Consequently, this technology is highly desirable for satellites and EMI Shielding and will open a new dimension in space research.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Aerospace Engineering and Technology
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• v.7 no.2
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• pp.67-75
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• 2008

The electrostatic charging/discharging mechanism and its effects, and the system design considerations in the space plasma environment are studied in this paper. The electrostatic discharge (ESD) effects are carefully taken into account for a design of the satellite system at the early stage of the development. Generally, the electrical design requirements are specified to protect the satellite system from the ESD effects in the electromagnetic compatibility specifications. Those requirements are included the grounding, the bonding, the shielding, the conductive coating, the electric interfacing and so on. The space charging is caused by the increasing of the voltage difference between the each locations on the satellite surface. If the space charging is continued up to threshold, it may be occurred the system failure. This phenomenon is depended on the mission of system, electrical and mechanical configuration, system operation, and orbit condition. Therefore the related requirements are properly tailored and concentrated into the safety design.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.5-11
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• 1994

This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.696-700
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• 2010

We fabricated red and blue organic light emitting display (OLEDs) which had the two kinds of multi-structure of ITO/HIL/HTL/EML/ETL/LiF/Al and ITO/HIL/HTL/EML/ETL/LiF/Al/LiF. In the case of red OLED that had LiF/Al/LiF structure compared to LiF/Al structure, the current density increased from 4.3 mA/$cm^2$ to 7.3 mA/$cm^2$, and the brightness increased from 488 cd/$m^2$ to 1,023 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 11.28 cd/A to 13.95 cd/A. Also in the case of blue OLED that had LiF on Al cathode layer, the current density increased from 1.2 mA/$cm^2$ to 1.8 mA/$cm^2$, and the brightness increased from 45 cd/$m^2$ to 85 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 3.69 cd/A to 4.82 cd/A. Through these experimental results it could be suggested that the LiF layer formed on Al prevents the oxidation of Al surface, and the electrode resistance become low with increase of supplied electrons, therefore the brightness and the efficiency are improved from the influence to the well-balanced bonding of electron and hole at emitting layer.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.333-338
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• 2011

In this work, we have fabricated the amorphous carbon (a-C:H) thin film by using unbalanced magnetron sputtering method with the magnetron source of inside/outside electromagnetic coils as the protective coating materials. We have investigated the tribological properties of amorphous carbon films prepared with various electromagnetic coil currents for the change of the plasma density, such as hardness, friction coefficient, adhesion, and surface roughness. Raman and HRTEM were used to study the microstructure of carbon films. In the result, the hardness and adhesion properties of a-C:H films were improved with increasing electromagnetic coil current due to the increase of the plasma density to the substrate. Thus, these results can be explained by the increase of $sp^2$ bonding and cluster number in the amorphous carbon film, related to the improved bombardment around substrate and the increased substrate temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.227-231
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• 2005

We have developed a microsystem with a capillary electrophoresis (CE) and an electrochemical detector (ECD). The microfabricated CE-ECD systems are adequate for a disposable type and the characteristics are optimized for an application to the electrochemical detection. The system was realized with polydimethylsiloxane (PDMS)-glass chip and indium tin oxide electrode. The injection and separation channels (80 um wide$\ast$40 um deep) were produced by moulding a PDMS against a microfabricated master with relatively simple and inexpensive methods. A CE-ECD systems were fabricated on the same substrate with the same fabrication procedure. The surface of PDMS layer and ITO-coated glass layer was treated with UV-Ozone to improve bonding strength and to enhance the effect of electroosmotic flow. For comparing the performance of the ITO electrodes with the gold electrodes, gold electrode microchip was fabricated with the same dimension. The running buffer was prepared by 10 mM 2-(N-morpholino)ethanesulfonic acid (MES) titrated to PH 6.5 using 0.1 N NaOH. We measured olectropherograms for the testing analytes consisted of catechol and dopamine with the different concentrations of 1 mM and 0.1 mM, respectively. The measured current peaks of dopamine and catechol are proportional to their concentrations. For comparing the performance of the ITO electrodes with the gold electrodes, electropherograms was measured for CE-ECD device with gold electrodes under the same conditions. Except for the base current level, the performances including sensitivity, stability, and resolution of CE-ECD microchip with ITO electrode are almost the same compared with gold electrode CE-ECD device. The disposable CE/ECD system showed similar results with the previously reported expensive system in the limit of detection and peak skew. When we are using disposable microchips, it is possible to avoid polishing electrode and reconditioning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.407-412
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• 2017

This paper introduces a biocompatible packaging system for implantable medical device having a hermetic sealing, such that a perfect physical and chemical isolation between electronic medical system and human body (including tissue, body fluids, etc.) is obtained. The hermetic packaging includes an electronic MEMS pressure sensor, power charging system, and bluetooth communication system to wirelessly measure variation of capacitance. The packaging was acquired by Quartz direct bonding and $CO_2$ laser welding, with a size of width $ 6cm{\times}length\;10cm{\times}lheight\;3cm$. Hermetic sealing of the packaged system was tested by changing the pressure in a hermetic chamber using a precision pressure controller, from atmospheric to 900 mmHg. We found that the packaged system retained the same count or capacitance values with sensor 1 - 25,500, sensor 2 - 26,000, and sensor 3 - 20,800, at atmospheric as well as 900 mmHg pressure for 5 hours. This result shows that the packaging method has perfect hermetic sealing in any environment of the human body pressure.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.1-5
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• 2004

A multi-layer flexible substrate is composed of copper(Cu)/polyimide that are known as good electrical conductivity, and low dielectric constant, respectively. In this study. conductor line of $5{\mu}m$-pitch was successfully fabricated without non-uniform pattern shape by electroplating copper and coating polyimide on patterned stainless steel. For multi-layer flexible substrate, via holes were drilled by UV laser and filled with electroplating copper and tin. And then, the PI layer with vias and conductor lines was stripped from stainless steel substrate. The PI layers were laminated at once with careful alignment between layers. Solid state reaction between tin and copper during lamination formed the intermetallic compounds of $Cu_6Sn_5$($\eta$-phase) and $Cu_3Sn$($\epsilon$-Phase) and achieved a complete inter-connection by vertically positioning the plugged via holes on via pad. The via formation process has several advantages; such as better electrical property and lower cost than V type via and paste via.