• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1054-1057
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• 2004

The nitrogenated diamond-like carbon (NDLC) exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) films. These diamond-like transparent properties in NDLC come in a material consisting of $sp^2$-bonded carbon versus the $sp^3$-carbon of DLC. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. Liquid crystal (LC) alignment capabilities with ion beam exposure on NDLC thin films and electro-optical (EO) performances of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) with oblique ion beam exposure on the NDLC thin film surface were studied. An excellent uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin films was observed. In addition, it can be achieved that the good EO properties of the ion-beam-aligned TN-LCD. Finally, we will present the residual DC property of the ion-beam-aligned TN-LCD on the NDLC thin film surface.

• Advances in nano research
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• v.12 no.1
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• pp.81-99
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• 2022

The aim of current work is to evaluate thermo-electrical characteristics of graphene nanoplatelets Reinforced Composite (GNPRC) coupled with magneto-electro-elastic (MEE) face sheet. In this regard, a cylindrical smart nanocomposite made of GNPRC with an external MEE layer is considered. The bonding between the layers are assumed to be perfect. Because of the layer nature of the structure, the material characteristics of the whole structure is regarded as graded. Both mechanical and thermal boundary conditions are applied to this structure. The main objective of this work is to determine critical temperature and critical voltage as a function of thermal condition, support type, GNP weight fraction, and MEE thickness. The governing equation of the multilayer nanocomposites cylindrical shell is derived. The generalized differential quadrature method (GDQM) is employed to numerically solve the differential equations. This method is integrated with Deep Learning Network (DNN) with ADADELTA optimizer to determine the critical conditions of the current sandwich structure. This the first time that effects of several conditions including surrounding temperature, MEE layer thickness, and pattern of the layers of the GNPRC is investigated on two main parameters critical temperature and critical voltage of the nanostructure. Furthermore, Maxwell equation is derived for modeling of the MEE. The outcome reveals that MEE layer, temperature change, GNP weight function, and GNP distribution patterns GNP weight function have significant influence on the critical temperature and voltage of cylindrical shell made from GNP nanocomposites core with MEE face sheet on outer of the shell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1440-1441
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• 1995

We fabricated diode-type silicon field emitter array device and tested the current-voltage characteristics. Silicon oxide layer having the thickness of $1{\mu}m$ is grown in the (100) oriented n-type silicon substrates. Oxide layer is patterned by the mask with $10{\mu}m$ diameter circles. Silicon substrate is then etched using NAF 1 solution to form the sharp tip arrays as an electron source. In the UHV test station, we tested the current-voltage characteristics for the samples. Turn-on voltage was about 140V and maximum emission current was $310{\mu}A$ at 164V. We studied about silicon bonding process for future work, too.

• Journal of Powder Materials
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• v.20 no.2
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• pp.120-124
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• 2013

This study is carried out to develop the new process for the fabrication of ultra-fine electrodes on the flexible substrates using superhydrophobic effect. A facile method was developed to form the ultra-fine trenches on the flexible substrates treated by plasma etching and to print the fine metal electrodes using conductive nano-ink. Various plasma etching conditions were investigated for the hydrophobic surface treatment of flexible polyimide (PI) films. The micro-trench on the hydrophobic PI film fabricated under optimized conditions was obtained by mechanical scratching, which gave the hydrophilic property only to the trench area. Finally, the patterning by selective deposition of ink materials was performed using the conductive silver nano-ink. The interface between the conductive nanoparticles and the flexible substrates were characterized by scanning electron microscope. The increase of the sintering temperature and metal concentration of ink caused the reduction of electrical resistance. The sintering temperature lower than $200^{\circ}C$ resulted in good interfacial bonding between Ag electrode and PI film substrate.

• Tunnel and Underground Space
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• v.22 no.2
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• pp.157-161
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• 2012

ZnO-98% and $Ga_2O_3$-2% powder were consolidated by shock compaction technique, which uses a high performance explosive. The microstructural and electrical characteristics of $ZnOGa_2O_3$ compact with density of 97% and hardness of 220~250 $H_v$ were investigated using SEM (Scanning Electron Microscope) and X-ray diffraction analysis, respectively. In the microstructures of the compact, there were no visible cracks at most of the surface areas, and interparticle bonding between powder particles was confirmed. The broadened peaks were detected due to deformation of crystallited size and high electric resistances were confirmed due to increased grains because of shock energy with a high pressure and high velocity.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.9-17
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• 2018

Aluminum (Al) and its alloys have been used widely in a variety of industries such as structural, electronic, aerospace, and particularly automotive industries due to their lightweight characteristic, outstanding ductility, formability, high oxidation and corrosion resistance, and high thermal and electrical conductivity. Al have different kinds of alloys according to the various additional elements system and they should be selected properly depending on their effectiveness and suitability for their particular purpose. The major elements for Al alloys are silicon (Si), magnesium (Mg), manganese (Mn), copper (Cu), and zinc (Zn). In order for Al alloys to use for each industry, it is necessary to study of Al to Al joining and/or the Al to dissimilar materials joining to combine the individual parts into one. Many studies on joining technologies about Al to Al and Al to dissimilar materials have been performed such as press joining, bolted joint, welding, soldering, riveting, adhesive bonding, and brazing. This study reviews a variety of Al alloys and their joining method including its principles and properties with recent trends.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.