• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.25-37
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• 2020

In this study, hybridization of graphene oxide and metal was carried out by the functional groups containing oxygen and thermal treatment for reduction in order to enhance the electrical conductivity and magnetic properties of graphene materials. Graphene-metal hybrid materials were synthesized using the oxygen-containing functional groups (-OH, -COOH and so on) on the surface of graphene oxide by replacing them with metal ions via ion exchange method as well as thermal reduction. The metals used in this study were Fe, Ag, Ni, Zn, and Fe/Ag, and it was confirmed that metal particles of uniform size were well dispersed on the graphene surface through SEM, TEM, and EDS. All of the metal particles on the graphene surface had an oxide-crystalline structure. To check the electrical properties, sheet resistance of the rGO-metal hybrid sample was measured on the PET film made by the dip-coating, and the specific resistance was calculated by measuring the thickness of the specimen through SEM. As a result, the specific resistance was in the range of 2.14×10-5 and 3.5×10-3 ohm/cm.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.319-325
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• 2010

3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

• Journal of the Korean Society of Safety
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• v.23 no.1
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• pp.66-71
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• 2008

A new route to phthalocyanine complexes were developed to synthesize these products by fusion in the absence of solvent. This new method of synthesis without using solvent has advantages over the conventional synthetic methods since there are no risk of explosion and formation of harmful vapor from organic solvent. Reaction of PcFe with axial ligands such as $PcFe(4-VP)_2$[Pc: Phthalocyanine, 4-VP: 4-Vinylpyridine] and $PcFe(VIM)_2$[VIM: 1-Vinylimidazole] afforded powderlike, pure dark greenish blue colored products. The resulted products are soluble in $CH_2Cl_2$ and found to be complexes of the type $PcFeL_2$. Spectral properties were studied with ATR-FTIR and UV/Vis. Thermal and electrical characterization was also performed. Phthalocyanine complexes exhibit useful properties such as UV/Vis blocking, antistatic characteristics and excellent thermal stability and we anticipate various applicability in numerous products.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• Journal of Powder Materials
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• v.23 no.1
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• pp.21-25
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• 2016

The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.258-263
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• 2012

Fe-diluted Si alloys grown on p-type Si (100) substrates by pulsed-laser deposition method were studied for structural, electrical, and magnetic properties. The X-ray diffraction patterns for these alloy samples showed a few of peaks with cubic structures such as FeSi, $Fe_3Si$, and $Fe_4Si$. The Fe-composition in alloys are confirmed as Fe atomic percent about 1.25~6.49 % from energy dispersive spectroscopy measurement. The resistivity as a function of the reciprocal temperature was indicated an exponential increase with two activation energies of 5.21 and 7.79 meV. The maximum value of the magnetization at 10 K was about 100 emu/cc, and the ferromagnetism was also observed until 350 K from total magnetization as a function of temperature with applied magnetic field of 3,000 Oe.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• Carbon letters
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• v.6 no.1
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• pp.41-46
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• 2005

Plasma carbon blacks of 20~30 nm diameter were synthesized by direct decomposition of natural gas using a hybrid plasma torch system with 50 kW direct current and 4 MHz of radio frequency. The insulating rector which inside diameter of 400 mm and length of 1500 mm, respectively was kept at 300~$400^{\circ}C$ during the preparation. The ultimate analysis of plasma carbon blacks reveals that the raw plasma carbon blacks contains a large quantity of volatile which is mainly consist of hydrogen. Therefore devolatilization of raw plasma carbon blacks were carried out at $900^{\circ}C$ for one hour under nitrogen atmosphere. The devolatilization leads to the decrease in electrical resistivity and surface oxygen functional groups of plasma carbon black significantly. In order to investigate the plasma carbon as a catalyst support, devolatilized plasma black at $900^{\circ}C$ (DPB) supported PtAu catalyst was synthesized by sodium boronhydride reduction method. Electrochemical measurements and direct formic acid fuel cell test indicated that catalytic activity of DPB supported PtAu catalyst for formic acid oxidation was similar to that of Vulcan XC-72 of commercial carbon black supported one.

• Journal of the Korean earth science society
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• v.26 no.5
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• pp.429-435
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• 2005

3D RMR (Rock Mass Rating) analysis has been performed by applying the Geostatistical integration technique for geophysical and borehole data. Of the various geostatistical techniques for the integrated data analysis, in this study, we applied the SKlvm (Simple Kriging with local varying means) method that substitutes the values of the interpreted geophysical result with the mean values of the RMR at the location to be inferred. The substitution is performed by the indicator transform between the result of geophysical interpretation and the observed RMR values at borehole sites. The used geophysical data are the electrical resistivity and MT result, and 10 borehole sites are investigated to obtain the RMR values. This integrated analysis makes the interpretation to be more practical for identifying the realistic RMR distribution that supports the regional geological situation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.