• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.852-857
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• 2017

In this paper, measurements of ion mobility were performed in oxygen at gas pressures of 44.52 - 101.19 kPa using the drift tube method. Over this pressure range, mobility values were within the limits of 1.796 to $3.821cm^2{\cdot}V^{-1}{\cdot}s^{-1}$ were determined and ion mobility shown to decrease non-linearly with increasing gas pressure towards a certain level of saturation. Ion mobility measured in air was lower than that measured in oxygen at the same gas pressure. Finally, a parameter correction method for calibrating the relationship between the ion mobility and gas pressure in oxygen was proposed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.867-872
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• 2016

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.26-32
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• 1998

We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

• Journal of IKEEE
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• v.13 no.4
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• pp.15-21
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• 2009

Proxy Mobile IP in IETF is a network-based mobility management scheme to solve the problem of host-based mobility management scheme, Mobile IP. PMIP shows the better performance in the aspect of mobility, but PMIP, as a legacy of Mobile IP based on "best effort service", lacks of consideration of QoS. In this thesis, a novel mobility support scheme is proposed for mobility and QoS support based on PMIP in MPLS networks.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.7
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• pp.987-993
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• 2014

Pitching machines have been around for many years for casual amusement purpose or professional athletes' training usage, and so forth. The current pitching machines are usually built on the firm ground and do not have any mobility function. In this paper, we develop a pitching machine that has both ball-shooting and mobility functions. Our developed pitching machine consists of two parts. The upper body part has a function of shooting a ball using two DC motors and the lower body part has a function of mobility like mobile robots by using two wheels governed by DC motors. All these functions are operated wirelessly by Android smartphones via bluetooth. The control of each DC motor is done by ${\epsilon}$-PID control method in which the gain tuning is simplied by using a single parameter ${\epsilon}$. Simulation and actual experiment show that our developed pitching machine has both nontrivial shooting and mobility features.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.13-18
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• 2016

In Internet of Things (IoT) environment, a variety of smart devices are connected to Internet through various network technologies such as 4G/5G, WiBro, Bluetooth, etc. in order to provide the remote monitoring service such as smart healthcare service, etc. Most standard mobility management protocols based on IETF Mobile IP may not be suitable for Internet of Things (IoT) environments due to constrained power, constrained CPU processing and memory capacity, and large signalling overhead which are inherently accompanied by various devices in IoT environments. In this article, we propose a new mobility management protocol CoMP (CoAP-based Mobility Managemenbt Protocol) for reliable mobility management in IoT environments. The architecture and algorithm to achieve both reliability and simplicity for IoT mobility management are proposed. Finally, performance has been evaluated by both mathematical analysis and simulation.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.334-341
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• 2021

Operation modes and control strategies for single-phase mobility charging station utilizing photovoltaic (PV) generation and energy storage systems (ESS) are proposed. This approach generates electric power from PV to transmit the mobility, ESS, and then transfer it to the grid when surplus electric power is generated during daytime. However, the PV power cannot be generated during night-time, and ESS and the mobility system can be charged using grid power. The power balance control based on power fluctuations and the resonant current control that can compensate harmonic components have been added to increase the stability of the system. The MATLAB/Simulink simulation was carried out to verify the proposed control method, and the 2-kW single-phase grid-tied PV-ESS smart mobility charger was built and tested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.246-250
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• 2021

TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 cm²/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.