• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1092-1095
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• 2001

Steady state thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin with a thickness of 25${\mu}$m. It was assumed that the generated heat which is mainly by the on-state voltage drop, 9V for 12kV diode, is dissipated by way of the conduction through diodes layers to bonding wire and of the convection at the surface of passivating resin. It was predicted by the thermal analysis that the temperature rise of a pn junction of the 12kV diode can reach at the range of 16∼34$^{\circ}C$ under the given boundary conditions. The thickness and thermal conductivity(0.3∼3W/m-K) of the passivating resin did little effect to lower thermal resistance of the diode. As the length of the bonding wire increased, which means the distance of heat conduction path became longer, the thermal resistance increased considerably. The thermal analysis results imply that the generated heat of the diode is dissipated mainly by the conduction through the route of diode-dummy wafer-bonding wire, which suggests to minimize the length of the wire for the lowest thermal resistance.

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.625-633
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• 2015

The effect of altitude on thermal conduction, surface temperature, and thermal radiation of partial arc was investigated on the basis of molecular gas dynamics to facilitate a deep understanding of the pollution surface discharge mechanism. The DC flashover model was consequently modified at high altitude. The validity of the modified DC flashover model proposed in this paper was proven through a comparison with the results of high-altitude simulation experiments and earlier models. Moreover, the modified model was found to be better than the earlier modified models in terms of forecasting the flashover voltage. Findings indicated that both the thermal conduction coefficient and the surface thermodynamics temperature of partial arc had a linear decrease tendency with the altitude increasing from 0 m to 3000 m, both of which dropped by approximately 30% and 3.6%, respectively. Meanwhile, the heat conduction and the heat radiation of partial arc both had a similar linear decrease of approximately 15%. The maximum error of DC pollution flashover voltage between the calculation value according to the modified model and the experimental value was within 6.6%, and the pollution flashover voltage exhibited a parabola downtrend with increasing of pollution.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.644-648
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• 2009

Temperature dependency of resistivity of the carbon black-polyethylene composites below and above percolation threshold is studied based on the electrical conduction mechanism. Temperature coefficient of resistance of the composites below percolation threshold changed from minus to plus, increasing volume fraction of carbon black; this trend decreased with increasing volume fraction of carbon black. The temperature dependence of resistivity of the composites below percolation threshold can be explained with a tunneling conduction model by incorporating the effect of thermal expansion of the composites into a tunneling gap. Temperature coefficient of resistance of the composites above percolation threshold was positive and its absolute value increased with increasing volume fraction of carbon black. By assuming that the electrical conduction through percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of carbon black, the temperature dependency of the resistivity above percolation threshold has been well explained without violating the universal law of conductivity. The apparent activation energy is estimated to be 0.14 eV.

• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.1156-1165
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• 2017

A high performance interleaved bridgeless boost power factor correction (PFC) rectifier operating under the critical current conduction mode (CrM) is proposed in this paper to improve the efficiency and system performance of various applications, such as nano-grid systems. By combining the interleaved technique with the bridgeless topology, the circuit contains two independent branches without rectifier diodes. The branches operate in interleaved mode for each respective half-line period. Moreover, when operating in CrM, all the power switches take on soft-switching, thereby reducing switching losses and raising system efficiency. In addition, the input current flows through a minimum amount of power devices. By employing a commercial PFC controller, an effective control scheme is used for the proposed circuit. The operating principle of the proposed circuit is presented, and the design considerations are also demonstrated. Simulations and experiments have been carried out to evaluate theoretical analysis and feasibility of the proposed circuit.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1422-1424
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• 2002

EVA-OH (Ethylene-vinyl acetate-vinyl alchol terpolymers) were prepared by using the transesterification reaction between ethylene-vinyl acetate copolymer and alchol. Structural and thermal analyses were accomplished with FTIR and DSC. Space charge behaviors of EVA-OH were investigated using PEA method. Electrical conduction currents were also measured. As the increase of conversion rate, melting point increased and we could observe changes in space charge distributions and the increase of electrical conduction currents of EVA-OH.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Bulletin of the Korean Chemical Society
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• v.22 no.7
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• pp.663-668
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• 2001

Thermodynamic and electrical functions of aminophenol and anthranilic acid complexes with Mn(Ⅱ), Fe(Ⅱ), Co(Ⅱ), Ni(Ⅱ) and Cu(Ⅱ) were determined. ΔG°, ΔH° and ΔS° were calculated with the help of stability constant values at different temperatures. It was found that the complexing processes have an exothermic nature. The studied complexes behave like semiconductors. The conduction takes place according to hopping mechanism. To show the composition of complexes conductometric and photometric titrations, IR spectra, thermal analysis and X-ray diffraction techniques were employed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.126-127
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• 2008

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.42-45
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• 2002

Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.