• 제목/요약/키워드: Electric flash

검색결과 59건 처리시간 0.025초

아크플래시 장해 대책 보호계전기 협조 검토 (Protection Relay Coordination Study for Reducing Arc Flash Hazard)

  • 이강완;양정욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2015년도 제46회 하계학술대회
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    • pp.545-546
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    • 2015
  • Arc flash hazard study is required for the electric power system of industrial plant nowadays. Arc flash incident energy and level are calculated by arc flash hazard study. The arcing fault clearing time is determined by the response time of protection devices. This paper is protection devices coordination study to reduce potential incident energy for industrial electric power system.

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345kV 및 154kV 송전철탑의 뇌사고율 예측계산 (The Calculation of Lightning Flashover rate of 345kV/154kV Transmission Tower)

  • 심응보;우정욱;곽주식;민병욱;황정일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 A
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    • pp.452-454
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    • 2001
  • This paper described the calculation results of lightning flashover rate on the 345kV and 154kV transmission system of KEPCO. The back-flashover rate and shielding failure rate was calculated by FLASH(lightning flashover rate calculation program from IEEE) and KEPRI's own program which is based on the EGM(Electro Geometrical Model) method. The estimated lightning flashover late of 345kV transmission system of double circuit was 1.0 flash per 100km-year, and the lightning flashover rate of 154kV transmission line was 2.0 flash Per 100km-year approximately.

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ATA 버스 방식을 위한 Flash Memory Drive 개발 (Development of a Flash Memory Drive for ATA bus)

  • 강경식;장문기;황연범;정남모;박진수
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2005년도 춘계종합학술대회
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    • pp.547-550
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    • 2005
  • 본 논문에서는 기존의 하드디스크가 가지고 있는 단점을 개선하기 위하여 반도체 소자인 Flash Memory를 이용한 ATA 버스 방식의 Flash Memory Drive를 설계 및 구현하고 성능을 평가하였다. 일반적인 하드디스크의 경우, 외부의 충격에 비교적 민감하며 이로 인해 데이터의 손상이나 디스크의 오류가 발생되게 된다. 또한 내부적인 구조로 인하여 구동 시 많은 전류를 필요로 하며 경량화에 어려움이 있다. 그러나 반도체 소자인 Flash Memory를 이용하여 하드디스크를 제작하게 되면 소전류로도 구동이 가능하며 경량화가 가능할 뿐만 아니라 특히 외부의 충격에 강하므로 자동차, 선박, 산업용과 더불어 군사용으로의 활용이 가능할 것으로 기대된다.

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Flash DISK와 Ethernet을 이용한 전동차의 통신 이중화 및 백업장치에 관한 연구 (On the study of depulication method of communication and Backup device for an Electric Car using Flash Disk and Ethernet)

  • 서용원;연준상;양오
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 합동 추계학술대회 논문집 정보 및 제어부문
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    • pp.472-475
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    • 2002
  • This paper presents a high speed ethernet communication and depulication method of communication to prevent decrease of reliability that was generated by high speed communication. Thus communication reliability was improved and this paper was considered that if any physical breakdown of line of communication occurred, other line of communication could operate collect. This paper used Flash memory for setting storage of backup data at Electric Car that have an humidity and a temperature and an impact. also improved reliability and besides matching data format to windows data format realized to confirm application program at PC or note book computer.

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멀티 레벨 낸드 플레쉬 메모리에서 주변 셀 상태에 따른 데이터 유지 특성에 대한 연구 (Study of Data Retention Characteristics with surrounding cell's state in a MLC NAND Flash Memory)

  • 최득성;최성운;박성계
    • 전자공학회논문지
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    • 제50권4호
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    • pp.239-245
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    • 2013
  • 멀티 레벨 낸드 플레쉬 메모리에서 주위 셀의 문턱 전압상태에 따른 데이터 유지 특성을 연구하였다. 열을 가해 셀의 데이터 보전특성을 판정하는 열적 열하 특성에서 주목하는 셀의 문턱 전압이 변화하는데 문턱전압의 변화는 선택된 셀 주위에 있는 셀들이 가장 낮은 문턱 전압 상태로 있는 셀들의 수가 많을수록 커진다. 그 이유는 전하의 손실이 이루어지는 낸드 플레쉬 셀의 본질적인 특성 뿐 아니라, 주위 셀 사이의 측면 전계 때문이다. 전계에 대한 모사 결과로부터 전계의 증가 현상을 발견할 수 있고, 이로 인한 전하의 손실이 소자 스케일 다운에 따라 더 증가함을 알 수 있다.

수정된 CMOS 플래시 AD변환기 구현 (Implementation of Modified CMOS Flash AD Converter)

  • 권승탁
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.549-550
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    • 2008
  • This paper proposed and designed the modified flash analog-to-digital converter(ADC). The speed of new architecture is similar to conventional flash ADC but the die area consumption is much less due to reduce numbers of comparators. The circuits which are implemented in this paper is simulated with LT SPICE and layout with Electric tools of computer.

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Process Variation on Arch-structured Gate Stacked Array 3-D NAND Flash Memory

  • Baek, Myung-Hyun;Kim, Do-Bin;Kim, Seunghyun;Lee, Sang-Ho;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.260-264
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    • 2017
  • Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

실업계 고등학교용 자동차 전기회로 실습 시스템의 개발 (Development of Experimental System for Automotive Electrical Circuit in Technical High School)

  • 이용주;서영달
    • 한국자동차공학회논문집
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    • 제15권4호
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    • pp.154-160
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    • 2007
  • The experimental system, developed in this research, is a teaching material that trains and practices automobile electric circuit in technical high school. This system consists of a textbook, 15 kinds of instruments and 62 kinds of 'Flash' animations. Textbook includes automobile electric circuits and experimental process. Instruments have 23 kinds of drills. Its is composed of electrical relays, motors, switches, light bulbs, electrical lines and power unit so on. 'Flash' animation displays an electrical current flow on circuits actually. Both Dacum method and ISD skill have been conducted to analysis job and design syllabus. The experimental system have been implemented on technical high school class to evaluate its objectivity and effect. It is expected that this system can contribute to studying of car service.

에러 보정 코드를 이용한 비동기용 대용량 메모리 모듈의 성능 향상 (Performance Improvement of Asynchronous Mass Memory Module Using Error Correction Code)

  • 안재현;양오;연준상
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.112-117
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    • 2020
  • NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

인젝터 압력이 단공노즐 감압비등 분무에 미치는 영향 (Effect of Injection Pressure on the Flash Boiling Spray from Simple Orifice Nozzle)

  • 이현창;차현우;강동현
    • 한국분무공학회지
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    • 제27권1호
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    • pp.42-49
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    • 2022
  • Flash boiling occurs in a couple of modern engineering systems and understanding its mechanism is important. In this experimental study, discharge coefficient of flash boiling spray from simple orifice nozzle was measured, and backlight imaging was acquired at injection pressure to 6.0 bar and temperature to 163℃ for the purpose. Pressurized water by pump was used for working fluid and was heated by electric heater and ejected through simple orifice nozzle diameter of 0.5 mm. High speed camera with long distance microscope was used for backlight imaging in two FoV having magnification of 3.3 and 0.64. The decrease of discharge coefficient according to degree of superheating and evolution of flash boiling spray imaged at various pressure and temperature were explained by the pressure field inside the injector.