• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.545-546
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• 2015

Arc flash hazard study is required for the electric power system of industrial plant nowadays. Arc flash incident energy and level are calculated by arc flash hazard study. The arcing fault clearing time is determined by the response time of protection devices. This paper is protection devices coordination study to reduce potential incident energy for industrial electric power system.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.452-454
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• 2001

This paper described the calculation results of lightning flashover rate on the 345kV and 154kV transmission system of KEPCO. The back-flashover rate and shielding failure rate was calculated by FLASH(lightning flashover rate calculation program from IEEE) and KEPRI's own program which is based on the EGM(Electro Geometrical Model) method. The estimated lightning flashover late of 345kV transmission system of double circuit was 1.0 flash per 100km-year, and the lightning flashover rate of 154kV transmission line was 2.0 flash Per 100km-year approximately.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.547-550
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• 2005

This treatise studies and developed flash memory drive of ATA bus that use flash memory which is employment amount memory semiconductor to improve problem of hard-disk that is existing ATA bus. While general hard-disk is sensitive external impact or shock, but flash memory drive do save chapter as well as is strong in external impact using semiconductor memory element that disk is not low electric power, light weight possible . Practical use is expected do save chapter for embedded system or black box for vehicles, soldiers hereafter therefore.

• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.472-475
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• 2002

This paper presents a high speed ethernet communication and depulication method of communication to prevent decrease of reliability that was generated by high speed communication. Thus communication reliability was improved and this paper was considered that if any physical breakdown of line of communication occurred, other line of communication could operate collect. This paper used Flash memory for setting storage of backup data at Electric Car that have an humidity and a temperature and an impact. also improved reliability and besides matching data format to windows data format realized to confirm application program at PC or note book computer.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.239-245
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• 2013

The data retention characteristics depending on neighbor cell's threshold voltage (Vt) in a multilevel NAND flash memory is studied. It is found that a Vt shift (${\Delta}Vt$) of the noted cell during a thermal retention test is increased as the number of erase-state (lowest Vt state) cells surrounding the noted cell increases. It is because a charge loss from a floating gate is originated from not only intrinsic mechanism but also lateral electric field between the neighboring cells. From the electric field simulation, we can find that the electric field is increased and it results in the increased charge loss as the device is scaled down.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.549-550
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• 2008

This paper proposed and designed the modified flash analog-to-digital converter(ADC). The speed of new architecture is similar to conventional flash ADC but the die area consumption is much less due to reduce numbers of comparators. The circuits which are implemented in this paper is simulated with LT SPICE and layout with Electric tools of computer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.4
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• pp.154-160
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• 2007

The experimental system, developed in this research, is a teaching material that trains and practices automobile electric circuit in technical high school. This system consists of a textbook, 15 kinds of instruments and 62 kinds of 'Flash' animations. Textbook includes automobile electric circuits and experimental process. Instruments have 23 kinds of drills. Its is composed of electrical relays, motors, switches, light bulbs, electrical lines and power unit so on. 'Flash' animation displays an electrical current flow on circuits actually. Both Dacum method and ISD skill have been conducted to analysis job and design syllabus. The experimental system have been implemented on technical high school class to evaluate its objectivity and effect. It is expected that this system can contribute to studying of car service.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

• Journal of ILASS-Korea
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• v.27 no.1
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• pp.42-49
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• 2022

Flash boiling occurs in a couple of modern engineering systems and understanding its mechanism is important. In this experimental study, discharge coefficient of flash boiling spray from simple orifice nozzle was measured, and backlight imaging was acquired at injection pressure to 6.0 bar and temperature to 163℃ for the purpose. Pressurized water by pump was used for working fluid and was heated by electric heater and ejected through simple orifice nozzle diameter of 0.5 mm. High speed camera with long distance microscope was used for backlight imaging in two FoV having magnification of 3.3 and 0.64. The decrease of discharge coefficient according to degree of superheating and evolution of flash boiling spray imaged at various pressure and temperature were explained by the pressure field inside the injector.