• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.191-192
• /
• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.206-209
• /
• 2002

With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

• Transactions on Electrical and Electronic Materials
• /
• 제4권4호
• /
• pp.13-17
• /
• 2003

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

• Journal of Mechanical Science and Technology
• /
• 제17권6호
• /
• pp.914-924
• /
• 2003

The interaction and breakdown of vortices over the Leading Edge Extension (LEX) - Delta wing configuration has been investigated through wing-surface pressure measurements, the off-surface flow visualization, and 5-hole probe measurements of the wing wake section. The description focused on analyzing the interaction and the breakdown of vortices depending on the angle of attack and the sideslip angle. The Effect of angle of attack and sideslip angle on the aerodynamic load characteristics of the model is also presented. The sideslip angle was found to be a very influential parameter of the vortex flow over the LEX-delta wing configuration. The introduction of LEX vortex stabilized the vortex flow, and delayed the vortex breakdown up to a higher angle of attack. The vortex interaction and breakdown was promoted on the windward side, whereas it was suppressed on the leeward side.

• Transactions on Electrical and Electronic Materials
• /
• 제18권4호
• /
• pp.199-202
• /
• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• 전기전자학회논문지
• /
• 제22권3호
• /
• pp.565-569
• /
• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• 한국전기전자재료학회논문지
• /
• 제18권10호
• /
• pp.877-882
• /
• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 C
• /
• pp.1649-1651
• /
• 2001

The effect of ribbed spacers having metallic particle attached to the post-type spacer on dielectric breakdown phenomena has been investigated using electric field analysis for imaginary streamer process and a breakdown experiment. It was described that the electric field analysis and the dielectric breakdown test were performed on the case that the particle was attached to the various position of the ribbed spacer having various shapes. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
• /
• pp.540-542
• /
• 2000

This paper describes the particle-initiated breakdown characteristics of various spacers, which have a ribbed surface, in the presence of a metallic particle. The particle was attached on the surface of each spacer. The breakdown voltages were measured by changing the length and thickness of the rib. Also the electrical field analyses were performed. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.1921-1923
• /
• 2000

This paper describes the particle-initiated breakdown characteristics of various spacers, which have a ribbed surface, in the presence of a metallic particle. The particles was attached on the surface of each spacer. The breakdown voltages were measured by changing the particle position on the spacer, the length and thickness of the rib. Also the electrical field analyses were performed. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.