• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.53.2-53.2
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.250.2-250.2
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• 2009

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.35-39
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• 2016

Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.411-411
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.912-915
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• 2004

A vacuum environment is very important for NGL(Next Generation Lithography) apparatuses such as EUVL(Extreme Ultra Violet Lithography) or EPL(Electron Projection Lithography) and so on. The performance of these systems is dominated by vacuum level of processing and positioning accuracy of a stage. So, ultra-precision stage usable in a high vacuum level is needed for the improved performance of these devices. In contrast to atmospheric condition, a special attention must be paid to guide bearing, actuator and other elements. In this paper, air bearing is adopted because of its very high motional accuracy. So, air bearing is designed to be vacuum compatible using differential exhaust method, which prevents air from entering into vacuum chamber. For this, leakage analysis is performed theoretically and verified from experiment.

• Electronics and Telecommunications Trends
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• v.13 no.5 s.53
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• pp.38-52
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• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.40-45
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• 2003

Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultra-violet (EUV) reflective multilayer properties. The stacking status and optical properties are analyzed using cross-sectional transmission electron microscope (TEM), and reflectometer. About 1.5% of maximum reflectivity can be acquired as predicted in optical simulation, which is thought to be originated from the diffusion inhibition property. Phase defect correctability of the multilayer can be enhanced by the insertion of Ru barrier layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.258-258
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• 2009

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.619-628
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• 2015

In this paper, we consider a method for estimating a stripe-type defect and the reconstruction of a defect-free L/S type mask used in lithography. Comparing diffraction patterns of defected and defect-free masks, we derive equations for the estimation of the location and size of the defect. We construct an analytical model for this problem and derive closed form equations to determine the location and size using phase retrieval problem solving techniques. Consequently, we develop an algorithm that determines a defect-free mask pattern. An example shows the validity of the equations.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.1-5
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• 2016

In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.