• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.194-200
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• 1995

2-3nm의 공간분해능을 갖는 전자에너지손실분광법(Electron Energy Loss Spectroscopy, EELS)을 이용하여, 전기적 특성조사된 YBa2Cu3O7-$\delta$ 고온초전도체 쌍결정의 결정경계(grain boundary)에서 산소의 조성변화를 조사하였다. Misorientation angle이 $14^{\circ}$, $28^{\circ}$,$ 30^{\circ}$인 3개의 쌍결정 중에서 Josephson junction 특성을 보인 $28^{\circ}$ 및 $30^{\circ}$결정경계에서의 oxygen 1s absorption edge는 결정내부에서의 oxygen 1s absorption edge와 매우 다름을 알 수 있었다. 이는 결정경계에서의 산소조성이 결정내부에 비해 낮음을 의미하며, 그 영역이 결정경계 부근 20-40nm로, coherence length에 비해 큼을 알 수 있다. 반면에, flux pinningxmr성을 보인 $14^{\circ}$결정경계에서의 oxygen 1s absorption edge는 결정내부에서와 별 차이를 보이지 않았다. 따라서 일반적으로 관찰되어온, misorientation angle이 큰 결정경계에서의 Josephson junction 특성은 결정경계 부근에서 산소의 조성이 낮아지는데에 기인하며, 그 원인은 결정경계면을 통해 산소가 out-diffusion되기 때문인 것으로 생각된다.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.1-5
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• 1996

Noncrystalline films of diamond-like carbon (DLC) have been prepared by laser ablation technique at room temperature. A Q-switched Nd-YAG laser beam with wavelength of 1064 nm and pulse duration of 10 ns was focused onto a graphite target with power densities of about $10^9 W/\textrm{cm}^2$. The physical properties of the resulting films were analyzed with density, hardness, and resistivity measurements. The surface and bonding structure were investigated by atomic force microscopy (AFM), Raman spectroscopy, electron energy loss spectroscopy (EELS).

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.359-365
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• 2013

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [$SiH_4/H_2$], was fixed at 0.03; the substrate temperature was varied from room temperature to $600^{\circ}C$. By raising the substrates temperature up to $400^{\circ}C$, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si $L_{2,3}$ edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to $600^{\circ}C$, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of $180^{\circ}C$ and the maximum peak was observed at ${\sim}370^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.146-149
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• 2015

Silicate glasses with different $Nd_2O_3$ concentrations were prepared through conventional melt-quenching methods while PbS quantum dots (QDs) were precipitated through heat treatment. The peak wavelengths of absorption and the photoluminescence of PbS QDs shifted to the short-wavelength side as the concentration of $Nd_2O_3$ increased. The electron energy loss spectroscopy (EELS) indicated that $Nd^{3+}$ ions were preferentially distributed inside the PbS QDs instead of the glass matrix. In addition, there was no significant change in the lifetimes of the $Nd^{3+}:^4F_{3/2}$ fluorescence between the as-prepared glass ($607{\mu}s$) and the heat-treated glass($576{\mu}s$). $Nd^{3+}$ ions were surrounded by oxygen instead of sulfur and the Nd-O clusters probably acted as nucleating centers for the formation of PbS QDs inside the glasses.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.74-74
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• 1999

TEM(투과전자현미경, Transmission Electron Microscop)은 결정재료뿐 아니라 비정질 재료까지도 원자단위의 구조를 연구하는데 매우 유용한 도구이다. 특히 200kV의 가속전압 투과전자현미경에 FEG(Field Emission Gun) 전자총이 장착되기 시작하면서 TEM은 비정질 구조 연구에 하나의 핵심적인 도구로서의 역할이 크게 기대되는 장비가 되었다. 본 연구에서는 TEM의 microanalysis accessary인 EELS(Electron Energy Loss Spectroscopy)technique을 주로 이용하던 기존의 방법대신 고 분해능(HRTEM(High Resolution Transmission Electron Microscopy)의 image로부터 비정질 정량묘사의 유일한 도구인 원자분포함수(RDF(Radial Distribution Function))로의 Reconstruction을 Simulation을 이용하여 시도하였다. 비정질 HRTEM image의 정량분석을 통하여 이 분야에서의 TEM의 한계를 이해하기 위하여 몇 모델을 제시하고 사용하였다. 또한 비정질 구조를 정량적으로 묘사하는 도구인 원자분포함수를 알아보고 비정질재료를 보다 물리적으로 모델링하기 위하여 가능한 모델 제시 후 첫 단계로서 HRTEM image에서 원자분포함수를 이끌어내기 위한 모델링을 수행하고 비정질 게르마늄(a-Ge) film에 대하여 실제로 적용하여 보았다. 마지막으로 실험적인 접근으로 200kV FE-TEm (poingt resolution 0.14nm) 으로 비정질 Ge의 image를 solw Scan CCD를 이용한 Elastic image를 Through Focus로 얻었으며 수치적인 정량비교를 역격자 공간에서 출발한 가장 물리적인 구조 모델을 이용하여 수행하였다. 모든 정량비교는 image의 Fourier 변환인 Diffractogram으로 하였다. 결론적으로, 많은 복잡한 수치 처리과정을 거쳐야 하지만 HRTEM의 image로부터 구조에 대한 정보(RDF)는 명확하게 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.64-69
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• 2019

Methylammonium lead triiodide ($MAPbI_3$)-based perovskite solar cells potentially have potential advantages such as high efficiency and low-cost manufacturing procedures. However, $MAPbI_3$ is structurally unstable and has low phase-change temperatures ($30^{\circ}C$ and $130^{\circ}C$); it is necessary to solve these problems. We investigated the crystal structure and phase separation using real-time temperature-change X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. $MAPbI_3$ has a tetragonal structure, and at about $35^{\circ}C$ the c-axis contracts, transforming $MAPbI_3$ into the related cubic crystal structure. In addition, at $130^{\circ}C$, phase separation occurs in which $CH_3NH_2$ and HI at the center of the unit cell of the perovskite structure are extracted by gas, leavingand only $PbI_2$ of the three-component structure, is produced as the final solid product.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.497-502
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• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.