• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• Kyungpook Mathematical Journal
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• 제58권4호
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• pp.747-759
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• 2018

A graph G = (V (G), E(G) of order n = |V (G)| and size m = |E(G)| is said to be odd harmonious if there exists an injection $f:V(G){\rightarrow}\{0,\;1,\;2,\;{\ldots},\;2m-1\}$ such that the induced function $f^*:E(G){\rightarrow}\{1,\;3,\;5,\;{\ldots},\;2m-1\}$ defined by $f^*(uv)=f(u)+f(v)$ is bijection. While a bipartite graph G with partite sets A and B is said to be bigraceful if there exist a pair of injective functions $f_A:A{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ and $f_B:B{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ such that the induced labeling on the edges $f_{E(G)}:E(G){\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ defined by $f_{E(G)}(uv)=f_A(u)-f_B(v)$ (with respect to the ordered partition (A, B)), is also injective. In this paper we prove that odd harmonious graphs and bigraceful graphs are equivalent. We also prove that the number of distinct odd harmonious labeled graphs on m edges is m! and the number of distinct strongly odd harmonious labeled graphs on m edges is [m/2]![m/2]!. We prove that the Cartesian product of strongly odd harmonious trees is strongly odd harmonious. We find some new disconnected odd harmonious graphs.

• 한국결정학회지
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• 제12권4호
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• pp.197-206
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• 2001

수평 전기로에서 AgInS₂ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 AgInS₂ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. AgInS₂ 단결정 박막의 성장 조건은 증발원의 온도 680℃, 기판의 온도 410℃였고 성장 속도는 0.5㎛/hr였다. AgInS₂ 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence)스펙트럼이 597.8 nm(2.0741 eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 박폭치(FWHM)도 121 arcsec로 가장 작아 최적 성장 조건임을 알수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.35×10/sup 16/㎤, 294㎠/V·s 였다. AgInS₂ /SI(SEmi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap E/sub g/(T)는 Varshni 공식에 따라 계산한 결과 2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K)이었으며 광전류 스펙트럼으로부터 Hamiltopn matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.1541eV이며 spin-orbit Δso 값은 0.0129eV임을 확인하였다. 10K일때 광전류 봉우리들은 n=1 일때 A₁-, B-₁와 C₁-exction 봉우림을 알았다.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• 호남수학학술지
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• 제34권3호
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• pp.403-408
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• 2012

In this paper, we prove that if K is a convex body in $E^n$ and $E_i$ and $E_o$ are inscribed ellipsoid and circumscribed ellipsoid of K respectively with ${\alpha}E_i=E_o$, then $\[({\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n{\geq}V(K)V({\Gamma}^{\ast}_pK){\geq}\[(\frac{1}{\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n$. Lutwak and Zhang[6] proved that if K is a convex body, ${\omega}^2_n=V(K)V({\Gamma}_pK)$ if and only if K is an ellipsoid. Our inequality provides very elementary proof for their result and this in turn gives a lower bound of the volume product for the sets of constant width.

• 대한방사선기술학회지:방사선기술과학
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• 제21권1호
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• pp.59-64
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• 1998

[ $CaSO_4$ ] thermoluminescent phosphors was made by sintring the $CaSO_4$ after doping the transition elements Tm, Pd, Dy, V, Mo, Zr. The maximum Peaks are found in the measured $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) TL glow curve at $130^{\circ}C,\;110^{\circ}C,\;140^{\circ}C,\;100^{\circ}C$, and $120^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.02eV, 1.32eV, 1.12eV, 0.80eV, and 1.17eV, respectively. The thermoluminescence process in $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr)are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) phosphors are linear within $4{\times}10^{-4}{\sim}1Gy$ of X-rays.

• 한국재료학회지
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• 제19권9호
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• pp.510-515
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• 2009

The compound of 2,6-Bis[(9-phenylcarbazolyl)ethenyl]naphthalene (BPCEN-1), 2-[6-{1-Cyano-2-(9-phenylcarbazoly)vinyl}naphthyl]-3-(9-phenylcarbazolyl)acrylonitrile (BPCEN-2), 2,6-Bis[{4-(1-naphthy l)phenylamino} styrenyl] naphthalene (BNPASN-1), 2-[6-{1-Cyano-2-(naphthylphenylaminophenyl) vinyl}naphthyl]-3-(naphthylphenylaminophenyl)acrylonitrile (BNPASN-2) was analyzed electrochemically and spectroscopically and can be obtained by bonding phenylcarbazolyl, naphthylphenylaminophenyl and -CN ligands to 2,7-naphthalene. The electrochemical and spectroscopic study resulted in the P-type (BPCEN-1, BNPASN-1) being changed to N-type (BPCEN-2, BNPASN-2) according to -CN bonding despite having the same structure. The value of band gap(Eg) was revealed to be small as HOMO had shifted higher and LUMO lower. The Eg value for naphthylphenylaminophenyl ligand was reduced because it has a smaller HOMO/LUMO value than that of phenylcarbazolyl from a structural perspective. The electrochemical HOMO/LUMO values for BPCEN-1, BPCEN-2, BNPASN-1, BNPASN-2 were measured to be 5.55eV / 2.83eV, 5.73eV / 3.06eV, 5.48eV / 2.78eV, and 5.53eV / 2.98eV, respectively. By -CN ligand, the UV max, Eg and PL max were shifted to longer wavelength in their spectra and the luminescence band could be also confirmed to be broad in the photoluminescence (PL) spectrum.

• 현장농수산연구지
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• 제22권2호
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• pp.51-58
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• 2020

2019년 11월, 국내의 뱀장어 양식장에서 양식 중이던 뱀장어가 피부궤양 및 피부의 점상출혈 소견을 보이며 지속적으로 폐사하였다. 일련의 폐사는 2019년 11월부터 12월까지 지속되었다. Vibrio 속 균주 1E1-2는 첫 번째 폐사 사례에서 폐사한 뱀장어의 출혈성 복수에서 분리되었고 균주 2A3-1는 두 번째 폐사 사례에서 폐사한 뱀장어의 복수에서 분리되었으며 균주 3K1-2는 세 번째 폐사 사례에서 폐사한 뱀장어의 신장에서 분리되었다. 16S rRNA gene 시퀀스 분석으로, 분리균주 1E1-2와 3K1-2가 V. fluvialis NBRC 103150T와 가장 높은 유사도를 나타내며 V. fluvialis로 동정되었으며, 균주 2A3-1는 V. plantisponsor NBRC103148T와 가장 높은 유사도를 나타내며 V. plantisponsor로 확인되었다. 항생제 감수성 실험 결과로, V. fluvialis 1E1-2는 tetracycline과 chloramphenicol에 대하여 중등도의 감수성을 보였고 trimethoprim-sulfamethoxazole에 대하여 내성을 나타내었다. V. plantisponsor 2A3-1는 ciprofloxacin과 levofloxacin에 대하여 중등도의 감수성을 나타내었고 trimethoprim-sulfamethoxazole에 대하여 내성을 나타내었다. V. fluvialis 3K1-2는 tetracycline에 대하여 중등도의 감수성을 나타내었고 ampicillin과 trimethoprim-sulfamethoxazole에 대하여 내성을 나타내었다. 이는 국내 양식 뱀장어에서의 항생제 내성 비브리오 감염증 사례로, 의미 깊은 보고라고 할 수 있다.

• 조명전기설비학회논문지
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• 제14권3호
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• pp.38-42
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• 2000

플라즈마 중합박막은 내정전 플라즈마 중합장치에 의해서 제조되었다. 중칙률을 4O[W]에서 100[W] 사이에서 최대값을 나타내었다. ESCA 분석에샤는 285.4와 285.5[eV]에서 -CH2, -C-를 나타내는 피크들을 보였다. 무시할 수 없는 양으로 산소와 그룹화 되어 있는 532.8[eV]에서의 C-O와 533.8[eV)에서의 C-O[C/O=8]를 확인하였다. ESR 분석에서 강한 진폭이 나타나는 곡선은 매우 약한 방전전력에 영향을 받은 포화상태를 나타낸다. 알림기를 함유한 -CH-CH=CH- 구조로 사료된다. 제조된 플라즈마 중합박막은 100[Hz]~200[kHz]의 주파수에서 비유전율이 3,5정도를 보이고 유전정접은 0.08의 낮은 값올 냐타내었다.