• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.84-84
• /
• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.120-123
• /
• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

• Bulletin of the Korean Chemical Society
• /
• 제18권9호
• /
• pp.922-928
• /
• 1997

The conformational transition of poly(L-proline) (PLP), Form Ⅱ → Form Ⅰ and the intermolecular aggregation of the product, Form Ⅰ, during and after the transition in water-propanol (1:7, 1:9, 1:15.7, and 1:29 v/v) were studied. For the study, the viscosity change and excess light scattering intensity were measured in the course of the transition which was determined by the Form Ⅰ fraction, fI of the sample solution. For the PLP sample of molecular weight Mv=31,000 the experimental results show that the reaction course is roughly divided into three regions: in the first region [fI=0.27 to 0.40 (- [α]D=400 to 330)], the conformational change of Form Ⅱ → Form Ⅰ occurs with decrease of viscosity, in the second region [fI=0.40 to 0.80 (- [α]D=330 to 120)], a partial side-by-side (p-S-S) type aggregation in which Form Ⅰ blocks interact with each other, which induces the increase of viscosity, starts to occur, and in the third region [fI=0.80 to 1.00 (- [α]D=120 to 15)], a side-by-side type (raft like) aggregation of Form Ⅰ or an end-to-end (E-E) type aggregation occurs according to the solvent situation, i.e., in a water-rich medium [water-propanol (1:9 or 1:7 v/v)], the (S-S) type aggregation with a gross decrease in viscosity occurs while in a water-poor medium [water-propanol (1:29 or 1:15.7 v/v), the (E-E) type aggregation with a large increase in viscosity occurs. The (S-S) type aggregation was promoted at high temperatures. Based on the structure of PLP, a reasonable mechanism for the (p-S-S) and (S-S) aggregation which occurs with the transition of Form Ⅱ → Form Ⅰ is considered. The suggested mechanism was also supported by the result of chain length effect of PLP for the aggregation.

• 한국결정성장학회지
• /
• 제17권5호
• /
• pp.179-186
• /
• 2007

[ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$와 $C_{11}-exciton$ 봉우리임을 알았다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권2호
• /
• pp.267-275
• /
• 2015

In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

• 대한화학회지
• /
• 제51권3호
• /
• pp.265-269
• /
• 2007

국부적인 결정구조와 에너지 띠 간격 간 상관관계를 고찰하기 위하여 Nb를 포함하는 일련의 불소 산화물에 대하여 결정구조와 자외선-가시광선 확산 반사율 스펙트럼을 비교, 연구하였다. 이 실험에서 다룬 RbSrNb2O6F와 RbCaNb2O6F, RbNb2O5F는 공통적으로, 꼭지점 공유를 하고 있는 NbO5F 팔면체로 구성되어 있 다. 구조적 뒤틀림 정도의 척도로 볼 수 있는 Nb-O(F)-Nb 평균 결합각은 RbSrNb2O6F에서 158.6°, RbCaNb2O6F 에서 149.6° 그리고 RbNb2O5F에서 139.5o이다. 확산 반사율 스펙트럼으로부터 구한 에너지 띠 간격은 Nb-O(F)-Nb 결합각이 감소할수록 증가하는 경향을 보였다. 즉 RbSrNb2O6F, RbCaNb2O6F, RbNb2O5F 각각의 화합물에 대해 서 3.48 eV, 3.75 eV, 4.03 eV 의 값을 나타내었다. 이러한 실험적 결과는 Nb를 포함하는 불소 산화물에서 국 부구조의 변화를 통해 띠 간격을 약 0.6 eV의 범위에서 조절할 수 있음을 의미한다.

• Journal of Radiation Protection and Research
• /
• 제33권2호
• /
• pp.53-59
• /
• 2008

X선과 같은 고에너지 방사선에 의한 DNA 손상 중 간접적인 손상을 확인하기 위하여 탄탈륨(Ta) 박막위에 동결건조 과정으로 만들어진 pGEM-3Zf(-) plasmid DNA 단일층(monolayer)의 박막을 만든 다음, 에너지가 1.5 keV인 Al $K{\alpha}$ X선을 0분, 3분, 7분, 10분 동안 초고진공 상태에서 이 DNA 단일층에 조사하여 평균 흡수선량(mean absorbed dose)의 변화에 따른 DNA 손상을 관찰하였다. 또한 3 eV의 낮은 에너지 전자선을 조사하여 그 결과를 X선을 조사한 경우와 비교하였다. X선과 낮은 에너지 전자선으로 조사된 plasmid DNA를 전기영동(electrophoresis) 방법을 이용해 supercoiled DNA와 unsupercoiled DNA로 분리한 후 각각을 정량적으로 분석하였다. Supercoiled DNA는 X선과 3 eV 전자선의 조사에 따른 평균흡수선량이 증가함에 따라 선형적으로 감소했다. 그와 반대로 circular DNA와 crosslinked form 1 DNA는 평균흡수선량이 증가함에 따라 선형적으로 증가했다. 이것은 supercoiled DNA가 낮은 에너지 전자와 상호작용하여 외가닥 절단(single strand break)을 일으켰고 그 결과 unsupercoiled DNA로 변화되었음을 보여준다. 본 실험을 통해 X선과 같은 고에너지 방사선에 의한 DNA의 간접적 손상이 일어남을 관찰할 수 있었고, DNA의 이온화 에너지보다 작은 에너지($0{\sim}10\;eV$)를 갖는 전자에 의해서도 DNA 손상이 일어날 수 있음을 확인할 수 있었다.

• 대한의생명과학회지
• /
• 제27권4호
• /
• pp.283-290
• /
• 2021

Severe acute respiratory syndrome coronavirus (SARS-CoV2) is a major coronavirus that infects humans with human Coronavirus (HuCoV)-229E, HCoV-OC43, HCoV-HKU1, HCoV-NL63, Severe acute respiratory syndrome coronavirus (SARS-CoV) and Middle east respiratory syndrome coronavirus (MERS-CoV). SARS-CoV2 is currently a global pandemic pathogen. In this study, we developed conventional RT-PCR based diagnostic system for the detection of SARS-CoV2 which is relatively inexpensive but has high stability and a wide range of users. Three conventional RT-PCR primer sets capable of forming specific band sizes by targeting the ORF1ab [232 nucleotide (nt)], E (200 nt) and N (288 nt) genes of SARS-CoV2 were developed, respectively, and it were confirmed to be about 10~100 times higher detection sensitivity than the previously reported methods. In addition, a standard positive control that can generate specific amplicons by reacting with the developed RT-PCR primers and verify the false-positiv from contamination of the laboratory was produced. Therefore, the diagnostic system that uses the RT-PCR method is expected to be used to detect SARS-CoV2.

• Natural Product Sciences
• /
• 제5권2호
• /
• pp.104-106
• /
• 1999

The chloroform fraction of the aqueous extract of the fresh leaves of Vitex negundo by bioactivity guided isolation yielded a pure compound, rotundial (1) which has shown potent mosquito repellent activity. Using spectral data (UV, IR, $^1H\;&\;^{13}C$ NMR and MS) its structure has been elucidated.

• 한국정보통신학회논문지
• /
• 제18권1호
• /
• pp.115-122
• /
• 2014

본 논문에서는 eFuse OTP 메모리가 넓은 동작전압 영역을 갖도록 하기 위해서 V2V($=2V{\pm}10%$)의 regulation된 전압을 이용한 RWL 구동회로와 BL 풀-업 부하회로를 제안하므로 수 십 $k{\Omega}$의 post-program 저항을 센싱하면서 OTP 셀의 blowing되지 않은 eFuse를 통해 흐르는 읽기 전류를 $100{\mu}A$ 이내로 억제하여 신뢰성을 확보하였다. 그리고 OTP 셀 어레이 사이즈를 1행 ${\times}$ 32열과 4행 ${\times}$ 8열의 경우에 대해 OTP IP 크기를 비교한 결과 32비트 eFuse OTP의 레이아웃 면적은 각각 $735.96{\mu}m{\times}61.605{\mu}m$ ($=0.04534mm^2$), $187.065{\mu}m{\times}94.525{\mu}m$ ($=0.01768mm^2$)로 4행 ${\times}$ 8열의 32비트 eFuse OTP 사이즈가 1행 ${\times}$ 32열의 32비트 eFuse OTP 사이즈보다 더 작은 것을 확인하였다.