Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.11a
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- Pages.120-123
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- 2003
A Study point defect for thermal annealed ZnSe/GaAs epilayer
- Hong, Kwang-Joon (Department of Physics, Chosun University) ;
- Lee, Sang-Youl (Department of Physics, Chosun University)
- Published : 2003.11.13
Abstract
The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton,