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Low Temperature Sintering of (Bi1/2Na1/2)TiO3-SrTiO3 Ceramics and Their Ferroelectric and Piezoelectric Properties (BNT-ST 세라믹스의 저온 소결과 강유전 및 압전 특성)

  • Hyunhee Kwon;Ga Hui Hwang;Chae Il Cheon;Ki-Woong Chae
    • Journal of Sensor Science and Technology
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    • v.32 no.4
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    • pp.238-245
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    • 2023
  • 0.75(Bi1/2Na1/2)TiO3-0.25SrTiO3 (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na2CO3 or 0.5 mol% CuO and 0.25 mol% Na2CO3. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na2CO3-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d33*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na2CO3-added sample showed smaller values of the strain and d33* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na2CO3 displayed intermediate P-E and S-E hysteresis curves.

Optical and Optoelectric Properties of PbCdS Ternary Thin Films Deposited by CBD

  • Mohammed, Modaffer. A.;Mousa, Ali M.;Ponpon, J.P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.2
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    • pp.117-123
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    • 2009
  • $Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

Odd Harmonious and Strongly Odd Harmonious Graphs

  • Seoud, Mohamed Abdel-Azim;Hafez, Hamdy Mohamed
    • Kyungpook Mathematical Journal
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    • v.58 no.4
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    • pp.747-759
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    • 2018
  • A graph G = (V (G), E(G) of order n = |V (G)| and size m = |E(G)| is said to be odd harmonious if there exists an injection $f:V(G){\rightarrow}\{0,\;1,\;2,\;{\ldots},\;2m-1\}$ such that the induced function $f^*:E(G){\rightarrow}\{1,\;3,\;5,\;{\ldots},\;2m-1\}$ defined by $f^*(uv)=f(u)+f(v)$ is bijection. While a bipartite graph G with partite sets A and B is said to be bigraceful if there exist a pair of injective functions $f_A:A{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ and $f_B:B{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ such that the induced labeling on the edges $f_{E(G)}:E(G){\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ defined by $f_{E(G)}(uv)=f_A(u)-f_B(v)$ (with respect to the ordered partition (A, B)), is also injective. In this paper we prove that odd harmonious graphs and bigraceful graphs are equivalent. We also prove that the number of distinct odd harmonious labeled graphs on m edges is m! and the number of distinct strongly odd harmonious labeled graphs on m edges is [m/2]![m/2]!. We prove that the Cartesian product of strongly odd harmonious trees is strongly odd harmonious. We find some new disconnected odd harmonious graphs.

Photocurrent Study on the Splitting of the Valence Band and Growth of $AgInS_2$GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 $AgInS_2$단결성 박막의 성장과 가전자대 갈라짐에대한 광전류 연구)

  • 홍광준
    • Korean Journal of Crystallography
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    • v.12 no.4
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    • pp.197-206
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    • 2001
  • A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

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A Study on Electroreflectance in Si-Doped $Al_{0.33}Ga_{0.67}As$ (Si이 첨가된 $Al_{0.33}Ga_{0.67}As$에서의 Electroreflectance에 관한 연구)

  • 김근형;김동렬;김종수;김인수;배인호;한병국
    • Electrical & Electronic Materials
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    • v.10 no.7
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    • pp.692-699
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    • 1997
  • The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

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A NEW LOWER BOUND FOR THE VOLUME PRODUCT OF A CONVEX BODY WITH CONSTANT WIDTH AND POLAR DUAL OF ITS p-CENTROID BODY

  • Chai, Y.D.;Lee, Young-Soo
    • Honam Mathematical Journal
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    • v.34 no.3
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    • pp.403-408
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    • 2012
  • In this paper, we prove that if K is a convex body in $E^n$ and $E_i$ and $E_o$ are inscribed ellipsoid and circumscribed ellipsoid of K respectively with ${\alpha}E_i=E_o$, then $\[({\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n{\geq}V(K)V({\Gamma}^{\ast}_pK){\geq}\[(\frac{1}{\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n$. Lutwak and Zhang[6] proved that if K is a convex body, ${\omega}^2_n=V(K)V({\Gamma}_pK)$ if and only if K is an ellipsoid. Our inequality provides very elementary proof for their result and this in turn gives a lower bound of the volume product for the sets of constant width.

A Study on Composition and Dosimetry of the $CaSO_4$ Phosphors ($CaSO_4$ 열형광체의 조성과 선량측정에 관한 연구)

  • Lee, Duek-Kyu
    • Journal of radiological science and technology
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    • v.21 no.1
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    • pp.59-64
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    • 1998
  • [ $CaSO_4$ ] thermoluminescent phosphors was made by sintring the $CaSO_4$ after doping the transition elements Tm, Pd, Dy, V, Mo, Zr. The maximum Peaks are found in the measured $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) TL glow curve at $130^{\circ}C,\;110^{\circ}C,\;140^{\circ}C,\;100^{\circ}C$, and $120^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.02eV, 1.32eV, 1.12eV, 0.80eV, and 1.17eV, respectively. The thermoluminescence process in $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr)are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) phosphors are linear within $4{\times}10^{-4}{\sim}1Gy$ of X-rays.

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Electrochemical and Spectrum Properties of 2,7-Naphthalene Ligand Compounds (2,7-Naphthalene Ligand Compounds의 전기화학 및 분광학적 특성)

  • Choi, Don-Soo;Kim, Mu-Young;Hyung, Kyung-Woo
    • Korean Journal of Materials Research
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    • v.19 no.9
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    • pp.510-515
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    • 2009
  • The compound of 2,6-Bis[(9-phenylcarbazolyl)ethenyl]naphthalene (BPCEN-1), 2-[6-{1-Cyano-2-(9-phenylcarbazoly)vinyl}naphthyl]-3-(9-phenylcarbazolyl)acrylonitrile (BPCEN-2), 2,6-Bis[{4-(1-naphthy l)phenylamino} styrenyl] naphthalene (BNPASN-1), 2-[6-{1-Cyano-2-(naphthylphenylaminophenyl) vinyl}naphthyl]-3-(naphthylphenylaminophenyl)acrylonitrile (BNPASN-2) was analyzed electrochemically and spectroscopically and can be obtained by bonding phenylcarbazolyl, naphthylphenylaminophenyl and -CN ligands to 2,7-naphthalene. The electrochemical and spectroscopic study resulted in the P-type (BPCEN-1, BNPASN-1) being changed to N-type (BPCEN-2, BNPASN-2) according to -CN bonding despite having the same structure. The value of band gap(Eg) was revealed to be small as HOMO had shifted higher and LUMO lower. The Eg value for naphthylphenylaminophenyl ligand was reduced because it has a smaller HOMO/LUMO value than that of phenylcarbazolyl from a structural perspective. The electrochemical HOMO/LUMO values for BPCEN-1, BPCEN-2, BNPASN-1, BNPASN-2 were measured to be 5.55eV / 2.83eV, 5.73eV / 3.06eV, 5.48eV / 2.78eV, and 5.53eV / 2.98eV, respectively. By -CN ligand, the UV max, Eg and PL max were shifted to longer wavelength in their spectra and the luminescence band could be also confirmed to be broad in the photoluminescence (PL) spectrum.

Isolation and Characterization of Antibiotic Resistant Vibrio Strains from Japanese Eel (Anguilla Japonica) Cultured in Korea (국내산 양식 뱀장어에서 항생제 내성 비브리오 세균 분리 및 특성)

  • Park, S.Y.;Kim, J.H.;Jun, J.W.
    • Journal of Practical Agriculture & Fisheries Research
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    • v.22 no.2
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    • pp.51-58
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    • 2020
  • Continuous mortality in commercially cultured Japanese eel (Anguilla japonica), showing symptoms of dermal ulcerations and focal hemorrhages on the body, occurred on a private farm in November, 2019 in Korea. A series of mortality had been described in one local eel culture farm from November to December in 2019. From the three cases, three isolates of Vibrio spp. were recovered from the blood, ascitic fluid, and kidney of the dead fish, respectively. Based on the 16S rRNA sequence comparisons, the Vibrio isolates from the 1st and 3rd cases (strain named 1E1-2 and 3K1-2) were identified as V. fluvialis and the isolate from the 2nd case was identified as V. plantisponsor (strain named 2A3-1). Moreover, the 16S rRNA-based phylogenetic analysis revealed that strain 1E1-2 and 3K1-2 were most similar to V. fluvialis NBRC 103150T, and strain 2A3-1 was most similar to V. plantisponsor NBRC103148T. According to the results of the antibiotic resistance determination, V. fluvialis 1E1-2 showed intermediate resistance to tetracycline and chloramphenicol, and was resistant to trimethoprim-sulfamethoxazole. V. plantisponsor 2A3-1 showed intermediate resistance to ciprofloxacin and levofloxacin, and was resistant to trimethoprim-sulfamethoxazole. V. fluvialis 3K1-2 showed intermediate resistance to tetracycline, and was resistant to ampicillin and trimethoprim-sulfamethoxazole. These results have provided the evidences on the occurrence of antibiotic-resistant Vibrio infection in commercially cultured Japanese eels are present in Korea.

The Structures and Dielectric Properties of Plasma Polymerized Polyethylene (플라즈마 중합 폴리에틸렌 구조와 유전특성)

  • 김두석
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.14 no.3
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    • pp.38-42
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    • 2000
  • Plasma polymerized thin films were manufactured inter-electrode coupled plasma polymerization apparatus. The deposition rate reached its maximum between 40[W] and 100[W]. In the ESCA analysis, peaks revealing -CH2, -CH, -C- were present at 285.4 and 285.5[eV] respectively. The C=O peak at 532.8[eV] and the C-O peak at 533.8[eV], which were grouped with an unignorable amount of oxygen were conformed. In ESR analysis, the curve revealing strong amplification was in saturation, which was affected by weak power. This is considered as a -CH-Ch=Ch- structure containing the Allyl group. The relative permittivity of the plasma polymerized thin films was about 3.5 at a frequency of 100[Hz]∼200[kHz]. The dissipation factor showed allow value of 0.008.

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