• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.312-320
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• 2019

In this paper, we design a 512Kb eFlash IP using 110nm eFlash cells. We proposed eFlash core circuit such as row driver circuit (CG/SL driver circuit), write BL driver circuit (write BL switch circuit and PBL switch select circuit), read BL switch circuit, and read BL S/A circuit which satisfy eFlash cell program, erase and read operation. In addition, instead of using a cross-coupled NMOS transistor as a conventional unit charge pump circuit, we propose a circuit boosting the gate of the 12V NMOS precharging transistor whose body is GND, so that the precharging node of the VPP unit charge pump is normally precharged to the voltage of VIN and thus the pumping current is increased in the VPP (boosted voltage) voltage generator circuit supplying the VPP voltage of 9.5V in the program mode and that of 11.5V in the erase mode. A 12V native NMOS pumping capacitor with a bigger pumping current and a smaller layout area than a PMOS pumping capacitor was used as the pumping capacitor. On the other hand, the layout area of the 512Kb eFlash memory IP designed based on the 110nm eFlash process is $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Korean Journal of Heritage: History & Science
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• v.55 no.4
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• pp.278-294
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• 2022

To date, cultural property education has seen rapid quantitative growth due to national and personal needs. However, qualitative growth is lacking. The objectives of cultural property education have not been established, and therefore, even its identity is not clear. The most pressing issue at present in cultural property education is to first set objectives. This study aimed to analyze the objectives of current cultural property education, identify the problems, and set new objectives to meet significant national and personal needs in terms of education. The problems with the objectives of current cultural property education are that the persons interested in the education do not understand the concept of the education objectives clearly and that the objectives do not contain much actual content of the education. Also, the objectives of the education do not take into account the dynamic competencies and interests of the learners and do not satisfy the changes of the times. To solve these problems, new cultural property education, called 'U.V.E.C.,' was offerred. U.V.E.C. education is aimed at understanding cultural properties, recognizing their value, and enjoying them, and at creating culture. The objectives of U.V.E.C. cultural property education were set such that they can be modified flexibly in a learner-centric way with clear and practical format and contents. Based on this direction, stepwise objectives were set including overall objectives, detailed objectives, and practice objectives, and objective cases of each step were proposed. Considering the generality of the education and the distinct characteristics of the cultural properties, the U.V.E.C. education objectives took into account the diversity of behavioral objectives, clearness in statements, the objectives of problem solving, the initiative of learners and openness for expression outcomes. The U.V.E.C. objectives are clear and specific so that teachers can enhance their pedagogical efficiency and learners are able to develop interesting and diversified competencies. In addition, it is expected that the U.V.E.C. objectives will significantly affect objective setting for education on cultural properties which have not been studied widely. Further systemic and specific studies on the contents and methods of the U.V.E.C. education would help to change the overall education on cultural properties and position the field as a new academic area.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.5
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• pp.2221-2224
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• 2014

Objective: To explore the relationship between expressions of cell adhesion molecules CD44 v6 and E-cadherin (E-cad) and lymphatic metastasis in non-small cell lung cancer (NSCLC). Materials and Methods: Eightyseven tissue samples obtained from patients with primary NSCLC were collected in our hospital from Dec., 2007 to Dec., 2012, and the expressions of CD44 v6 and E-cad gene proteins in these samples were detected by immunohistochemical method. Results: In the tissue without lymphatic metastasis, the positive expression rate of CD44 v6 was significantly lower, whereas the normal expression rate of E-cad was notably higher than that with lymphatic metastasis (55.6% vs. 78.4%, 47.2% vs. 21.6%), and both differences had statistical significance (P<0.05). Besides, CD44 v6 and E-cad expressions had a significant correlation in the NSCLC tissue with lymphatic metastasis (P<0.05). Conclusions: The positive expression of CD44 v6 and abnormal expression of E-cad may play a very important role in promoting lymphatic metastasis of NSCLC, with synergistic effect. Hence, detection of CD44 v6 and E-cad expressions is conductive to judging the lymphatic metastasis in NSCLC.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.225-225
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• 2011

The dielectric and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass by RF magnetron sputtering method were investiged using reflection electron energy loss spectroscopy (REELS). The band gap was estimated from the onset values of REELS spectra. The band gaps of GIZO, HIZO and IZO thin films are 3.1 eV, 3.5 eV and 3.0 eV, respectively, Hf and Ga incorporated into IZO results in an increase in the energy band gap of IZO by 0.5 eV and 0.1 eV. The dielectric functions were determined by comparing the effective cross section determined from experimental REELS with a rigorous model calculation based on the dielectric response theory, using available software package, good agreement between the experimental and fitting results gives confidence in the accuracy of the determined dielectric function. The main peak of Energy Loss Function (ELF) obtained from IZO shows at 18.42 eV, which shifted to 19.43 eV and 18.15 eV for GIZO and HIZO respectively, because indicates the corporation of cation Ga and Hf in the composition. The optical properties represented by the dielectric function e, the refractive index n, the extinction coefficient k, and the transmission coefficient, T of HIZO and IZO thin films were determined from a quantitative analysis of REELS. The transmission coefficient was increased to 93% and decreased to 87% in the visible region with the incorporation of Hf and Ga in the IZO compound.

• Microbiology and Biotechnology Letters
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• v.51 no.1
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• pp.37-42
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• 2023

Neutral and non-essential amino acid, glutamine (Gln), plays an essential role in supplying nitrogen to all the amino acids and nucleotides in the mammalian body. Gln is also the most important carbon source that provides intermediates for gluconeogenesis and fatty acid synthesis and supplements the tricarboxylic acid cycle in fast-growing cancer cells. Among the known 14 Gln transporter genes, soluted carrier family 1 member 5 (SLC1A5) has been reported to be closely associated with cancer cell growth. Three variants (v1, v2, and v3) have been derived from SLC1A5. Here, we established a heterologous gene expression system for the active form of human SLC1A5 variant-2 (hSLC1A5v2) in Escherichia coli. v2 is the smallest variant that has not yet been studied. Four expression systems were investigated: pBAD, pCold, pET, and pQE. We also addressed the problem of codon usage bias. Although pCold and pET overexpressed hSLC1A5v2 in E. coli, they were functionally inactive. hSLC1A5v2 using the pBAD system was able to catalyze the successful transport of Gln, even if it was not highly expressed. Initial activity of hSLC1A5v2 for [¹⁴C] Gln uptake in E. coli reached up to 6.73 μmole·min^-1·gDW^-1 when the cell was induced with 80 mM L-arabinose. In this study, we demonstrated a heterologous expression system for the human membrane protein, SLC1A5, in E. coli. Our results can be used for the functional comparison of SLC1A5 variants (v1, v2, and v3) in future studies, to facilitae the developement of SLC1A5 inhibitors as effective anticancer drugs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.1
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• pp.183-190
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• 2010

We propose an eFuse one-time programmable (OTP) memory cell based on a logic process, which is programmable by an external program voltage. For the conventional eFuse OTP memory cell, a program datum is provided with the SL (Source Line) connected to the anode of the eFuse going through a voltage drop of the SL driving circuit. In contrast, the gate of the NMOS program transistor is provided with a program datum and the anode of the eFuse with an external program voltage (FSOURCE) of 3.8V without any voltage drop for the newly proposed eFuse cell. The FSOURCE voltage of the proposed cell keeps either 0V or the floating state at read mode. We propose a clamp circuit for being biased to 0V when the voltage of FSOURCE is in the floating state. In addition, we propose a VPP switching circuit switching between the logic VDD (=1.8V) and the FSOURCE voltage. The layout size of the designed eFuse OTP memory IP with Dongbu HiTek's $0.15{\mu}m$ generic process is $359.92{\times}90.98{\mu}m^2$.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.135-140
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• 2011

By investigating photoluminescence (PL) spectra (20 K) of undoped and Be-doped p-type GaSb/GaAs epilayers, the origin has been analyzed by the change due to doping density. We have observed that the PL peak shifts to higher energy and the full-width half-maximum (FWHM) decreases with increasing the doping density below ${\sim}10^{17}cm^{-3}$, contrasted to shift to low energy and increasing FWHM above the density of ${\sim}10^{17}cm^{-3}$. From the variation of the integrated PL intensities of three peaks dissolved by Gaussian fit, it has been analyzed that, as the density increases, the $Be[Be_{Ga}]$ acceptor level (0.794 eV) reduces, whereas the intrinsic defect of $A[Ga_{Sb}]$ (0.778 eV) enhances together with a new $Be^*$ level (0.787 eV) locating between A and Be. We have discussed that it is due to coexistence of the Be acceptor level (${\Delta}E=16meV$) and the complex level (${\Delta}E=23meV$), $Be^*[Ga_{Sb}-Be_{Ga}]$combined by Be and A, in Be-doped p-GaSb, and that the level density of $Be[Be_{Ga}]$ may be reduced above ${\sim}10^{17}cm^{-3}$.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.35 no.6
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• pp.545-550
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• 2002

A hemolysin producing bacterial strain which belong to Vibrio species was isolated from the Kum River estuary. In the process of identification, the strain did not show characteristics of known Vibrio species; thus, the strain was designated as Vibrio sp, E10 (V. kunsan) tentatively and further identification study was carried out by comparing its bacteriological characteristics. Morphologically Vibrio sp, E10 was comma shaped rod with a polar flagellium. Clear hemolysis zones were observed with the strain against human and sheep blood agar. Hemollytic toxicity was confirmed by strong vascular Permeability and fatal toxicity against mouse was also observed. Therefore the strain was a pathogenic vibrio. Growth conditions for Vibrio sp. E10 were ranged salinity of 0$\~$$4.5\%$, pH of 6.2$\~$9.2, temperature of 14$\~$42$^{\circ}C$, respectively, 16S rDNA partial sequence of Vibrio sp, E10 showed $99\%$ homology with dozens of V. cholerae species including V, cholerae El Tor N16961 and V, snmisnfus ATCC 33653T. This strain belonged to Proteobacteria; gamma subdivision; Vibrionacea: Vibrio. But, among knorn Vibrio species no identical styains were found when using automatic bacteria identification system ($MicroLog^{TM}$system, release 4.0, Biolog Inc., USA) which evaluated the ability of metabolizing 95 kinds of carbon and nitrogen sources. Vibrio sp, E10 showed 18 and 11 different responses as compared to V. mimicus and V, cholerae, respectively.