• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.327-334
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• 2013

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.802-807
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• 1995

The electrochromic properties of vacuum deposited V$_2$O$_{5}$ thin films as a function of crystallinity and film thickness have been systematically investigated. The as-deposited films have slightly yellow appearance. V$_2$O$_{5}$ films deposited at higher substrate temperature(>14$0^{\circ}C$) are found to be crystalline while those deposited at low substrate temperature are amorphous. The optical modulation on lithium ion injection indicates that V$_2$O$_{5}$ films exhibit anodic coloration in the 300~500 nm wavelength range and cathodic coloration in the 500~1100nm wavelength range independent of crystallinity and film thickness. The optical band gap energy of crystalline and amorphous Li$_{x}$ VV$_2$O$_{5}$ films shifts to higher energies by 0.17 eV and 0.75 eV, respectively, with increasing lithium ion injection up to x=0.6. The coloration efficiency of amorphous Li$_{x}$ V$_2$O$_{5}$ exhibits very little dependence on film thickness and lithium ion injection amounts in the near-infrared while it increases significantly with increasing film thickness and decreasing lithium ion injection amounts in the blue and near-UV due to the shift in absorption edge below around 500nm. However, the coloration efficiency of crystalline Li$_{x}$ V$_2$O$_{5}$is relatively independent of film thickness and lithium ion injection in the 300~1100 nm wavelength range.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.97-102
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• 2005

NO adsorption can be used in synthesizing oxynitride thin films which have potential application in nanodevices. However, it is very difficult to understand the oxynitridation Process since too many factors are involved in it. In this paper, we present our first-principles molecular dynamics calculation of the NO molecule adsorption on the Si(001) surface as the initial stage of the oxynitridation process. The previous first-principles calculation has argued the NO molecule is dissociated with a very small activation barrier, 0.07eV, which acutally corresponds to 1.60eV considering thermodynamics. This is in clear contrast to the observation that NO is dissociated at temperatures as low as 20K From extensive searches of NO on the Si(001) surface, we have found the new dissociation processes that have the much lower activation energies, less than 0.01 eV. We also present the dissociation and penetration processes with the corresponding activation energies and discuss their experimental implications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2892-2898
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• 2015

We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.173-178
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• 1998

$MgB_4O_7$: Tb, Tm, Dy, La, Ho and Nd phosphors have been prepared by sintering around $580^{\circ}C$ for 2 hours followed by flowing Ar gas. Activation energy and kinetic order of main peak of glow curve were studied by two methods peak shape method and initial rise method. By these methods, the estimated activation energies were $0.76\pm0.02eV$(Tb doped), $0.94\pm0.03eV$(Tm doped), $0.72\pm0.02eV$(Dy doped), respectively. The TL phosphors prepared in this work may be utilized to radiation sensor elements becaue of their high sensitivity to low energy X-ray.

• Korean Journal of Oriental Medicine
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• v.1 no.1
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• pp.1-14
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• 1995

The clinical study was carried out on 1737 cases of inpatient and outpatient which have been diagnosed as C.V.A at hospital attached to 8 colleges of oriental medicine in Korea or National Medical Center from January 1st 1994 to December 31st 1994. The results were as follows; 1. In this study, the case of Occlusive C.V.D was 70.1%, Cerebral hemorrhage was 20.5%, Transient ischemic attack (T.I.A) was 5.3%, Subdural hemorrhage was 3.0%, Subarachnoid hemorrhage was 0.8% 2. It was confirmed by C.T (20%), E.K.G. (19%), X-ray (19%), Urinalysis (19%), Hematoscopy (20%). 3. The mean days of hospital treatment was 27.88 days, mean days of ambulation was 70.34 days. The mean days of hospital treatment of Occlusive C.V.D, Cerebral hemorrhage, T.I.A., Subdural hemorrhage, Subarachnoid hemorrhage were 25.79, 39.32, 12.49, 16.23, 23.40 days, respectively. The mean days of ambulation of Occlusive C.V.D, Cerbral hemorrhage, T.I.A., Subdural hemorrhage, Subarachnoid hemorrhage were 74.40, 93.68, 69.10, 29.75, 32.57 days, respectavely. 4. Oriental medical treatment of C.V.A was mainly Acupuncture (25%), Paper of Chinese herbs (22%), Chinese physiotherapy (14%), Extract of Chinese herbs (11%). 5. Oriental medical physiotherapy for C.V.A was mostly E.S.T., Kinesiatrics, electric negative therapy, others Aerohydrotherapy, interferential current therapy (I.C.T.), Carbon, Samhogi, T.E.N.S., Ultra-sound, Infra-red, Microwave, T.D.P., Ultraviolet, S.S.P., Chinese herbs beth, Prarffin bath, Magnetic treatment and tractions.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.48-58
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• 1997

[ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.513-516
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• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• The Journal of Engineering Geology
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• v.18 no.4
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• pp.371-379
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• 2008

In this study, seismic elastic wave and dynamic elastic modulus properties are investigated by down-hole seismic tests that were applied to the 11 gneiss area. The research results show that the realtionship between the two properties are $V_s=0.5589{\times}V_p$ in gneiss. The relationship between the two properties are separated into two groups. Group 1 is influenced mainly by the specific gravity of rock, but group 2 is influenced mainly by the joint aperture. As weathering progresses, group 1 clearly shows a decreasing tendency. In fresh and slightly weathered rock-mass, correlations between $V_p$ and dynamic elastic modulus is expressed in linear line but in moderately-highly weathered rock-mass, correlations between $V_p$ and dynamic elastic modulus is expressed curve as a quadratic function. Correlations between $V_s$ and dynamic elastic modulus are analyzed similar with a $V_p$ case.

• Journal of the Korean Chemical Society
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• v.33 no.1
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• pp.55-64
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• 1989

Reduction and equilibrium of vanadium-DTPA (DTPA = diethylenetriaminepentaacetic acid, $H_5A$) complexes at mercury electrodes are studied in 0.5M $NaClO_4$ aqueous solution at 3.2 < pH < 10.5 and 25$^{\circ}$C. At 3.2 < pH < 5.9, the reduction reaction is $V{\cdot}A^{2-}+H^-+e^-=V{\cdot}HA^{2-}$, while at 5.9 < pH < 10.5 it is $V{\cdot}A^{2-}+H^-+e^-=V{\cdot}A^{3-}$. The stability constants of $V{\cdot}HA^{2-}$ and $V{\cdot}A^{3-}$ are found to be $6.46{\times}10^{9}$ and $3.09{\times}10^{14}$, respectively. V(IV)-DTPA undergoes stepwise complexation as $VO^{2+}+H_2A^{3-}=VO{\cdot}HA^{2+}H^{+}$ and $VO{\cdot}HA^{2-}=VO{\cdot}A^{3+}+H$, where acidity constant of $VO{\cdot}HA^{2-}$- is pKa = 7.15. Stability constants of $VO{\cdot}HA^{2-}$ and $VO{\cdot}A^{3-}$ are found to be $1.41{\times}10^{14}$ and $3.80{\times}10^{17}$, respectively. It is detected that $VO^{2+}-DATA$ is reduced irreversibly to $VO^{2-}$ with the transfer coefficient of $\alpha$ = 0.43. At more cathodic overpotential, the reduction is stepwise as V(IV)${\to}$V(III)${\to}$V(II). The first one corresponds to $VO{\cdot}HA^{2-}+e^{-}{\to}VO{\cdot}HA{3+}$ at 3.2 < pH < 7.2 and $VO{\cdot}A^{3-}+e^{-}{\to}VO{\cdot}A^{4-}$ at 7.2 < pH < 10.5. The second is identical to that of V(III). Diffusion coefficients of $VO{\cdot}HA^{2-}$ and $VO{\cdot}A^{3-}$ are found to be $(9.0{\pm}0.3){\times}10^{-6}cm^2/s$ and $(5.9{\pm}0.4){\times}10^{-6}cm^2/ses$, respectively.