• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.335-342
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• 2012

A high-isolation Ka-band WR-28 waveguide power combiner is designed and implemented using a resistive septum. The waveguide power combiner developed here is an E-plane T-junction type with a TaN resistive septum inserted in a slit of waveguide junction. The fabricated waveguide power combiner shows a return loss better than -20 dB and an insertion loss less than 0.1 dB. Also the measurement shows isolation levels of 20 dB or more almost all over the band and in particular 25 dB or more below 37 GHz. The amplitude and phase imbalance are measured to be less than 0.1 dB and $2.5^{\circ}$, respectively.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2007.04a
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• pp.440-443
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• 2007

In this paper, microstrip antenna is designed for industrial-scientific-medical(ISM)band of S-Band. We proposed that radiation element of antenna, which is rectangle patch shape. The feeding structure used L-shaped structure. Center frequency and -l0dB bandwidth are investigated by change of length and width in patch plane. And maximum gain, front to back ratio and 3dB beam width is presented by simulation radiation pattern of antenna in frequency ISM Band. The center frequency is 2.45GHz, band width is $2.314{\sim}2.577GHz$ with 263MHz(11%). And the antenna maximum gain is 9.3dBi, 3dB beam width E-plane is $52.5^{\circ}$, H-plane is $64.7^{\circ}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.03a
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• pp.365-372
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• 1999

The plane deformation and spatial seepage(PDSS) analysis was developed to consider 3D flow of excess pore water as well as plane deformation of ground. Here is newly developed an equivalent model for PDSS analysis, which was the purpose to reduce number of finite elements and to take the effects of smear and well resistance into consideration. As the result of PDSS analysis with applying the new model, it is showed that the settlement-tin e relationship by PDSS agrees well with those of Plane strain(PS) and axisymmetric analyses, irrespective of existence of untreated layer. And the excess pore pressure distribution by PDSS is relatively agreed with that of axisymmetric analysis, not with that of PS.

• Communications of the Korean Mathematical Society
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• v.35 no.1
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• pp.201-215
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• 2020

In this paper, a boundary version of Carathéodory's inequality on the right half plane for p-valent is investigated. Let Z(s) = 1+c_p (s - 1)^p +c_p+1 (s - 1)^p+1 +⋯ be an analytic function in the right half plane with ℜZ(s) ≤ A (A > 1) for ℜs ≥ 0. We derive inequalities for the modulus of Z(s) function, |Z'(0)|, by assuming the Z(s) function is also analytic at the boundary point s = 0 on the imaginary axis and finally, the sharpness of these inequalities is proved.

• Research in Mathematical Education
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• v.20 no.1
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• pp.39-49
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• 2016

The History of Mathematics (HOM) was integrated in teaching the Cartesian Coordinate Plane (CCP) to Grade Seven learners of Moonwalk National High School using Lesson Study. After the lesson was taught, there were three valuable issues emerged: (1) HOM is a Springboard and/or a Medium of Motivation in Teaching CCP; (2) The History of CCP Opened a Wider Perspective about Its Real-life Application in the Modern World (3) Integration of History Developed a Sense of Purpose and an Appreciation of Mathematics Among Learners. Feedbacks solicited from the learners showed that they have understanding of the importance of studying Mathematics after they learned the life and contributions of Rene Descartes to Mathematics. Hence, integration of history plays a vital role in developing positive attitudes among learners towards Math.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.623-628
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• 2000

Since the influence coefficients method in balancing of rotors is developed with the basement of not the principle of rotor system dynamics, but the linear relationshop of between the measuring quantities and the unbalance quantities, field engineers can apply the method without additional understanding on the rotor dynamics. But the influence coefficients method is not robust to the measurement error. This paper proposes a new method for the two plane balancing of rigid rotor, based on the principle of rotor dynamics. And the kit for experiment is made by ourselves, and in order to measure in the same condition with it, we do a experiment three times. And then with the Response of gap sensor, the SNR(Signal and Noise) is compared and analyzed about measuring error between the influence coefficient method, and the new method, and it is proved that the new method is less robust than the influence coefficient method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.1
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• pp.17-22
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• 1983

Scattering of obliquely incident plane electromagnetic waves by an isotropic plasma coumn which is moving uniformly in the perpendicular direction to its axis is treated analytically on the basis of Lorentz transform and boundary conditions. The scattered field, the total scattering cross-section, the rader cross-section, and the angular distribution of the scattered power for the incident plane waves polarized arbitrarily are derived to find the function of the moving velocity of the plasma column and of the angle of the incident plane waves and to find the scattered field of the H-waves more distinguishable than the E-waves.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.5
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• pp.678-685
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• 1999

A UBET program is developed for determining flash the optimum sizes of preform and initial billet in plane-strain closed-die forging. The program consists of forward and backward tracing processes. In the forward program, flash, die filling and forging load are predicted. In backward tracing process the optimum dimensions of initial billet and preform are determined from the final-shape data based on flash design. Experiments are carried out with pure plasticine billets ar room temperature. The theoretical predictions of forging load and flow pattern are in good agree-ment with the experimental results.