• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.390-396
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• 1998

Neutral stream was generated from Helicon plasma source and was applied to etch silicon for the purpose of preventing physical and electrical damages from the bombardment of charged particles with high translation energy. By installing a permanent magnet and applying positive bias beneath the substrate, the cusp-magnetic and electric fiddles were generated in order to remove the charged particles from the downstream plasma. As a result, the electron density and ion density in the vicinity of the substrate were reduced by 1/1000 and 1/10, respectively. The directional etching of silicon was observed and the etch rate was found to be very low to below 100 $\AA$/min at a pressure of $8.5{\times}10^{-4}$ Torr, when $Cl_2$ and 10% $SF_{sigma}$ etchant gases were used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.30-37
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.157-161
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• 2012

In this study, we investigated the etching characteristics of ITO thin films and the effects of inert gases added to $Cl_2/BCl_3$ inductivity coupled plasma. The maximum etch rate of ITO thin film was 130.0 nm/min upon the addition of Ar (6 sccm) to the $Cl_2/BCl_3$ (4:16 sccm) plasma, which was higher than that with He or $N_2$ added to the plasma. The ion bombardment by $Ar^+$ sputtering was due to the relatively low volatility of the by-products formed in the $Cl_2/BCl_3$ (4:16 sccm) plasma. The surface of the etched ITO thin film was characterized by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). From the XPS results, it is concluded that the proper addition of Ar and He to the $Cl_2/BCl_3$ plasma removes carbon and by-products from the surface of the etched ITO thin film.

• Journal of Convergence for Information Technology
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• v.8 no.6
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• pp.43-48
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• 2018

An etchant capable of forming a circuit in an FTO film that can replace ITO, which depends on full imports, was prepared. The etching solution is composed of 1 to 30% by weight of fluoride, 1 to 20% by weight of acid, 0.5 to 5% by weight of surfactant, 5 to 20% by weight of solvent, 0.5 to 10% by weight of corrosion inhibitor and the balance of water. This etchant can be etched using a dry film, thereby reducing the cost, and is free from bubbles and residue of the etchant. The characteristics of the etchant were etched in a time of 2 minute with a 100 nm thick FTO, and the etchant temperature was maintained at $50^{\circ}C$. An undercut of -0.00364% was obtained when put into a 2 minute etching solution. No harmful substances such as Cd, Pb, Hg and Cr components were measured. The use of FTO in Korea where rare earths do not exist can achieve localization and import substitution effect.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.421-426
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• 2009

We report on the capacitively coupled O2 plasma etching of PMMA and polycarbonate (PC) with a diffusion pump. Plasma process variables were process pressure and CCP power at 5 sccm $O_2$ gas flow rate. Characterization was done in order to analyze etch rate, etch selectivity, surface roughness, and morphology using stylus surface profilometry and scanning electron microscopy. Self bias decreased with increase of process pressure in the range of 25$\sim$180 mTorr. We found an important result for optimum pressure for the highest etch rate of PMMA and PC, which was 60 mTorr. PMMA and PC had etch rates of 0.46 and 0.28 ${\mu}m$/min under pressure conditions, respectively. More specifically, etch rates of the materials increased when the pressure changed from 25 mTorr to 60 mTorr. However, they reduced when the pressure increased further after 60 mTorr. RMS roughnesses of the etched surfaces were in the range of 2.2$\sim$2.9 nm. Etch selectivity of PMMA to a photoresist was $\sim$1.5:1 and that of PC was $\sim$0.9:1. Etch rate constant was about 0.04 ${\mu}m$/minW and 0.02 ${\mu}m$/minW for PMMA and PC, respectively, with the CCP power change at 5 sccm $O_2$ and 40 mTorr process pressure. PC had more erosion on the etched sidewall than PMMA did. The OES data showed that the intensity of the oxygen atomic peak (777.196 nm) proportionally increased with the CCP power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.131-138
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• 2024

In this study, the microstructure and plasma resistance characteristics of 35Bi₂O₃-15Al₂O₃-50SiO₂ (BiAl SiO) and 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃ (BiAlSiOF) glass layers coated on sintered alumina substrates were investigated according to the sintering conditions. The coated layers were formed using the bar coating method and then sintered at a temperature in the range of 700~900℃, which corresponds to the temperature before and after the hemisphere forming temperature, after a debinding process. The plasma resistance of the two coated glasses was approximately 2~3 times higher than that of the quartz glass, and in particular, the BiAlSiOF glass film with F added showed higher plasma resistance than BiAlSiO. It is thought to be due to the effect of suppressing the reaction with fluorine gas by adding fluorine to the glass. When the sintering time was increased at 700℃ and 800℃, the plasma resistance of both glasses improved, but when the sintering temperature was increased to 900℃, the plasma resistance decreased again (i.e., the etching rate increased). This phenomenon is thought to be related to the crystallization behavior of both glasses. The change in plasma resistance depending on the sintering conditions is thought to be related to the appearance of Al and Bi-rich phases.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.158-162
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• 2006

Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).