• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.1-6
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• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1272-1275
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• 2008

We present the development of dry etch process for the liquid crystal display (LCD) fabrication using a dielectric barrier discharge (DBD) system at atmospheric pressure. In this experimental work, the dry etch characteristics and the electrical properties of thin film transistor are evaluated by using the scanning electron microscopy and electric probe, and TFT-LCD panel ($300\;mm\;{\times}\;400\;mm$) is manufactured with the application of the amorphous silicon etch step in the 4 mask and 5 mask processes.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.573-578
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• 2004

Newly developed silicide materials for ULSI should have the appropriate electrical property of low resistant as well as process compatibility in conventional CMOS process. We prepared $NiCoSi_x$ silicides from 15 nm-Co/15 nm-Ni/Si structure and performed contact dry etch process to confirm the dry etch stability and compatibility of $NiCoSi_x$ layers. We dry etched the photoresist/SiO/silicide/silicon patterns with $CF_4\;and\;CHF_3$ gases with varying powers from 100 to 200 W, and pressures from 45 to 65 mTorr, respectively. Polysilicon and silicon active layers without silicide were etched $0\sim316{\AA}$ during over etch time of 3min, while silicon layers with proposed $NiCoSi_x$ silicide were not etched and showed stable surfaces. Our result implies that new $NiCoSi_x$ silicides may replace the conventional silicides due to contact etch process compatibility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.83-83
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• 2009

We studied about the effect of newly developed etchant for spacer etch process in gate patterning. With the 110nm CMOS technology, first, we changed the gate pattern size and investigated the variation of spacer etch profile according to the difference in gate length. Second, thickness of spacer nitride was changed and effect of etch ant on difference in nitride thickness was observed. In addition to these, spacer etch power was added as test item for variation of etch profile. We investigated the etch profiles with SEM and TEM analysis was used for plasma damage check. With these results we could check the process margins for gate patterning which could hold best performance and choose the condition for best spacer etch profile.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.309-311
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• 2003

The effects of etch parameters on dry etching of BLT thin films were investigated with ICP etch system in $Cl_2$/Ar and $BCl_2/Cl_2$/Ar gas. The etch rate and etch selectivity of BLT films were examined as a function of gas concentration, ICP power, bias power, and pressure. The maximum etch rates of 191.1 nm/min was obtained at the mixed etch condition of $BCl_3(20%)/Cl_2$/Ar, 700 W ICP RF power, 12 mTorr pressure and 400 W substrate RF power. As ICP power and rf power increased, the etch rate of BLT increased. As pressure increased, the etch rate of BLT decreased. The changes of radicals in both $Cl_2$/Ar and $BCl_3/Cl_2$/Ar plasma were measured with using optical emission spectroscopy (OES).

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.162-171
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• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.570-575
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• 2002

The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$\_$6/:C$_4$F$\_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe