Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application |
최기용
(한국과학기술연구원 마이크로시스템연구센터)
최덕균 (한양대학교 세라믹공학과) 박지연 (한국원자력연구소) 김태송 (한국과학기술연구원 마이크로시스템연구센터) |
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Silicon Carbide and related Materials, International Physics Conference
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Reactive ion etching of sic thin films using fluorinated gases
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DOI ScienceOn |
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Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma
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DOI ScienceOn |
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A review of SiC reactive ion etching in fluorinated plasmas
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DOI ScienceOn |
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Shigehiro Nishino, "Si(100)기판 위에 성장된 3C-SiC 박막의 물리적 특성
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과학기술학회마을 |
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High rate etching of 4H-SiC using a <TEX>$SF_6$</TEX>/O₂helicon plasma
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DOI ScienceOn |
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Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms
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DOI ScienceOn |
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Silicon carbide as a new MEMS technology
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DOI ScienceOn |
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SiC MEMS : opportunities and challenges for applications in harsh enviromments
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DOI ScienceOn |
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실리콘 카바이드 박막제조를 위한 증착 반응연구
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과학기술학회마을 |
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RF performance of SiC MESFET's on high resistivity substrates
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