• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.423-424
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• 2011

This paper has proposed a 920 MHz RF front-end for IEEE 802.15.4g SUN (Smart Utility Network) systems. The proposed 920 MHz RF front-end consists of a driver amplifier, a low noise amplifier, and a RF switch. In the TX mode, the driver amplifier has been designed as a single-ended topology to remove a transformer which causes a loss of the output power from the driver amplifier. In addition, a RF switch is located in the RX path not the TX path. In the RX mode, the proposed low noise amplifier can provide a differential output signal when a single-ended input signal has been applied to. A LC resonant circuit is used as both a load of the drive amplifier and a input matching circuit of the low noise amplifier, reducing the chip area. The proposed 920 MHz RF Front-end has been implemented in a 0.18-um CMOS technology. It consumes 3.6 mA in driver amplifier and 3.1 mA in low noise amplifier from a 1.8 V supply voltage.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.72-77
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• 2013

The effect of sputtering condition on the structural properties of ZnO thin films grown by RF magnetron sputtering system was investigated for TFT driver circuit. ZnO thin films were grown with ZnO target varying RF power and working pressure. Structural properties were investigated by X-ray diffraction (XRD) and atomic force microscope (AFM). The ZnO thin films have sufficient crystallinity on the 100W RF power. But, the surface roughness of ZnO films was increased as increased RF power. As increased working pressure from 5 mTorr to 15 mTorr, a full width at half maximum (FWHM) of ZnO (002) peak was increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.293-296
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• 2002

This paper proposes new driving methods for designing a driver independent of the current property of organic light emitting diodes (OLED) displays. The proposed methods are the Look-Up Table (LUT) and the Pulse Width Modulation (PWM). The LUT is used to handle the amount of the current for driving the OLED display panel and the PWM is applied to represent the gray scale on the OLED display panel. Segment and common drivers were implemented using delay circuits to prevent short-circuit current and a DC-DC converter was designed to supply the drivers with a power source. In particular, tile proposed methods are used for the manufacturing of 1.8" 128$\times$128 dot passive matrix OLED display panel. The designed circuit was fabricated using 0.6w, 2-poly, 3-metal, CMOS process and applied to the Personal Communication System (PCS) phone successfully.ully.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.167-173
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• 2005

The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.728-735
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• 2016

A 70 MHz temperature-compensated on-chip CMOS relaxation oscillator for mobile display driver ICs is proposed to reduce frequency variations. The proposed oscillator compensates for frequency variation with respect to temperature by adjusting the bias currents to control the change in delay of comparators with temperature. A bandgap reference (BGR) is used to stabilize the bias currents with respect to temperature and supply voltages. Additional temperature compensation for the generated frequency is achieved by optimizing the resistance in the BGR after measuring the output frequency. In addition, a trimming circuit is implemented to reduce frequency variation with respect to process. The proposed relaxation oscillator is fabricated using 45 nm CMOS technology and occupies an active area of $0.15mm^2$. The measured frequency variations with respect to temperature and supply voltages are as follows: (i) ${\pm}0.23%$ for changes in temperature from -30 to $75^{\circ}C$, (ii) ${\pm}0.14%$ for changes in $V_{DD1}$ from 2.2 to 2.8 V, and (iii) ${\pm}1.88%$ for changes in $V_{DD2}$ from 1.05 to 1.15 V.

• Journal of Power Electronics
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• v.16 no.2
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• Journal of Power Electronics
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• v.11 no.1
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• pp.97-104
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• 2011

This paper proposes a new alternating current driving method for highly capacitive loads such as plasma display panels or piezoelectric actuators, etc. In the proposed scheme, a current balance transformer, which has two windings with the same turn-ratio, provides not only a resonance inductance for energy recovery but also a current balance among all of the switching devices of the driver for current stress reduction. The smaller conduction loss than conventional circuits occurs due to the dual conduction paths which are parallel each other in the current balance transformer. Also, the leakage inductances of the transformer are utilized as resonant inductors for energy recovery by the series resonance to the capacitive load. Furthermore, the resonance contributes to the small switching losses of the switching devices by soft-switching operation. To confirm the validity of the proposed circuit, prototype hardware with a 12-inch mercury-free flat fluorescent lamp is implemented. The experimental results are compared with a conventional energy-recovery circuit from the perspective of luminance performances.

• Journal of Information Display
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• v.3 no.2
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• pp.1-5
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• 2002

A CMOS driving circuit for active matrix type polymer electroluminescent displays was designed to develop an on-chip microdisplay on the single crystal silicon wafer substrate. The driving circuit is a conventional structure that is composed of the row, column and pixel driving parts. 256 gray scales were implemented using pulse amplitude modulation method. The 2-transistor driving scheme was adopted for the pixel driving part. The layout was carried out considering the compatibility with the standard CMOS process. Judging from the layout of the driving circuit, it turns that it is possible to implement a high-resolution display about 400 ppi resolution. Through the HSPICE simulation, it was verified that this circuit is capable of driving a VGA signal mode display and implementing 256 gray levels.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.161-165
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• 2023

This paper designed a voltage feedback driving circuit to compensate for the characteristic deviation of the Active Matrix Organic Light Emitting Diode driving Thin Film Transistor. This paper describes a stable and fast circuit by applying charge sharing and polar stabilization methods. A 12-inch Organic Light Emitting Diode with a Double Wide Ultra eXtended Graphics Array resolution creates a screen distortion problem for line parasitism, and charge sharing and polar stabilization structures were applied to solve the problem. By applying Charge Sharing, all data lines are shorted at the same time and quickly positioned as the average voltage to advance the compensated change time of the gate voltage in the next operation period. A buffer circuit and a current pass circuit were added to lower the Amplifier resistance connected to the line as a polar stabilization method. The advantage of suppressing the Ringing of the driving Thin Film Transistor can be obtained by increasing the stability. As a result, a circuit was designed to supply a stable current to the Organic Light Emitting Diode even if the characteristic deviation of the driving Thin Film Transistor occurs.