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A PIN Diode Switch with High Isolation and High Switching Speed  

Ju Inkwon (Communications Satellite Development Group, ETRI)
Yom In-Bok (Communications Satellite Development Group, ETRI)
Park Jong-Heung (Communications Satellite Development Group, ETRI)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.16, no.2, 2005 , pp. 167-173 More about this Journal
Abstract
The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.
Keywords
Microwave Switches; PIN Diodes; Microwave Integrated Circuits; Isolation;
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  • Reference
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