• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.255-256
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• 2006

This paper presents the performance improvement of a Nozzle/Ball type servovalve with variant drain orifice. First of all, the configuration of the novel servovalve is proposed. Then, the static characteristics are investigated under blocked load condition, and its dynamic characteristics are analyzed by using the linearized flow-pressure relationship. Finally, the performance at the null condition of the proposed servovalve is numerically evaluated through the comparison study with the convention at counterparts.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.180-183
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• 2006

We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.

• Journal of Advanced Marine Engineering and Technology
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• 제26권6호
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• pp.688-694
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• 2002

Several methods were developed for on-line measuring oil consumption in gasoline engine using an oil consumption meter. The oil consumption meter indicates the oil quantity by real-time-measuring the oil level in the sump. In order to measure the oil consumption, the oil consumption meter proposed in this paper requires shorter time, less additional procedures, and shows better results than the traditional drain method. Under steady-state engine-operating conditions, the results obtained through the regression or the difference method show an good agreement with those through the drain method. Under transient engine-operating conditions, on the other hand, good results can be obtained through the reference method.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• Advances in nano research
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• 제15권3호
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• pp.263-275
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• 2023

The electron transport properties of Y-type zigzag branched carbon nanotubes (CNTs) are of great significance for micro and nano carbon-based electronic devices and their interconnection. Based on the semi-empirical method combining tight-binding density functional theory and non-equilibrium Green's function, the electron transport properties between the branches of Y-type zigzag branched CNT are studied. The results show that the drain-source current of semiconducting Y-type zigzag branched CNT (8, 0)-(4, 0)-(4, 0) is cut-off and not affected by the gate voltage in a bias voltage range [-0.5 V, 0.5 V]. The current presents a nonlinear change in a bias voltage range [-1.5 V, -0.5 V] and [0.5 V, 1.5 V]. The tangent slope of the current-voltage curve can be changed by the gate voltage to realize the regulation of the current. The regulation effect under negative bias voltage is more significant. For the larger diameter semiconducting Y-type zigzag branched CNT (10, 0)-(5, 0)-(5, 0), only the value of drain-source current increases due to the larger diameter. For metallic Y-type zigzag branched CNT (12, 0)-(6, 0)-(6, 0), the drain-source current presents a linear change in a bias voltage range [-1.5 V, 1.5 V] and is symmetrical about (0, 0). The slope of current-voltage line can be changed by the gate voltage to realize the regulation of the current. For three kinds of Y-type zigzag branched CNT with different diameters and different conductivity, the current-voltage curve trend changes from decline to rise when the branch of drain-source is exchanged. The current regulation effect of semiconducting Y-type zigzag branched CNT under negative bias voltage is also more significant.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1370-1371
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latchup problem during normal operation. However, a modified NEDSCR device with proper junction / channel engineering demonstrates itself with both the excellent ESD protection performance and the high latchup immunity.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2005년도 추계학술대회논문집
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• pp.345-348
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• 2005

The method of measurement for field tests on noise emission from water closet in bathroom of apartment house. This part of standard gives detailed descriptions for field tests on noise emission from water closet in bathroom. The measuring position have to investigated measuring for emission noise.

• Journal of electromagnetic engineering and science
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• 제10권1호
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• pp.6-12
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• 2010

In this paper, highly efficient class-F power amplifiers(PAs) with harmonic-controlling transmission lines(TLs) were built for cellular and WLAN applications at 840 MHz and 2.4 GHz each. Also, based on these single-band PAs, a dualband class-F PA was designed after a careful investigation into the harmonics of the two frequencies. The harmonic-controlling TL was designed for the class-F operation at dualband by switching the length of the shunt $\lambda$/4 TL part, while the series $\lambda$/4 TL is optimized for both frequencies. To verify the performance, two class-F PAs optimized at each frequency and a dualband class-F PA at the corresponding frequencies were built with the secondand the third-harmonic control circuits at each frequencies. As a result, the PA#1 at 840 MHz has a peak drain efficiency of 81.2 % with an output power of 24.4 dBm, while the PA#2 at 2.35 GHz shows a drain efficiency of 94.5 % with an output of 22.8 dBm. Finally, the dualband class-F PA#3 showed 60.5 % and 50.9 % drain efficiencies at 840 MHz and 2.4 GHz, with powers of 23.8 dBm and 19.62 dBm, respectively.

• 한국가시화정보학회지
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• 제20권3호
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• pp.102-108
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• 2022

In the fan module of the intercooling refrigerator, a drain hole structure was designed for stable drainage of defrost water. However, the airflow passing through the drain hole can disturb flow features around the evaporator. Since this backflow leads to an increase in flow loss, the accurate experimental and numerical analyses are important to understand the flow characteristics around the fan module. Considering the complex geometry around the fan module, three different turbulence models (Standard k-ε model, SST k-ω model, Reynolds stress model) were used in computational fluid dynamics (CFD) analysis. According to the quantitative and qualitative comparison results, the Standard k-ε model was most suitable for the research object. High-accuracy results well match with the experiment result and overcome the limitation of the experiment setup. The method used in this study can be applied to a similar research object with an orifice outflow driven by a rotating blade.