• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.793-798
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• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Geotechnical Engineering
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• v.1 no.2
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• pp.17-26
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• 1985

This study was carried out for the purpose of comparing in reference to sand drain in the next three different cases. First, The case of drain material (sand pile) has some rigidity during embankment and consolidation. Second, In usual case of no rigidity as a paper drain without permeability during embankment and consolidation Third, Check up clay behavior when above the two cases carried out respectively. This FEM analysis is consisted with Biot's consolidation equation when it is used for Christian Boehmer's numerical technique. The main results are obtained from above the Analysis When sand drain has some rigidity, the lateral and vertical deformation of clay foundation is restrained considerable amount and .exhibited bearing capacity of load as a pile According to the foundation in drained condition and untrained condition, the results are much variable in this analysis method. Also, The behaviors of stress path and pore water pressure met our expectation during , consolidation. This analysis should be considered to put into use of sand drain and design in future.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.10a
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• pp.87-94
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• 1999

Sand drain as a vertical drainage is widely used in soft ground improvement. Recently, sand, the principal source of sand drain, is running out. A laboratory model test was carried out to utilize gravel as a substitute for sand. Though which the characteristics of gravel are compared to those of sand for engineering purpose. Two cylindrical containers for the model test were filled with marine clayey soil from the west coast of Korea with a column in the center, one with sand, the other with gravel. Vibrating wire type piezometers were installed at the distance of 1.0D, 1.5D and 2.0D from the center of the column. D is the diameter of the column. The transient process of pore water pressure with loading and the characteristics of consolidation were studied with the data gained from the measuring instrument place on the surface of the container. The parameter study was performed for the marine clayey soil before and after the test in order to check the effectiveness of the improvement. The clogging effect was checked at various depth in gravel column after the test. According to the test, the settlement was found to be smaller in gravel drain than in sand drain. The increase in bearing capacity by gravel pile explains the result. The clogging effect was not found in gravel column. As a result, it is assumed that gravel is relatively acceptable as a drainage material.

• Journal of Industrial Technology
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• v.23 no.A
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• pp.109-118
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• 2003

This paper is results of numerical works of investigating effects of horizontal drain arrangements on vacuum consolidation. Extensive numerical analyses were carried out to find the appropriate arrangements of horizontal drain of vacuum consolidation. Commercially available program of CRISP, well known to be good to modelling the behavior of clay material, was used Cam-clay model, based on the Critical State of Soil Mechanics(CSSM), was used to simulate the geotechnical engineering behavior of clay. Model test results carried out previously in the laboratory were compared with numerically estimated results and it was found that results about consolidational settlement with times were in good agreements. Based on this confirmation, parametric numerical study was performed to investigate effects of horizontal drain arrangements on vacuum consolidation with changing the vertical and horizontal spacings between drains for the given soil properties and vacuum. The effect of distance of drain located in top layer from the surface of the ground on the settlement due to vacuum was also investigated. As a results of numerical analyses, appropriate arrangements of horizontal drain to maximize the consolidation settlement due to vacuum were found. The mechanism of vacuum consolidation about the vacuum pressures being transferred to the effective stresses around drains was also evaluated.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.679-682
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• 2007

This study aims to select the proper vocabularies for evaluation about the noise emission from water supply and drain installations in apartment bathroom. As a result of surveying overlapping vocabularies and scores of them for each sound sources, 'annoying', 'noisy', 'dynamic' and 'strident' are main unpleasant vocabularies to the noise from water supply and drain installations in apartment bathroom. And vocabularies such as 'dynamic', 'sudden', 'loudness', 'noisy' are classified into the first factor by analysis.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.50-59
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• 1999

The effect of a variant drain orifice damping on the characteristics of a servovalve flapper-nozzle stage is analyzed. Steady-state characteristics of flapper-nozzle stage and the linearized dynamics of flapper-nozzle assembly with a spool valve show that the variant drain orifice damping could improve such null performance characteristics as null pressure sensitivity and linearity of gain function. Generalized design criterion and a sufficient condition for servovalve stability are also established.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.87-91
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• 2013

Carbon-nanotube field-effect transistors (CNFETs) have drawn wide attention as one of the potential substitutes for metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. Output characteristics of coaxially gated CNFETs were simulated using FETToy simulator to reveal the dependence of drain current on the nanotube diameter and gate oxide thickness. Nanotube diameter and gate oxide thickness employed in the simulation were 1.5, 3, and 6 nm. Simulation results show that drain current becomes large as the diameter of nanotube increases or insulator thickness decreases, and nanotube diameter affects the drain current more than the insulator thickness. An equation relating drain saturation current with nanotube diameter and insulator thickness is also proposed.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.271-274
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• 2011

Screen-printed source and drain electrodes were used for a spin-coated and inkjet-processed zinc-tin oxide (ZTO) TFTs for the first time. Source and drain were silver nanoparticles. Channel length was patterned using screen printing technology. Different silver nanoinks and process parameters were tested to find optimal source and drain contacts Relatively good electrical properties of a screen-printed inkjet-processed oxide TFT were obtained as follows; a mobility of 1.20 $cm^2$/Vs, an on-off current ratio of $10^6$, a Vth of 5.4 V and a subthreshold swing of 1.5 V/dec.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1255-1259
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• 2013

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1872-1876
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• 2012

A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.