• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.132-138
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• 1997

Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

• Journal of The Korean Society of Agricultural Engineers
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• v.57 no.6
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• pp.69-77
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• 2015

The objective of this study was to evaluate the performance of selected sediment reduction methods to reduce sediment discharges from drain and irrigation of different types (concrete canals, soil canals). This study was carried out to analysis for the suspended sediment concentration and sediment of drain and irrigation by velocity of flow. The results of study were analysised and summerized as follow. Sedimentation characteristics and size of soil sediment from the concrete and soil canals of downstream smaller than upstream. Suspended sediment concentration and flow times from the suggestion canals bigger than open canal. Structural shape of the canal decreases the velocity of flow also affects the suspended sediment concentration and flow times.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.266-268
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• 2013

In this paper, we study the channel doping concentration characteristics of junctionless nanowire transistors (JLT) using Edison nanowire FET device simulation. JLT has no junctions by very simple fabrication process. And this device has less variability and better electrical properties than classical inversion-mode transistors with PN junctions at the source and drain. In this simulation we use tri-gate structure. Source and drain doping concentration is $10^{20}atoms/cm^3$. The simulation results show that I-V characteristics of JLT change due to the variation of channel doping concentration.

• Proceedings of the Korean Geotechical Society Conference
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• 2003.03a
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• pp.177-184
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• 2003

매립장 내의 설치된 중간 복토층(intermediate cover)은 매립 도중 혹은 매립완료 후 종종 침출수가 하부의 침출수 집배수관으로 이동하는 것을 막아 매립장 내에 일정 침출수위를 형성시킨다. 이렇듯 중간 복토층은 침출수의 원활한 순환을 막아 매립장 바닥에 형성되어야 하는 침출수위가 중간복토층 위에 형성되도록 하는데, 이는 매립장의 구조적 안정성을 깨뜨리고 주변으로 침출수 누출을 유발시키게 된다. 본 연구에서는 이처럼 중간복토층 상부에 형성된 침출수위를 저하시키기 위하여, 폐기물 매립시 중간복토층에 투수성이 뛰어나고 역학적 강도와 화학적 내구성을 갖는 배수파일(Drain Pile)을 설치할 것을 제안하였다. 배수파일은 중간복토층 상부에 형성될 수 있는 침출수를 매립장 바닥으로 배수시키고, 침출수 집배수정으로 이송이 가능하게 만든다. 또한 배수파일은 매립장 내부에 설치됨으로써 폐기물의 자체 강성을 증가시키고, 동시에 매립장의 측방유동을 막아 구조적 안정성을 확보하는 효과도 기대할 수 있다. 실내시험을 통해 배수파일 충진재로서 굴패각의 활용가능성을 확인한 결과, 산업 폐기물인 굴패각이 침출수의 pH를 중화시키고 유해물질인 NH$_{4}$$^{+}$를 제거하는데 효과적임을 확인할 수 있었다. 한편, 실제현장의 침출수흐름을 모사하기 위해 범용 프로그램(SEEP/W)을 이용하여 매립지 내에서 배수 파일의 효과를 확인하였다.

• International Journal of Fluid Machinery and Systems
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• v.4 no.4
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• pp.367-374
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• 2011

Water hammer pumps can effectively use the water hammer phenomenon in long-distance pipeline networks that include pumps and allow fluid transport without drive sources, such as electric motors. The results of experiments that examined the effect of the geometric form of water hammer pumps by considering their major dimensions have been reported. In addition, a paper has also been published analyzing the water hammer phenomenon numerically by using the characteristic curve method for comparison with experimental results. However, these conventional studies have not fully evaluated the pump performance in terms of pump head and flow rate, common measures indicating the performance of pumps. Therefore, as a first stage for the understanding of water hammer pump performance in comparison with the characteristics of typical turbo pumps, the previous paper experimentally examined how the hydrodynamic characteristics were affected by the inner diameter ratio of the drive and lifting pipes, the form of the air chamber, and the angle of the drive pipe. To understand the behavior of the components attached to the valve chamber and the air chamber that affects the performance of water hammer pumps, the previous study also determined the relationship between the water hammer pump performance and temporal changes in valve chamber and air chamber pressures according to the air chamber capacity. For the geometry of components attached to the drain valve, which is another major component of water hammer pumps, this study experimentally examines how the water hammer pump performance is affected by the length of the spring and the angle of the drain pipe.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.900-905
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• 2009

A common drain feedback CMOS wideband LNA with current bleeding and input inductive series-peaking techniques is presented in this paper. DC coupling is adopted between cascode and feedback amplifiers, so that the gain and NF of the LNA can be dynamically controlled by adjusting the bleeding current. The fabricated LNA shows the bandwidth of 2.5 GHz. The high gain mode shows 17.5 dB gain with $1.7{\sim}2.8\;dB$ NF and consumes 27 mW power and the low gain mode has 14 dB gain with $2.7{\sim}4.0\;dB$ NF and dissipates 1.8 mW from 1.8 V supply.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.43-47
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• 2013

In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.525-536
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• 2014

Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1600-1603
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• 2009

In this work, we have fabricated inverted staggered ZnO TFTs with 1-${\mu}m$ resolution channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro scale source/drain electrodes without etching is successfully achieved by micro contact printing method by using silver ink and polydimethylsiloxane (PDMS) stamp. And the time dependent characteristics of the sheet resistance show that Ag inklayer could be used as source and drain electrodes for ZnO TFTs.