• Journal of the Korean Society of Industry Convergence
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• v.7 no.1
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• pp.83-89
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• 2004

The analysis about consolidation characteristic in soft clay has been depending one-dimension consolidation analysis. but, drain and undrain zone are explicated as homogeneous by consolidation behavior following consoli- dated settlementsoft in soft clay. 1) Established sand drain in soft clay in many types, and measured water content, unconfined compression strength, vertical stress, horizontal stress, vertical settlement, pore water pressure. 2) Arranged the result from the test and numerically explicated effective stress, total stress, and effective stress path at the drain and undrain zone. 3) We also analyzed and comparied elastic and elastic-plastic in soft clay using measured data. The result analyzed does not approach to a special theory, but, it is well in accord with the result of other investigator's study in the same condition.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.1136-1143
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• 2008

The Vertical Drains(Sand Drains, Pack Drain, PBD) is used for Vertical Drains Method in domestic. Each of the drains is selected after it consider a field condition and efficiency of drain. A discharge capacity is very important factor, which to estimate a efficiency. And the smear Zone where disturbance area of in-suit by installation of Vertical Drains is important factor to select a drains. In this study, the complex discharge capacity test was operated for discharge capacity comparison of the Wing Drain and PBD. And a model test was operated to apprehend smear zone of the Wing Drain and PBD. From these tests, it was apprehended an engineering characteristic of vertical drain. The results of the complex discharge capacity test, a discharge capacity fell below $20cm^3/sec$ to $1cm^3/sec$ in more than overburden load $2.5kg/cm^2$. The Wing Drain maintained a over $40cm^3/sec$ in more than overburden load $2.5kg/cm^2$ and minimum discharge capacity $8cm^3/sec$. The results of the smear zone test, a influence bounds of smear zone was more larger in case of the Wing Drain(rectangle) than the PBD. But when a discharge capacity of Wing Drain is considered, it was concluded which smear zone bounds difference was effected in comparison with PBD. I think that it minimized a mandrel section to minimize a smear zone effect range

• Structural Engineering and Mechanics
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• v.3 no.5
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• pp.429-443
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• 1995

The deformational response of plastic board drains installed to accelerate consolidation of soft soils, is examined as a problem of downdrag. The drain is modelled as a beam-column in which the axial load increases nonlinearly with depth. The soil response is represented by the Winkler medium whose coefficient of subgrade modulus increases linearly with depth. The governing equations for the drain-soil system are derived and solved as an eigenvalue problem. The critical buckling loads and the shape of the drain are obtained as functions of the normalized subgrade modulus of the soil at the top, the parameters signifying the variation of axial load along the length of the drain and the increase of subgrade modulus with depth. The derived deformed shapes of the drain are consistent with the observed ones.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 1997.11a
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• pp.451-462
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• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.484-487
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• 2007

This study was analyzed the correlation between physically measured values and psychological response for noise of water supply and drain installations in apartment bathroom. It exhibited the noise criteria of water supply and drain installations in apartment bathroom after recording noise of water supply and drain installations. Also, It was carried out the field psycho-acoustic test to find a correlation between physically measured values and psychological response of the noise criteria of water supply and drain installations in apartment bathroom, and the results is that 40dB (A) to 45dB (A) was investigated suitable in lowest criteria.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1187-1194
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• 2006

This study analyzed characteristics of soft ground consolidation according to depths of vertical drain. As the result, when the depth ratio of vertical drains (L/D) were 0.5, 0.7, and 1.0, consolidation characteristics were similar up to 70% in consolidation degree under one-dimensional drain condition. However, above this degree, consolidation speed became slower as L/D became smaller. Two-dimensional drain condition also showed a similar tendency, but when L/D was 1.0, the consolidation speed was relatively higher.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.579-580
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• 2006

Simple nonoverlapped source/drain-to-gate MOSFETs to suppress GIDL (gate-induced drain leakage) is simulated with SILVACO simulation tool. Changing spacer thickness for adjusting length of Drain to Gate nonoverlapped region, this simulation observes on/off characteristic of nonoverlapped source/drain-to-gate MOSFETs. Off current is dramatically decreased with S/D to gate nonoverlapped length increasing. The result shows that maximum on/off current ratio is achieved by adjusting nonoverlapped length.

• Journal of electromagnetic engineering and science
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• v.9 no.2
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• pp.78-84
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• 2009

This paper represents the effects of drain bias on the linearity and efficiency of an analog pre-distortion power amplifier(PA) for wideband code division multiple access(WCDMA) repeater applications. For verification, an analog predistorter(APD) with three-branch nonlinear paths for memory-effect compensation is implemented and a class-AB PA is fabricated using a 30-W Si LOMaS. From the measured results, at an average output power of 33 dBm(lO-dB back-off power), the PA with APD shows the adjacent channel leakage ratio(ACLR, ${\pm}$5 MHz offset) of below -45.1 dBc, with a drain efficiency of 24 % at the drain bias voltage($V_{DD}$) of 18 V. This compared an ACLR of -36.7 dEc and drain efficiency of 14.1 % at the $V_{DD}$ of 28 V for a PA without APD.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.