• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.11a
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• pp.5-10
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• 2006

This study aims to propose appropriate evaluating method of noise emission from water supply and drain installations in apartment bathroom. Because KS(Korean Standard) about water installations noise in apartment bathroom only are establishing the measurement procedure of it, Evaluation and rating procedure is necessary to improve the sound insulation performance of the apartment and to reduce the apartment dweller's unsatisfaction with the noise. Thus, this study reviewed the standards and evaluating methods about the water supply and drain installations noise of many other country. We measured the noise emission from the installations in many apartment bathroom, and then we calculated the noises to dB(A), N, NC evaluated numbers. We analyze the coefficient of the corelation among the evaluated numbers to induce the appropriate method. As a result, the dB(A) method is most easy to evaluateing and very high corelated wth N and N index, So the dB(A) method is suitable to be adopted KS evaluating procedure of noise emission from water installations in apartment bathroom.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.03a
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• pp.293-299
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• 2008

If a conventional type of Plastic Board Drain (PBD) is installed to the deep clay deposit, it is subjected to a high lateral earth pressure. a flow channel of PBD may be reduced by the collapse of cores and clogged by the intrusion of filter into the space between cores which are made by lateral pressure. It could decrease the ability of initial discharge capacity and the reliability of long term discharge capacity. A cylindrical plastic board drain (C-PBD) considered in this study consists of cylindrical core and several supports so that it can prevent the reduction of area of flow channel from the higher lateral earth pressure effectively. The discharge capacity of C-PBD was compared to that of a conventional PBD through performing experiments using the composite discharge capacity apparatus which can consider in-situ condition such as penetration of drains, ground settlement and discharge capacity. As a result, C-PBD showed much better performance than PBD in the ability of discharge. It was observed that the C-PBD was folded whereas the conventional PBD was folded after the experiment.

• KIEAE Journal
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• v.7 no.1
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• pp.57-64
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• 2007

This study aims to propose appropriate evaluating method of noise emission from water supply and drain installations in apartment bathroom. The measurement procedure of water installations noise in apartment bathroom were established, so it is necessary to provide the evaluating method and criteria to improve the sound insulation performance of the apartment and to reduce the apartment dweller's unsatisfaction with the noise. Thus, this study reviewed the standards and evaluating methods about the water supply and drain installations noise of many other country. After measuring the noise emission from the installations in many apartment bathroom, The noise were evaluated dB(A), N, NC index, To induce the appropriate method, the coefficient of the correlation among the evaluated numbers were analyzed. As a result, the dB(A) method is most easy to evaluating and very high correlated with N and N index, So the dB(A) method is suitable to be adopted KS evaluating procedure of noise emission from water installations in apartment bathroom.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.199-200
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• 2005

In this paper, the electrical characteristics and hot-carrier induced electrical performance degradations of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated. Different from the low voltage CMOS device, the only specific on-resistance was degraded due to hot-carrier stressing in LDMOS transistor. However, other electrical parameters such as threshold voltage, transconductance, and saturated drain current were not degraded after stressing. The amount of on-resistance degradation of LDMOS transistor that was implanted n-well with $1.0\times10^{13}/cm^2$ was approximately 1.6 times more than that of LDMOS transistor implanted n-well with $1.0\times10^{12}/cm^2$. Similar to low voltage CMOS device, the peak on-resistance degradation in LDMOS device was observed at gate voltage of 2.2V while the drain applied voltage was 50V. It means that the maximum impact ionization at the drain junction occurs at the gate voltage of 2.2V applying the drain voltage of 50V.

• Geomechanics and Engineering
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• v.33 no.1
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• pp.65-75
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• 2023

Recycled concrete aggregate (RCA) is widely used as a construction material in road construction, concrete structures, embankments, etc. However, it has been reported that calcite (CaCO₃) precipitation from RCA can be a cause of clogging when used in drainage applications. An accelerated calcite precipitation (ACP) procedure has been devised to evaluate the long-term geochemical performance of RCA in subsurface drainage systems. While the ACP procedure was useful for the French Drain application, there remained opportunities for improvement. In this study, key factors that control the formation of calcite precipitation were quantitatively evaluated, and the results were used to improve the current prototype ACP method. A laboratory parametric study was carried out by investigating the effects of reaction temperature and time on the formation of calcite precipitation of RCA, with determining an optimum reaction temperature and time which maximizes calcite precipitation. The improved ACP procedure was then applied to RCA samples that were graded for Type I Underdrain application, to compare the calcite precipitation. Two key findings are (1) that calcite precipitation can be maximized with the optimum heating temperature (75℃) and time (17 hours), and (2) the potential for calcite precipitation from RCA is not as significant as for limestone. With the improved ACP procedure, the total amount of calcite precipitation from RCAs within the life cycle of a drain system can be determined when RCAs from different sources are used as pipe backfill materials in a drain system.

• Journal of Korean Tunnelling and Underground Space Association
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• v.20 no.5
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• pp.869-886
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• 2018

Rockbolt is one of the most common supports used to reinforce discontinuous rock during underground excavation. Extra drain pipes are installed to improve excavation workability and the anchorage of rockbolts in water bearing ground. The drain pipe is effective in improving the workability by providing drainage path, but it is difficult to expect the reinforcement effect, increasing disturbance of the discontinuous rock mass and the construction cost. To solve this problem, dual purpose rockbolt (DPR) has been developed for the reinforcement of rock and the drainage of ground water. DPR was able to improve the mechanical and hydraulic stability of the rocks quickly and economically. Two kinds of DPRs using FRP (Fiber Reinforced Plastic) and steel were investigated for the mechanical and hydraulic performance. Also, the workability and stability of DPR were analyzed.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.139-144
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• 2003

We report the results of extensive mixed mode simulations and theoretical analysis to quantify the contribution of the edge direct tunneling (EDT) current on the total gate leakage current of 80nm NMOSFET with SiO2 gate dielectric. It is shown that EDT has a profound impact on basic analog circuit building blocks such as sample-hold (S/H) circuit and the current mirror circuit. A transistor design methodology with zero gate-source/drain overlap is proposed to mitigate the EDT effect. This results in lower voltage droop in S/H application and better current matching in current mirror application. It is demonstrated that decreasing the overlap length also improves the basic analog circuit performance metrics of the transistor. The transistor with zero gate-source/drain overlap, results in better transconductance, input resistance, output resistance, intrinsic gain and unity gain transition frequency.