• 대한전자공학회논문지
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• 제26권2호
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• pp.10-17
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• 1989

Reed-Solomon(RS) 부호의 복호에서 오류위치다항식을 구하기 위한 알고리듬 중 Peterson에 의해 제안되고 Gorenstein과 Zierler가 개선한 알고리듬은 오류정정능력 t가 비교적 작을 경우 BerlekampMassey의 반복 알고리듬, Euclid 알고리듬을 이용한 복호, 변환영역에서의 복호보다 오류위치다항식의 계산이 간단하고 장치화에 이점이 있다. 본 논문에서는 Peterson-Gorenstein-Zieler의 알고리듬 RS부호의 부호화와 복호과정을 체계적으로 연구, 분석하고 실제로 통신 시스템에 응용할 수 있도록 유한체 GF($2^5$)의 심볼로 이루어지는 2중 오류정정(31,27)RS 부호의 부호기와 복호기를 설계하여 TTL IC로 장치화 하였다.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• ETRI Journal
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• 제26권6호
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• 한국수자원학회논문집
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• 제56권10호
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• pp.603-617
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• 2023

본 연구는 포말대 흐름의 난류특성에 대한 이해를 목표로 한다. 포말대 흐름을 재현하기 위해 이중 댐-붕괴 파랑생성법이 제시되었다. 기존 단일 댐-붕괴 실험과 비교하여 이중 댐-붕괴 실험은 두 개의 수문의 개방 시간을 조절하여 처오름과 처내림의 다양한 상호작용을 구현할 수 있다. 수치모형으로는 OpenFOAM의 overInterDyMFoam이 활용되었다. overInterDyMFoam은 밀도가 다른 두 유체(i.e., 공기, 물)의 경계면 추적기법과 동격자 및 중첩 격자 기법을 결합한 모형이다. 질량보존 및 운동량 방정식으로는 𝜅-𝜖 난류모형이 결합된 이차원 Reynolds-Averaged Navier-Stokes 모형이 채택되었다. 수치모형실험 결과는 수리모형실험의 수심 및 흐름 방향 유속 시계열과 비교하여 정확도가 검증되었다. 난류 운동 에너지 분포특성을 확인하여 각 흐름 단계(i.e., 처오름, 처내림, 흐름의 상호작용)의 난류 진화 특성을 고찰하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.545-548
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• 2004

The paper describes the design of high-speed, high-resolution Sample-and-Hold circuit which shows the conversion rate 80MHz and the power supply of 3.3v with 0.35um CMOS 2-poly 4-metal process for high-speed, high resolution Analog-to-Digital Converter. For improving Dynamic performance of Sample-and-Hold, Two Double bootstrap switch and high performance operational amplifier with gain booster, which are used. and For physical stability of Sample and Hold circuit, reduces excess voltage of gate in bootstrap switch. Simulation results using HSPICE shows the SFDR of 71dB, 75dB in conversion rate of 80MHz result for two inputs(0.5Vpp, 10MHz and 1Vpp, 10MHz) and the power dissipation of 48mW at single 3.3V supply voltage.

• IEIE Transactions on Smart Processing and Computing
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• 제5권1호
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• 전자공학회지
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• 제42권7호
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• pp.26-38
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• 2015

고집적화를 위한 Floating Gate NAND 개발과정에서 몇 차례 기술적 한계상황에 직면하였었지만, Air-Gap, Double patterning, Multi-level Cell, Error Correction Code과 같은 breakthrough idea 을 활용하여 1Xnm까지 성공적인 scale-down 을 하였고 10nm 까지도 바라보고 있지만, 10nm 미만으로는 적절한 방안을 찾지 못한 상황입니다. CTD 의 3D NAND Flash는 Aspect Ratio, Poly channel의 intrinsic 특성, Data 보존 능력 등 해결 해야 할 issue 들이 남아 있지만, F.G Flash 의 지난 20년간 Lesson-learn 과 Band engineering, Channel Si, PUC 의 요소기술 개발 및 System algorithm 개발, QLC 개발 등을 통하여 F.G Flash를 넘어 지속적인 Cost-down 이 가능할 것입니다.

• 제어로봇시스템학회논문지
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• 제6권2호
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• pp.228-233
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• 2000

It is common to apply the technology of FPGA (Fie이 Programmable Gate Array) which is one of the design methods for ASIC(Application Specific IC)to the active components used in the data processing at the digital system of satellite aircraft missile etc for compact lightness and integration of Printed Circuit Board (PCB) In carrying out the digital data processing the FPGAs are designed for the various functions of the Process Control Interrupt Control Clock Generation Error Detection and Correction (EDAC) as the individual module. In this paper an FPGA chip for Single Error Correction and Double Error Detection (SEC-DED) for EDAC is designed and simulated by using a VLSI design software LODECAP.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.