• Journal of Information Display
• /
• v.7 no.3
• /
• pp.19-22
• /
• 2006

White polymeric light-emitting devices (WPLEDs) have been fabricated from polyfluorene-based (PFO) blue and MEH-PPV polymer blending systems. A device structure of ITO / PEDOT:PSS / Blending polymer / Blue polymer / LiF / Al was employed. This structure of double emission layers showed significant improvement of white color shift phenomenon. A current efficiency of 4.67 cd/A (3,900 $cd/m^{2}$, 6.4 V) and a brightness value of 17,600 $cd/m^{2}$ at 9.4 V with (0.34, 0.35) CIE coordinates at 5 V and (0.29, 0.29) at 9 V were achieved achieved.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.994-997
• /
• 2006

We have fabricated white polymeric light-emitting devices (WPLEDs) from polyfluorene-based (PFO) blue and MEH-PPV polymer blending systems. A device structure of ITO / PEDOT:PSS / Blending polymer / Blue polymer / LiF / Al was employed. This structure of double emission layers results in the significant improvement of white color shift phenomenon. A current efficiency of 4.67 cd/A ($3,900cd/m^2$, 6.4V) and a brightness value of $17,600cd/m^2$ at 9.4 V with (0.34, 0.35) CIE coordinates at 5V and (0.29, 0.29) at 9V were obtained.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1577-1580
• /
• 2012

The orientational and dynamic behavior of liquid crystal molecules on the alignment layer surfaces of liquid crystal display (LCD) devices is crucial to their performance, but there are only a few methods of experimentally elucidating the interactions between the liquid crystals and the alignment layers. Inspired by the natural and technical similarities between membrane proteins in lipid bilayers and liquid crystals in LCDs, we employed solid-state NMR methodologies originally developed for the study of membrane proteins in lipid bilayers for the in-situ analysis of liquid crystal display panels. In this article, we present a home-built 500 MHz narrowbore (NB) The orientational and dynamic behavior of liquid crystal molecules on the alignment layer surfaces of liquid crystal display (LCD) devices is crucial to their performance, but there are only a few methods of experimentally elucidating the interactions between the liquid crystals and the alignment layers. Inspired by the natural and technical similarities between membrane proteins in lipid bilayers and liquid crystals in LCDs, we employed solid-state NMR methodologies originally developed for the study of membrane proteins in lipid bilayers for the in-situ analysis of liquid crystal display panels. In this article, we present a home-built 500 MHz narrowbore (NB) $^{19}F-^{13}C$ double resonance solid-state NMR probe with a flat-square coil and the first application of this probe for the in-situ analysis of LCD panel samples. double resonance solid-state NMR probe with a flat-square coil and the first application of this probe for the in-situ analysis of LCD panel samples.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.3
• /
• pp.51-55
• /
• 2014

Ni-CNT(Carbon Nanotubes) composite coating is often used for the surface treatment of mechanical/electronic devices to improve the properties of the Ni coating. For the Ni-CNT coating, the dispersion of CNT fibers is a critical process. In this study, ultrasonic treatment instead of the conventional ball milling was attempted as a dispersion method for the electroless Ni-CNT coating. SEM-EDX analysis was performed and contact angle, sheet resistance, and micro-hardness were measured. Results showed that the ultrasonic treatment was comparable to the ball milling, as a dispersion method, but the difference was negligible. However, combined ball milling and ultrasonic treatment(double treatment) showed much improved micro-hardness value, above 350Hv(close to the value obtained by the Ni-CNT electroplating). In addition, electroless Ni-CNT(double-treated) coatings formed on the thin Ni film deposited by the electroless plating(double coating) showed better mechanical properties. Thus, double treatment and double coating are suggested as an improved electroless Ni-CNT coating method.

• Proceedings of the KIEE Conference
• /
• 1991.11a
• /
• pp.423-426
• /
• 1991

A Plasma Display Panel with Double Pulse Memory was fabricated and its luminance and luminous efficacy were investigated. Application of non-discharge pulses to an auxiliary anode increased luminance by 43% and luminous efficacy by 33%. Compared to PDP with PPM(Planar Pulse Memory) driving technique, PDP with DPM obtained higher luminous efficacy and consumed lower power with the same delay time.

• ETRI Journal
• /
• v.20 no.1
• /
• pp.37-45
• /
• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.977-979
• /
• 2006

Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at $2mA/cm^2$

• Journal of Satellite, Information and Communications
• /
• v.8 no.2
• /
• pp.36-43
• /
• 2013

In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.23 no.1
• /
• pp.80-86
• /
• 2011

Vertical open display cabinets are widely used in shopping mall, supermarkets, retail stores. Maintaining the temperature of foods in the display cabinet is vitally important to retailers to ensure optimal food quality and safety. The purpose of this study is to reduce the infiltration of air and heat loss from ambient space to display cabinet. The three-dimensional Computational Fluid Dynamics(CFD) simulation is used for the analysis of air flow patterns and temperature distribution in refrigerated display cabinets. Under several operating conditions which vary both the inner and outer jet velocities in the range from 0.3 to 1.1 m/s, simulations were carried out. This paper presents a performance of display cabinets with single jet and double jet. The energy consumption due to thermal entrainment ratio is plotted with varying Re. It was found that the double jet system is better than single jet system in terms of temperature distribution and energy saving.

• Journal of Information Display
• /
• v.13 no.2
• /
• pp.61-66
• /
• 2012

The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.