• 제목/요약/키워드: Double devices

검색결과 445건 처리시간 0.03초

[TCTA-TAZ] : Ir(ppy)3 이중 발광층을 갖는 고효율 녹색 인광소자의 제작과 특성 평가 (Fabrication and Characterization of High Efficiency Green PhOLEDs with [TCTA-TAZ] : Ir(ppy)3 Double Emission Layers)

  • 신상배;신현관;김원기;장지근
    • 한국재료학회지
    • /
    • 제18권4호
    • /
    • pp.199-203
    • /
    • 2008
  • High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.

DPS(Double Polarity Source) 구조를 갖는 고전압 동작용 EDNMOS 소자의 정전기 보호 성능 개선 (Improvement of ESD Protection Performance of High Voltage Operating EDNMOS Device with Double Polarity Source (DPS) Structure)

  • 서용진;양준원
    • 한국위성정보통신학회논문지
    • /
    • 제9권2호
    • /
    • pp.12-17
    • /
    • 2014
  • 본 논문에서는 고전압에서 동작하는 마이크로칩의 안정하고 튼튼한 정전기 보호 성능을 구현하기 위해 이중 극성 소오스를 갖는 DPS_EDNMOS 변형소자가 제안되었다. 제안된 DPS는 N+ 소오스로 부터 전자 풍부 영역이 측면 확산되는 것을 방지하기 위해 N+ 소오스 측에 P+ 확산층을 의도적으로 삽입한 구조이다. 시뮬레이션 결과에 의하면 삽입된 P+ 확산층은 고전자 주입에 의해 발생하는 깊은 전자채널의 형성을 효과적으로 막아주고 있음을 알 수 있었다. 따라서 종래의 EDNMOS 표준소자에서 문제시 되었던 더블 스냅백 현상을 해결할 수 있었다.

Developing 500 MHz NB 19F-13C Double Resonance Solid-State NMR Probe for in-situ Analysis of Liquid Crystal Display Panels

  • Choi, Sung-Sub;Jung, Ji-Ho;Park, Yu-Geun;Park, Tae-Joon;Park, Gregory Hyung-Jin;Kim, Yong-Ae
    • Bulletin of the Korean Chemical Society
    • /
    • 제33권5호
    • /
    • pp.1577-1580
    • /
    • 2012
  • The orientational and dynamic behavior of liquid crystal molecules on the alignment layer surfaces of liquid crystal display (LCD) devices is crucial to their performance, but there are only a few methods of experimentally elucidating the interactions between the liquid crystals and the alignment layers. Inspired by the natural and technical similarities between membrane proteins in lipid bilayers and liquid crystals in LCDs, we employed solid-state NMR methodologies originally developed for the study of membrane proteins in lipid bilayers for the in-situ analysis of liquid crystal display panels. In this article, we present a home-built 500 MHz narrowbore (NB) The orientational and dynamic behavior of liquid crystal molecules on the alignment layer surfaces of liquid crystal display (LCD) devices is crucial to their performance, but there are only a few methods of experimentally elucidating the interactions between the liquid crystals and the alignment layers. Inspired by the natural and technical similarities between membrane proteins in lipid bilayers and liquid crystals in LCDs, we employed solid-state NMR methodologies originally developed for the study of membrane proteins in lipid bilayers for the in-situ analysis of liquid crystal display panels. In this article, we present a home-built 500 MHz narrowbore (NB) $^{19}F-^{13}C$ double resonance solid-state NMR probe with a flat-square coil and the first application of this probe for the in-situ analysis of LCD panel samples. double resonance solid-state NMR probe with a flat-square coil and the first application of this probe for the in-situ analysis of LCD panel samples.

더블 PI:PCBM 유전체 층 기반의 초 저전력 CNT 시냅틱 트랜지스터 (Ultra-Low Powered CNT Synaptic Transistor Utilizing Double PI:PCBM Dielectric Layers)

  • 김용훈;조병진
    • 한국재료학회지
    • /
    • 제27권11호
    • /
    • pp.590-596
    • /
    • 2017
  • We demonstrated a CNT synaptic transistor by integrating 6,6-phenyl-C61 butyric acid methyl ester(PCBM) molecules as charge storage molecules in a polyimide(PI) dielectric layer with carbon nanotubes(CNTs) for the transistor channel. Specifically, we fabricated and compared three different kinds of CNT-based synaptic transistors: a control device with $Al_2O_3/PI$, a single PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%), and a double PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%)/PI:PCBM(0.05 wt%). Statistically, essential device parameters such as Off and On currents, On/Off ratio, device yield, and long-term retention stability for the three kinds of transistor devices were extracted and compared. Notably, the double PCBM device exhibited the most excellent memory transistor behavior. Pulse response properties with postsynaptic dynamic current were also evaluated. Among all of the testing devices, double PCBM device consumed such low power for stand-by and its peak current ratio was so large that the postsynaptic current was also reliably and repeatedly generated. Postsynaptic hole currents through the CNT channel can be generated by electrons trapped in the PCBM molecules and last for a relatively short time(~ hundreds of msec). Under one certain testing configuration, the electrons trapped in the PCBM can also be preserved in a nonvolatile manner for a long-term period. Its integrated platform with extremely low stand-by power should pave a promising road toward next-generation neuromorphic systems, which would emulate the brain power of 20 W.

이중-금속 장거리 표면-플라즈몬 도파로 (Long-Range Surface-Plasmons Excited on Double-Layered Metal Waveguides)

  • 주양현;정명진;송석호
    • 한국광학회지
    • /
    • 제19권1호
    • /
    • pp.73-79
    • /
    • 2008
  • 금속선 도파로 면과 금속 평면이 수직으로 적층된 장거리 표면-플라즈몬 도파로 구조를 제안하였으며, 표면-플라즈몬 모드의 특성을 유전체의 굴절율과 두께 변화에 대하여 이론적으로 분석하고 실험적으로 검증하였다. 위층의 금속선 도파로를 S-곡선과 Y-분기 형태로 변형시킨 이중-금속 도파로를 제작하여, 제안된 이중-금속 도파로 구조의 광 소자 응용 가능성을 살펴보았다. 제안된 이중금속 구조에서는 도파로 코어에 해당하는 두 금속 박막 사이의 유전체 굴절률을 임의로 선택하여도 장거리 표면 플라즈몬 모드가 존재할 수 있으며, 표면-플라즈몬 모드의 전파거리는 두 금속 박막 사이의 유전체 두께를 조절함으로써 증가시킬 수 있다. 또한, 이중-금속 도파로는 표면-플라즈몬을 전달할 뿐만 아니라, 삽입된 코어 유전체에 전압 및 전류를 인가하기에도 매우 적합한 구조로서, 표면-플라즈몬 능동소자 및 비선형 소자 구현에 많은 가능성을 열어줄 것으로 기대된다.

PFO : MEH-PPV 발광층과 정공 차단층을 이용한 고분자 발광다이오드의 특성 (Properties of Polymer Light Emitting Diodes Using PFO : MEH-PPV Emission Layer and Hole Blocking Layer)

  • 이학민;공수철;신상배;박형호;전형탁;장호정
    • 반도체디스플레이기술학회지
    • /
    • 제7권2호
    • /
    • pp.49-53
    • /
    • 2008
  • The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.

  • PDF

Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices

  • Choi, Woo-Young;Lee, Jong-Duk;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제6권1호
    • /
    • pp.43-51
    • /
    • 2006
  • 80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

Establishment of strain measurement system for evaluation of strain effect in HTS tapes under magnetic field

  • Dedicatoria, Marlon J.;Shin, Hyung-Seop
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제13권4호
    • /
    • pp.14-17
    • /
    • 2011
  • The evaluation of the electromechanical properties of HTS CC tapes is one of the foremost procedures to be done to ensure the applicability of superconducting wires to electric devices. A precise measurement of the stress and strain is important in deriving the mechanical properties under operating environment. Up to now, there is no standard test method yet for the electromechanical property evaluation of HTS tapes under self field and external magnetic field although there are already reports on the different devices used to evaluate these properties. Strain can be measured by adopting a strain gauge or a high resolution double extensometer. In this study, strain effect on $I_c$ in HTS CC tapes under magnetic fields was evaluated. Comparison of advantages and setback of strain measuring devices were discussed. In addition, a dual strain measurement system using both the SG and extensometer may be practical to lessen the burden in case one of the measuring devices does not work well.

TDX-1B 가입자 및 신호처리계 개발 개요

  • 김천명;김철규
    • 정보와 통신
    • /
    • 제6권1호
    • /
    • pp.33-43
    • /
    • 1989
  • TDX-1A의 용량을 2배로 증대시킨 전전자교환기 TDX-1B의 가입자 및 신호처리계는 rack당 최대 1024 가입자를 수용하여 가입자 회선을 스위치 네트워크에 정합하기 위해 필요한 기능 및 가입자에 필요한 신호를 공급하는 기능을 수행하는 subsystem으로서, 가입자회로, 집선장치, 신호장치 및 이의 제어를 위한 프로세서들로 구성된다. 본 고에서는 이러한 TDX-1B 가입자 및 신호처리계의 개발 내역 및 주요기능, 개발 성과에 대하여 기술하였다.

  • PDF