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Improvement of ESD Protection Performance of High Voltage Operating EDNMOS Device with Double Polarity Source (DPS) Structure  

Seo, Yong-Jin (세한대학교 나노정보소재연구소)
Yang, Jun-Won (세한대학교 컴퓨터교육과)
Publication Information
Journal of Satellite, Information and Communications / v.9, no.2, 2014 , pp. 12-17 More about this Journal
Abstract
In this paper, modified EDNMOS device with DPS (double polarity source) structure are suggested to realize stable and robust ESD (electrostatic discharge) protection performance of high voltage operating microchip. This DPS structure inserts the P+ diffusion layer on N+ source side, which in intended to block lateral extension of the electron rich region from N+ source side. Based on our simulation results, the inserted P+ diffusion layer effectively prevents the formation of deep electron channeling induced by high electron injection. As a result, our proposed DPS_EDNMOS devices could overcome the double snapback effect of conventional Std_EDNMOS device.
Keywords
ESD (Electrostatic discharge); EDNMOS (Extended Drain N-type MOSFET); DPS(Double Polarity Source); Double Snapback; Channel Blocking;
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Times Cited By KSCI : 4  (Citation Analysis)
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