• Title/Summary/Keyword: Double devices

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Experimental Study on the Period Control of an U-tube Type Anti-Rolling Tank by using a Double Layer Duct (이중덕트를 이용한 U자형 감요수조의 주기조절 실험 연구)

  • Ju, Youngkwang;Kim, Yong Jig;Ha, Youngrok
    • Journal of the Society of Naval Architects of Korea
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    • v.52 no.2
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    • pp.135-142
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    • 2015
  • The Anti-Rolling Tank(ART) has an advantage over the other roll stabilizing devices, when ship is staying and working at one site of sea. An important design point of ART is the tank tuning, that is, matching the tank natural period to the ship's roll natural period. Since the load condition and consequently the roll natural period of ship is to be changed widely, the natural period of ART also has to be changed widely. In case of the existing U-tube type ART with a single layer duct, the tank natural period can be changed in a relatively narrow range. This paper suggests a new U-tube type ART system using a double layer duct to enable wide change of ART natural period. Through the roll experiments performed in regular beam waves for a box-type model ship, it is shown that the double layer duct ART has about two times wider period range and a better reducing effect of roll magnitude than the single layer duct ART.

High Current Behavior and Double Snapback Mechanism Analysis of Gate Grounded Extended Drain NMOS Device for ESD Protection Device Application of DDIC Chip (DDIC 칩의 정전기 보호 소자로 적용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘 분석)

  • Yang, Jun-Won;Kim, Hyung-Ho;Seo, Yong-Jin
    • Journal of Satellite, Information and Communications
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    • v.8 no.2
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    • pp.36-43
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    • 2013
  • In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

A Study on the Double Gap Blocking Device for the Improvement of Fire Resistance and Airtightness of Steel Door (강철재 도어의 내화, 기밀성 향상을 위한 이중틈새 차단장치에 관한 연구)

  • Lee, Joo-Won;Lim, Bo-Hyuk;Cho, Sung-Kwon;Lee, Hae-Yeol
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2023.05a
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    • pp.147-148
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    • 2023
  • Steel doors, which are common in general buildings, do not seal the gap between the door and the floor, so drafts, noise, dust, and lights flow from the outside, and shielding devices are installed in various materials and methods, such as adding magnetic gate paper to the side of the door or installing a gasket under the door, but performance is limited. Accordingly, in order to fundamentally solve these problems, we researched and developed a double gap blocking device that can improve fire resistance and airtightness performance in steel doors. Unlike general products, the double gap blocking device has the advantage of maximizing airtight performance by forming an air layer in the center when the door is closed, as well as greatly improving the fire resistance performance, which is the basic performance of the fire door.

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Hole trapping in carbon nanotube-polymer composite organic light emitting diodes

  • Woo, H.S.;Czerw, R.;Carroll, D.L.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1047-1052
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    • 2003
  • Controlling carrier transport in light emitting polymers is extremely important for their efficient use in organic opto-electronic devices [1]. Here we show that the interactions between single wall carbon nanotubes (SWNTs) and conjugated polymers can be used to modify the overall mobility of charge carriers within nanotube-polymer nanocomposites. By using a unique, double emitting-organic light emitting diodes (DE-OLEDs) structure. we have characterized the hole transport within electroluminescent nanocomposites (nanotubes in poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) or PmPV). We have shown using this idea that single devices with color tunability can be fabricated. It is seen that SWNTs in PmPV are responsible for hole trapping, leading to shifts in the emission wavelengths. Our results could lead to improved organic optical amplifiers, semiconducting devices, and displays.

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Accelerating Memory Access with Address Phase Skipping in LPDDR2-NVM

  • Park, Jaehyun;Shin, Donghwa;Chang, Naehyuck;Lee, Hyung Gyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.741-749
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    • 2014
  • Low power double data rate 2 non-volatile memory (LPDDR2-NVM) has been deemed the standard interface to connect non-volatile memory devices such as phase-change memory (PCM) directly to the main memory bus. However, most of the previous literature does not consider or overlook this standard interface. In this paper, we propose address phase skipping by reforming the way of interfacing with LPDDR2-NVM. To verify effectiveness and functionality, we also develop a system-level prototype that includes our customized LPDDR2-NVM controller and commercial PCM devices. Extensive simulations and measurements demonstrate up to a 3.6% memory access time reduction for commercial PCM devices and a 31.7% reduction with optimistic parameters of the PCM research prototypes in industries.

Development of the Centralized Monitoring and Control System for Absorption Chillier-heaters

  • Lee, Ji-Hyung;Ryu, Sang-Hun;Park, In-Wan
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.66.2-66
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    • 2001
  • Double-effect absorption chiller-heaters have been widely installed in large buildings and are also becoming popular in mid-sized commercial buildings. While much emphasis is Put on designing energy saving and efficient chiller-heaters, careful attention must also be given to the design of control systems for these devices. Currently, these devices are controlled by their own built-in controllers, such as relay based sequence controller or microprocessor based controller. But, because large buildings require multiple chiller-heaters, a centralized supervision and control system is necessary for the efficient monitoring, control, and operations management of these devices We have developed man-machine interface software that allows the implementation of such a system. This system will support increased reliability, more efficient building management operations, and reduced ...

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Phase Noise Characterization with Optical Carrier Suppression Level on Continuous Wave in the Ranges of Millimeter Waves Generated by Photomixing of Optical Double Sideband-Suppressed Carrier(DSB-SC) (광 반송파가 억압된 양측 대역 방식의 광 혼합을 통하여 발생된 밀리미터파 대역 연속파에서 광 반송파 억압 레벨에 따른 위상 잡음 특성 분석)

  • Kim, Sung-Il;Kang, Kwang-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.974-982
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    • 2009
  • Photomixing techniques beating two optical signals with different wavelengths and strong correlations are also very useful techniques to make a continuous wave(CW) signals in the range of millimeter(mm) and terahertz(THz) frequencies. An optical double sideband-suppressed carrier(DSB-SC) technique is one of the popular techniques to generate two optical signals with different wavelengths and strong correlations. DSB-SC signals with strong correlations are generated by a CW modulation of an optical carrier with a local oscillator and an optical modulator. In the previous parers related the DSB-SC for producing the CW signals within the range of mm and THz frequencies, there have been no reports why the optical carrier should suppress. In order to clear that, we have analyzed and measured the characteristics of the mm-wave CW signals made by the DSB-SC photomixing in this paper. From our analysis and measurement results, compared with the case of the DSB with the maximized optical carrier, the power and phase noise have improved about 23.9 dB and 21 dBc/Hz(@ 1 MHz offset frequency) in the case of the DSB with the minimized optical carrier (that is to say, the DSB-SC). Consequently, it is evident reason that the optical carrier should sufficiently suppress to obtain the mm-wave CW signals with the high power and low noise. This paper has given very helpful data to make mm- and THz-wave CW signals using photomixing techniques with the DSB-SC because the reason why the optical carrier should be suppressed is reported in this paper based on the numerical and experimental results.

The Comparison Of Acupuncture Sensation Index Among Three Different Acupuncture Devices - Double-blind and Randomized Controlled Trial Method - (3개 침제조회사 침구(鍼具)에 대한 침감지표 비교 - 이중 맹검 무작위 배정법 -)

  • Lim, Seong-chul;Seo, Jung-chul;Kim, Kyung-un;Seo, Bo-myung;Kim, Sung-woong;Lee, Se-youn;Jung, Tae-young;Han, Sang-won;Lee, Hyun
    • Journal of Acupuncture Research
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    • v.21 no.6
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    • pp.209-219
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    • 2004
  • Objective : This study was designed to compare acupuncture sensation index among three different acupuncture devices. Methods : A, B and C acupuncture devices were inserted into Quchi(LI 11) of the subjects. After 5 minutes the subjects completed a questionnaire rating the intensity of 21 kinds of acupuncture sensation; hurting, penetrating, sharp, aching, intense, spreading, radiating, tingling, pricking, stinging, pulling, heavy, dull, numb, electric, shocking, hot, burning, cool, pulsing, and throbbing. We compared subjective evaluations of acupuncture sensation among the groups. Results : The acupuncture sensation index when administrated among three different acupuncture devices(A, B and C) was not significantly different. The acupuncture sensation of B acupuncture devices showed significant difference than A or C in Spreading, Dull, Numb item. But, the other items of acupuncture sensation were not significantly different among three acupuncture devices. Conclusions : We found that acupuncture sensation index when administrated among three different acupuncture devices. Further study is needed to know different acupuncture sensation among acupuncture devices.

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Effects of Temperature Stress on VFB Shifts of HfO2-SiO2 Double Gate Dielectrics Devices

  • Lee, Kyung-Su;Kim, Sang-Sub;Choi, Byoung-Deog
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.340-341
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    • 2012
  • In this work, we investigated the effects of temperature stress on flatband voltage (VFB) shifts of HfO2-SiO2 double gate dielectrics devices. Fig. 1 shows a high frequency C-V of the device when a positive bias for 10 min and a subsequent negative bias for 10 min were applied at room temperature (300 K). Fig. 2 shows the corresponding plot when the same positive and negative biases were applied at a higher temperature (473.15 K). These measurements are based on the BTS (bias temperature stress) about mobile charge in the gate oxides. These results indicate that the positive bias stress makes no difference, whereas the negative bias stress produces a significant difference; that is, the VFB value increased from ${\Delta}0.51$ V (300 K, Fig. 1) to ${\Delta}14.45$ V (473.15 K, Fig. 2). To explain these differences, we propose a mechanism on the basis of oxygen vacancy in HfO2. It is well-known that the oxygen vacancy in the p-type MOS-Cap is located within 1 eV below the bottom of the HfO2 conduction band (Fig. 3). In addition, this oxygen vacancy can easily trap the electron. When heated at 473.15 K, the electron is excited to a higher energy level from the original level (Fig. 4). As a result, the electron has sufficient energy to readily cross over the oxide barrier. The probability of trap about oxygen vacancy becomes very higher at 473.15 K, and therefore the VFB shift value becomes considerably larger.

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Double Two Switch Forward Transformer-Linked Soft-Switching PWM DC-DC Power Converter with Tapped Inductor Filters

  • Moisseev Serguei;Koudriavtsev Oleg;Hiraki Eiji;Nakamura Mantaro;Nakaoka Mutsuo;Hamada Satoshi
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.193-197
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    • 2001
  • This paper presents a novel circuit topology of the double two-switch forward type high frequency transformer linked soft-switching PWM DC-DC power converter with tapped inductor filters that can operate under a condition of the low peak voltage stress across the power semiconductor devices and lowered peak current stress through the transformer for some high power applications. This circuit topology of an interleaved two-switch forward soft-switching power converter is proposed in the order to minimize an idle circulating current due to the tapped inductor filter without of any additional active auxiliary resonant-assisted snubber circuits, such as active resonant DC link snubbers and AC link snubbers, active resonant commutation leg link snubbers. The unique advantages of this power converter are less power circuit components and power semiconductor devices, constant frequency PWM scheme, cost effective configuration and wider soft-switching PWM operation range under PWM power regulations load variations. The practical effectiveness of the proposed soft-switching converter circuit topology is tested by simulations and is proved by experimental results received from the 500W-100kHz breadboard setup.

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