• Journal of the Korean Society of Marine Environment & Safety
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• v.4 no.2
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• pp.1-12
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• 1998

This paper descirbes a series of numberical simulations of grounding accidents of four 40,000 DWT Conventional and Advanced Double Hull tanker bottom structures using LS/DYNA3D. The overall objective of this study is no understand the structural failure and energy absorbing mechanisms during grounding events for candidate double hull tanker bottom structures, which lead to the initiation of inner shell rupture and cause the kinetic energy dissipation to bring the ship to a stop. These nuberical simulations of the grounding events will contribute to future improvements in tanker safety at the design stage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.3
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• pp.571-576
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• 2016

Asymmetric double gate(DG) MOSFET has the different top and bottom gate oxides thicknesses. It is analyzed the deviation of subthreshold swing(SS) and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric DGMOSFET. SS varied along with conduction path, and conduction path varied with top and bottom gate oxide thickness. The asymmetric DGMOSFET became valuable device to reduce the short channel effects like degradation of SS. SSs were obtained from analytical potential distribution by Poisson's equation, and it was analyzed how the ratio of top and bottom oxide thickness influenced on conduction path and SS. SSs and conduction path were greatly influenced by the ratio of top and bottom gate oxide thickness. Bottom gate voltage cause significant influence on SS, and SS are changed with a range of 200 mV/dec for $0<t_{ox2}/t_{ox1}<5$ under bottom voltage of 0.7 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Steel and Composite Structures
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• v.35 no.3
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• pp.371-384
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• 2020

The steel-concrete double composite girder in the negative flexural region combines an additional concrete slab to the steel bottom flange to prevent the local steel buckling, however, the additional concrete slab may lower down the neutral axis of the composite section, which is a sensitive factor to the tensile stress restraint on the concrete deck. This is actually of great importance to the structural rationality and durability, but has not been investigated in detail yet. In this case, a series of 5.5 m-long composite girder specimens were tested by negative bending, among which the bottom slab configuration and the longitudinal reinforcement ratio in the concrete deck were the parameters. Furthermore, an analytical study concerning about the influence of bottom concrete slab thickness on the cracking and sectional bending-carrying capacity were carried out. The test results showed that the additional concrete at the bottom improved the composite sectional bending stiffness and bending-carrying capacity, whereas its effect on the concrete crack distribution was not obvious. According to the analytical study, the additional concrete slab at the bottom with an equivalent thickness to the concrete deck slab may provide the best contributions to the improvements of crack initiation bending moment and the sectional bending-carrying capacity. This can be applied for the design practice.

• Special Issue of the Society of Naval Architects of Korea
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• 2013.12a
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• pp.81-84
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• 2013

일반적인 Bulk carrier는 Single deck, Double bottom, Hopper side tank, Top side tank와 함께 Single side skin 또는 Double side skin으로 구성되어 Single hull bulk carrier 또는 Double hull bulk carrier라 불린다. 본 논문의 연구선박인 Double hull bulk carrier는 CSR에서 규정짓고 있는 Double hull bulk carrier의 특징 중 Hopper side tank가 없기에 일반적인 Double hull bulk carrier와는 다른 구조를 가진다. 구조적 특징으로는 Inner bottom과 Inner hull 연결부위에 응력 집중 발생, Side shell의 Shear에 대해 구조적 안전성, Double hull에 대한 CSR for bulk carrier의 Rule적용 여부에 대한 판단 등이 있다. 따라서 본 연구에서는 Double hull bulk carrier의 구조적 특징과 구조해석을 통한 응력 집중 부위의 평가 및 Fatigue analysis을 통한 피로수명을 계산하여 이를 통해 구조의 안전성을 살펴보고자 한다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of Ocean Engineering and Technology
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• v.34 no.2
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• pp.97-109
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• 2020

In this study, ultimate strength characteristics of clamped sandwich panels with metal faces and an elastic isotropic core under combined in-plane compression and lateral pressure loads are investigated to verify the applicability of the ultimate strength design formula for ship structures. Alternative elastomer-cored steel sandwich panels are selected instead of the conventional bottom stiffened panels for a Suezmax-class tanker and then the ultimate strength characteristics of the selected sandwich panels are examined by using nonlinear finite element analysis. The change in the ultimate strength characteristics due to the change in the thickness of the face plate and core as well as the amplitude of lateral pressure are summarized and compared with the results obtained by using the ultimate strength design formula and nonlinear finite element analysis. The insights and conclusions developed in the present study will be useful for the design and development of applications for sandwich panels in double hull tanker structures.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.704-707
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• 2013

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.657-662
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• 2014

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.