• Korean Journal of Soil Science and Fertilizer
• /
• 제40권5호
• /
• pp.412-417
• /
• 2007

This study was to elucidate the effects of layered double hydroxides(LDHs) application on the chemical properties of the soils along with the fate of the applied LDHs. The effects of LDHs application were compared with those of calcium carbonate widely used for the neutralization of acidic soils. Incorporation of LDHs into the soil resulted in higher pH value and $Mg^{2+}$ content in soil leachate than that of $CaCO_3$ treatment. There was no significant difference in water-soluble P content in both the treatments. However, $Al^{3+}$ and $Si^{4+}$ contents were decreased by LDHs and $CaCO_3$ treatment, even though a large amount of $Al^{3+}$ was released into soil solution with the disintegration of LDHs framework. LDHs structure in soil was gradually disintegrated from the its original layered structure under acidic condition of soil. Therefore, this study suggests that LDHs could be utilized as a carrier of functional substances to enhance the efficiency of various ago-chemicals without any ill effects on the soil environments.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• 제58권2호
• /
• pp.101-107
• /
• 2009

This paper deal with development of on-line type voltage sag compensation system using supercapacitor EDLC to solve the voltage sag problems which are considered to be dominant disturbances affecting the power quality. With the wide use of semiconductor devices in electrical equipment, modem-type loads are becoming increasingly sensitive to the voltage sags and the disturbances prove to be costly to industries. Supercapacitor EDLC is employed to compensate dynamically for the voltage sag of system with sensitive loads. This capacitor has higher energy density than the electrolytic capacitor. Also, this capacitor has a lot of advantage such as no maintenance, longer life cycle and faster charge-discharge time than the battery system. Therefore, in this paper, the energy design scheme of supercapacitor and the configuration technique of on-line type voltage sag compensation systems are newly introduced. According to the results of experimental of prototype 5[kVA] system, it is verified that the developed system has effectiveness of voltage sag compensation by using a supercapacitor EDLC.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.860-864
• /
• 2003

Recently. use of compound semiconductor is widely increasing in the area of LED and RF device. In this study, wafer bonding module is designed and optimized to bond 6 inches device wafer and carrier wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Load spreader and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analyses show the designed mechanisms are very effective in performance improvement.

• Journal of Communications and Networks
• /
• 제12권1호
• /
• pp.43-51
• /
• 2010

IEEE 802.11 defines distributed coordination function (DCF), which is characterized by CSMA/CA and binary exponential backoff (BEB) algorithm. Most modifications on DCF so far have focused on updating of the contention window (CW) size depending on the outcome of own frame transmission without considering freezing periods experienced in the backoff interval. We propose two simple but novel schemes which effectively utilize the number of freezing periods sensed during the current backoff interval. The proposed schemes can be applied to DCF and its family, such as double increment double decrement (DIDD). Saturation throughput of the proposed schemes is analyzed by means of Bianchi's Markovian model. Computer simulation validates the accuracy of the analysis. Numerical results based on IEEE 802.11b show that up to about 20% improvement of saturation throughput can be achieved by combining the proposed scheme with conventional schemes when applied to the basic access procedure.

• IEIE Transactions on Smart Processing and Computing
• /
• 제4권6호
• /
• pp.443-449
• /
• 2015

This paper considers the physical layer security problem for a two-way vehicle-to-vehicle network, where the two source vehicles can only exchange information through an untrusted relay vehicle. The relay vehicle helps the two-way transmission but also acts as a potential eavesdropper. Each vehicle has a random velocity. By exploiting the random carrier frequency offsets (CFOs) caused by random motions, a secure double-differential two-way relay scheme is proposed. While achieving successful two-way transmission for the source vehicles, the proposed scheme guarantees a high decoding error floor at the untrusted relay vehicle. Average symbol error rate (SER) performance for the source vehicles and the untrusted relay vehicle is analyzed. Simulation results are provided to verify the proposed scheme.

• KSBB Journal
• /
• 제15권5호
• /
• pp.514-520
• /
• 2000

Simultaneous nitrification and denitrification of ammonia and organic compounds-containing wastewater were performed in a fluidized bed biofilm reactor with polysulfone(PS) hollow fiber as a double layer biomass carrier. The PS hollow fiber fragment has both aerobic and anoxic environments for the nitrifiaction and denitrification at the shell and lumen-side respectively. The reactor system showed about 80% nitrification efficiency stably throughout the ammonia load conditions applied in the experiment. Denitrification efficiency depended on organic load and C/N ratio. High free ammonia concentration and low dissolved oxygen resulted in nitrite accumulation which leads to enhance organic carbon efficiency in denitrification when compared to nitrate denitrification. The simultaneous nitrification and denitrification reactor system has an economic advantages in reduced chemical cost of organic carbon for denitrification as well as compact reactor configuration.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제4권1호
• /
• pp.1-11
• /
• 2004

A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• 제37권1호
• /
• pp.10-17
• /
• 1988

The torsional resonance of the generator shaft system has the possibility of inducing voltages across the stator winding because it is a carrier with the field excitation. And these torsional induced stator currents inducs the eddy current in the rotor. This paper describes the eddy current based on the double Fourier series method. The forces generating during the torsional interaction are computed using the Maxwell's magnetic stress tensor for each of the Fouriercomponennts. And then, these forces of the Fourier components are evaluated by the Parseval's theorem.

• Proceedings of the Optical Society of Korea Conference
• /
• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
• /
• pp.178-179
• /
• 2002

We generate optical millimeter-waves by double-sideband suppressed carrier (DSB-SC) modulation using a Mach-Zehnder (MZ) modulator biased at the minimum power. The DSB-SC modulation allows the high-frequency intensity modulation for millimeter-wave generation at the twice of the MZ modulator driving frequency.

• Journal of the Korean Institute of Telematics and Electronics
• /
• 제27권2호
• /
• pp.81-92
• /
• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.