Design Optimization of GaAs Wafer Bonding Module

GaAs 웨이퍼 본딩모듈의 최적화 설계

Recently. use of compound semiconductor is widely increasing in the area of LED and RF device. In this study, wafer bonding module is designed and optimized to bond 6 inches device wafer and carrier wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Load spreader and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analyses show the designed mechanisms are very effective in performance improvement.